Abstract: A method for performing data access control of a memory device with aid of a predetermined command and associated apparatus are provided. The method may include: utilizing the memory controller to receive a first single command from a host device through a transmission interface circuit of the memory controller; and in response to the first single command conforming to a predetermined format of the predetermined command, utilizing the memory controller to perform a series of operations according to the first single command, wherein the first single command represents a first duplicate command, for duplicating from a first source logical address to a first destination logical address. The series of operations may include: reading first data at the first source logical address; and writing the first data at the first destination logical address.

Abstract: A method for fabricating semiconductor devices includes forming channel regions over a substrate. The channel regions, in parallel with one another, extend along a first lateral direction. Each channel region includes at least a respective pair of epitaxial structures. The method includes forming a gate structure over the channel regions, wherein the gate structure extends along a second lateral direction. The method includes removing, through a first etching process, a portion of the gate structure that was disposed over a first one of the channel regions. The method includes removing, through a second etching process, a portion of the first channel region. The second etching process includes one silicon etching process and one silicon oxide deposition process. The method includes removing, through a third etching process controlled based on a pulse signal, a portion of the substrate that was disposed below the removed portion of the first channel region.

Abstract: A spatial positioning method is provided. The method includes steps of: dividing an activity space into a plurality of activity regions; selecting a plurality of positions in the activity space or within a distance range of the activity space as a plurality of base station candidate positions; predicting connection states between the plurality of base stations that are disposed respectively at the plurality of station candidate positions and a mobile robot moving to each of the plurality of activity regions; selecting some of the base station candidate positions as a plurality of base station positions according to the connection states; disposing the plurality of base stations respectively at the plurality of base station positions; and wirelessly connecting the mobile robot respectively moving to the plurality of activity regions to some of the plurality of base stations to position the mobile robot.

Abstract: A method of a storage device to be externally coupled to a host device via a specific communication interface includes: providing a flash memory unit comprising at least one flash memory; counting an outstanding command number for at least one submission queue which is used for storing information of unfinished commands; counting a completion command number for at least one completion queue which is used for storing information of finished commands; and, generating and outputting an interrupt event from the storage device to the host device when a comparison result of the counted outstanding command number with the counted completion command number matches a specific condition.

Abstract: A method of managing a garbage collection (GC) operation on a flash memory includes: calculating an overall spare area in a flash memory, which includes a spare area in a plurality of spare blocks in the flash memory and at least two of a spare area in one or more target blocks corresponding to writing of user data based on host write commands, a spare area in one or more destination blocks corresponding to writing of valid data based on the GC operation and a spare area in a source block corresponding to reading of valid data based on the GC operation; determining an adjustment factor according to the overall spare area; and performing the GC operation on the source block according to a GC-to-host base ratio and the adjustment factor.

Abstract: A method of managing a garbage collection (GC) operation on a flash memory includes: setting a GC starting threshold, wherein the GC starting threshold indicates a predetermined spare block number that is higher than a target spare block number of spare blocks maintained by a flash translation layer (FTL) of the flash memory; determining whether to start the GC operation according to a current number of spare blocks in the flash memory and the GC starting threshold; and performing the GC operation on a source block in the flash memory when the current number of spare blocks is lower than or equal to the GC starting threshold.

Abstract: A method of managing a garbage collection (GC) operation includes: comprising: selecting a source block and at least one candidate source block from the flash memory; calculating an overall valid page percentage according to a number of valid pages in the source block and the at least one candidate source block; determining a GC-to-host base ratio according to the overall valid page percentage; and performing the GC operation on the source block according to at least the GC-to-host base ratio.

Abstract: A data storage device includes a memory device and a memory controller. The memory controller configures a first memory block which is a TLC memory blocks as a data buffer, and accordingly configures a plurality of second memory blocks which are SLC memory blocks. The memory controller uses the first memory block to receive data and accordingly store same data in the second memory blocks as backup data. When an amount of available memory space of the first memory block is smaller than or equal to a predetermined amount, the memory controller determines whether any error has occurred in the data stored in the first memory block. When there is any error occurred in the data stored in the first memory block, the memory controller configures a third memory block and move the backup data stored in the second memory block to the third memory block.

Abstract: A method for performing data access control of a memory device with aid of a predetermined command and associated apparatus are provided. The method may include: utilizing the memory controller to receive a first single command from a host device through a transmission interface circuit of the memory controller; and in response to the first single command conforming to a predetermined format of the predetermined command, utilizing the memory controller to perform a series of operations according to the first single command, wherein the first single command represents a first migrate command, for migrating from a first source logical address to a first destination logical address. The series of operations may include: reading first data at the first source logical address; writing the first data at the first destination logical address; and controlling the memory device to make the first data at the first source logical address become invalid data.

