Patents by Inventor U-Ting Chiu
U-Ting Chiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11996324Abstract: A method of forming a semiconductor device includes: forming a semiconductor feature over a substrate, the semiconductor feature includes a conductive region; forming a dielectric layer over the semiconductor feature; patterning the dielectric layer to form a contact opening exposing a top surface of the conductive region; forming a monolayer over the dielectric layer, the top surface of the conductive region remaining exposed; and depositing a conductive material in the contact opening.Type: GrantFiled: March 5, 2021Date of Patent: May 28, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: U-Ting Chiu, Po-Nan Yeh, Yu-Shih Wang, Chun-Neng Lin, Ming-Hsi Yeh
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Publication number: 20240136183Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.Type: ApplicationFiled: January 2, 2024Publication date: April 25, 2024Inventors: Yu-Shih Wang, Hong-Jie Yang, Chia-Ying Lee, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Ming-Hsi Yeh, Kuo-Bin Huang
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Patent number: 11901180Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.Type: GrantFiled: February 14, 2022Date of Patent: February 13, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yu-Shih Wang, Hong-Jie Yang, Chia-Ying Lee, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Ming-Hsi Yeh, Kuo-Bin Huang
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Publication number: 20230197617Abstract: A connecting structure includes a substrate, a first conductive feature, a second conductive feature, a third conductive feature over the first conductive feature, and a fourth conductive feature over the second conductive feature. The substrate includes a first region and a second region. The first conductive feature is disposed in the first region and has a first width. The second conductive feature is disposed in the second region and has a second width greater than the first width of the first conductive feature. The third conductive feature includes a first anchor portion surrounded by the first conductive feature. The fourth conductive feature includes a second anchor portion surrounded by the second conductive feature. A depth difference ratio between a depth of the first anchor portion and a depth of the second anchor portion is less than approximately 10%.Type: ApplicationFiled: February 15, 2023Publication date: June 22, 2023Inventors: U-TING CHIU, YU-SHIH WANG, CHUN-CHENG CHOU, YU-FANG HUANG, CHUN-NENG LIN, MING-HSI YEH
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Patent number: 11587875Abstract: A connecting structure includes a substrate, a first conductive feature, a second conductive feature, a third conductive feature over the first conductive feature and a fourth conductive feature over the second conductive feature. The substrate includes a first region and a second region. The first conductive feature is disposed in the first region and has a first width. The second conductive feature is disposed in the second region and has a second width greater than the first width of the first conductive feature. The third conductive feature includes a first anchor portion surrounded by the first conductive feature. The fourth conductive feature includes a second anchor portion surrounded by the second conductive feature. A depth difference ratio between a depth of the first anchor portion and a depth of the second anchor portion is less than approximately 10%.Type: GrantFiled: August 11, 2020Date of Patent: February 21, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: U-Ting Chiu, Yu-Shih Wang, Chun-Cheng Chou, Yu-Fang Huang, Chun-Neng Lin, Ming-Hsi Yeh
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Publication number: 20230041753Abstract: Semiconductor devices and methods of manufacture are described herein. A method includes forming an opening through an interlayer dielectric (ILD) layer to expose a contact etch stop layer (CESL) disposed over a conductive feature in a metallization layer. The opening is formed using photo sensitive materials, lithographic techniques, and a dry etch process that stops on the CESL. Once the CESL is exposed, a CESL breakthrough process is performed to extend the opening through the CESL and expose the conductive feature. The CESL breakthrough process is a flexible process with a high selectivity of the CESL to ILD layer. Once the CESL breakthrough process has been performed, a conductive fill material may be deposited to fill or overfill the opening and is then planarized with the ILD layer to form a contact plug over the conductive feature in an intermediate step of forming a semiconductor device.Type: ApplicationFiled: October 19, 2022Publication date: February 9, 2023Inventors: Yu-Shih Wang, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Chia-Cheng Chen, Liang-Yin Chen, Ming-Hsi Yeh, Kuo-Bin Huang
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Publication number: 20220392803Abstract: A method of forming a semiconductor device includes: forming a semiconductor feature over a substrate, the semiconductor feature includes a conductive region; forming a dielectric layer over the semiconductor feature; patterning the dielectric layer to form a contact opening exposing a top surface of the conductive region; forming a monolayer over the dielectric layer, the top surface of the conductive region remaining exposed; and depositing a conductive material in the contact opening.Type: ApplicationFiled: August 9, 2022Publication date: December 8, 2022Inventors: U-Ting Chiu, Po-Nan Yeh, Yu-Shih Wang, Chun-Neng Lin, Ming-Hsi Yeh