Abstract: A method for performing data access control of a memory device with aid of a predetermined command and associated apparatus are provided. The method may include: utilizing the memory controller to receive a first single command from a host device through a transmission interface circuit of the memory controller; and in response to the first single command conforming to a predetermined format of the predetermined command, utilizing the memory controller to perform a series of operations according to the first single command, wherein the first single command represents a first duplicate command, for duplicating from a first source logical address to a first destination logical address. The series of operations may include: reading first data at the first source logical address; and writing the first data at the first destination logical address.

Abstract: A method of performing a garbage collection operation on a source block includes: performing a plurality of partial page clean operations during a series of host write operations. Each partial clean operation includes: performing a validity check process within a partitioned searching range of the source block to obtain valid page information; and performing a page clean process according to the valid page information and a target clean page number to read valid pages indicated by the valid page information.

Abstract: A method of managing a garbage collection (GC) operation on a flash memory includes: setting a GC starting threshold, wherein the GC starting threshold indicates a predetermined spare block number that is higher than a target spare block number of spare blocks maintained by a flash translation layer (FTL) of the flash memory; determining whether to start the GC operation according to a current number of spare blocks in the flash memory and the GC starting threshold; and performing the GC operation on a source block in the flash memory when the current number of spare blocks is lower than or equal to the GC starting threshold.

Abstract: A method of managing a garbage collection (GC) operation on a flash memory includes: setting a GC starting threshold, wherein the GC starting threshold indicates a predetermined spare block number that is higher than a target spare block number of spare blocks maintained by a flash translation layer (FTL) of the flash memory; determining whether to start the GC operation according to a current number of spare blocks in the flash memory and the GC starting threshold; and performing the GC operation on a source block in the flash memory when the current number of spare blocks is lower than or equal to the GC starting threshold.

Abstract: A method of performing a garbage collection operation on a source block includes: performing a plurality of partial page clean operations during a series of host write operations. Each partial clean operation includes: performing a validity check process within a partitioned searching range of the source block to obtain valid page information; and performing a page clean process according to the valid page information and a target clean page number to read valid pages indicated by the valid page information.

Abstract: A method of performing a wear-leveling operation in a flash memory includes: determining a block age for each of a plurality of blocks in the flash memory according to a number of erase operations that have been performed on the flash memory after the block is erased; selecting one or more candidate source blocks from the plurality of blocks by comparing block ages of the plurality of blocks with an age limit; determining a source block from the one or more candidate source blocks according to erase counts or block ages of the one or more candidate source blocks; and performing the wear-leveling operation on the source block.

Abstract: A method of managing a garbage collection (GC) operation includes: comprising: selecting a source block and at least one candidate source block from the flash memory; calculating an overall valid page percentage according to a number of valid pages in the source block and the at least one candidate source block; determining a GC-to-host base ratio according to the overall valid page percentage; and performing the GC operation on the source block according to at least the GC-to-host base ratio.

Abstract: A method of managing a garbage collection (GC) operation on a flash memory includes: calculating an overall spare area in a flash memory, which includes a spare area in a plurality of spare blocks in the flash memory and at least two of a spare area in one or more target blocks corresponding to writing of user data based on host write commands, a spare area in one or more destination blocks corresponding to writing of valid data based on the GC operation and a spare area in a source block corresponding to reading of valid data based on the GC operation; determining an adjustment factor according to the overall spare area; and performing the GC operation on the source block according to a GC-to-host base ratio and the adjustment factor.

Abstract: A method of managing a garbage collection (GC) operation on a flash memory includes: setting a GC starting threshold, wherein the GC starting threshold indicates a predetermined spare block number that is higher than a target spare block number of spare blocks maintained by a flash translation layer (FTL) of the flash memory; determining whether to start the GC operation according to a current number of spare blocks in the flash memory and the GC starting threshold; and performing the GC operation on a source block in the flash memory when the current number of spare blocks is lower than or equal to the GC starting threshold.

Abstract: A data storage device includes a memory device and a memory controller. The memory controller is arranged to configure a plurality of first memory blocks to receive data from a host device. The first memory blocks form at least a first superblock. When an amount of data stored in the first memory blocks reaches a specific value, the memory controller moves the data from the first memory blocks to a plurality of second memory blocks in a predetermined procedure. The second memory blocks form at least a second superblock. The second superblock includes the second memory blocks located in different memory chips. The data stored in two adjacent logical pages in the first superblock is written in two second memory blocks located in different memory chips.

Abstract: A data storage device includes a memory device and a memory controller. The memory controller configures a first memory block which is a TLC memory blocks as a data buffer, and accordingly configures a plurality of second memory blocks which are SLC memory blocks. The memory controller uses the first memory block to receive data and accordingly store same data in the second memory blocks as backup data. When an amount of available memory space of the first memory block is smaller than or equal to a predetermined amount, the memory controller determines whether any error has occurred in the data stored in the first memory block. When there is any error occurred in the data stored in the first memory block, the memory controller configures a third memory block and move the backup data stored in the second memory block to the third memory block.