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Publication number: 20220375868Abstract: A semiconductor device includes a gate electrode, a source/drain structure, a lower contact contacting either of the gate electrode or the source/drain structure, and an upper contact disposed in an opening formed in an interlayer dielectric (ILD) layer and in direct contact with the lower contact. The upper contact is in direct contact with the ILD layer without an interposing conductive barrier layer, and the upper contact includes ruthenium.Type: ApplicationFiled: July 27, 2022Publication date: November 24, 2022Inventors: Cheng-Wei CHANG, Chia-Hung CHU, Kao-Feng LIN, Hsu-Kai CHANG, Shuen-Shin LIANG, Sung-Li WANG, Yi-Ying LIU, Po-Nan YEH, Yu Shih WANG, U-Ting CHIU, Chun-Neng LIN, Ming-Hsi YEH
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Publication number: 20220367254Abstract: Semiconductor devices and methods of manufacture are described herein. A method includes forming an opening through an interlayer dielectric (ILD) layer to expose a contact etch stop layer (CESL) disposed over a conductive feature in a metallization layer. The opening is formed using photo sensitive materials, lithographic techniques, and a dry etch process that stops on the CESL. Once the CESL is exposed, a CESL breakthrough process is performed to extend the opening through the CESL and expose the conductive feature. The CESL breakthrough process is a flexible process with a high selectivity of the CESL to ILD layer. Once the CESL breakthrough process has been performed, a conductive fill material may be deposited to fill or overfill the opening and is then planarized with the ILD layer to form a contact plug over the conductive feature in an intermediate step of forming a semiconductor device.Type: ApplicationFiled: July 22, 2022Publication date: November 17, 2022Inventors: Yu-Shih Wang, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Chia-Cheng Chen, Liang-Yin Chen, Ming-Hsi Yeh, Kuo-Bin Huang
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Patent number: 11488857Abstract: Semiconductor devices and methods of manufacture are described herein. A method includes forming an opening through an interlayer dielectric (ILD) layer to expose a contact etch stop layer (CESL) disposed over a conductive feature in a metallization layer. The opening is formed using photo sensitive materials, lithographic techniques, and a dry etch process that stops on the CESL. Once the CESL is exposed, a CESL breakthrough process is performed to extend the opening through the CESL and expose the conductive feature. The CESL breakthrough process is a flexible process with a high selectivity of the CESL to ILD layer. Once the CESL breakthrough process has been performed, a conductive fill material may be deposited to fill or overfill the opening and is then planarized with the ILD layer to form a contact plug over the conductive feature in an intermediate step of forming a semiconductor device.Type: GrantFiled: June 19, 2020Date of Patent: November 1, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yu-Shih Wang, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Chia-Cheng Chen, Liang-Yin Chen, Ming-Hsi Yeh, Kuo-Bin Huang
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Publication number: 20220336615Abstract: In some implementations, fluorine is oxidized after dry etching an oxide layer above a source/drain contact and before cleaning. Accordingly, less hydrofluoric acid is formed during cleaning, which reduces unexpected wet etching of the source/drain contact. This allows for forming a recess in the source/drain contact with a depth to width ratio in a range from approximately 1.0 to approximately 1.4 and prevents damage to a layer of silicide below the source/drain that can be caused by excessive hydrofluoric acid. Additionally, or alternatively, the recess is formed using multiple wet etch processes, and any residual fluorine is oxidized between the wet etch processes. Accordingly, each wet etching process may be shorter and less corrosive, which allows for greater control over dimensions of the recess. Additionally, less hydrofluoric acid may be formed during cleaning processes between the wet etch processes, which reduces the etching of the source/drain contact between processes.Type: ApplicationFiled: August 27, 2021Publication date: October 20, 2022Inventors: U-Ting CHIU, Chun-Cheng CHOU, Chi-Shin WANG, Chun-Neng LIN, Ming-Hsi YEH
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Publication number: 20220285209Abstract: A method of forming a semiconductor device includes: forming a semiconductor feature over a substrate, the semiconductor feature includes a conductive region; forming a dielectric layer over the semiconductor feature; patterning the dielectric layer to form a contact opening exposing a top surface of the conductive region; forming a monolayer over the dielectric layer, the top surface of the conductive region remaining exposed; and depositing a conductive material in the contact opening.Type: ApplicationFiled: March 5, 2021Publication date: September 8, 2022Inventors: U-Ting Chiu, Po-Nan Yeh, Yu-Shih Wang, Chun-Neng Lin, Ming-Hsi Yeh
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Patent number: 11424185Abstract: A semiconductor device includes a gate electrode, a source/drain structure, a lower contact contacting either of the gate electrode or the source/drain structure, and an upper contact disposed in an opening formed in an interlayer dielectric (ILD) layer and in direct contact with the lower contact. The upper contact is in direct contact with the ILD layer without an interposing conductive barrier layer, and the upper contact includes ruthenium.Type: GrantFiled: July 31, 2020Date of Patent: August 23, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cheng-Wei Chang, Chia-Hung Chu, Kao-Feng Lin, Hsu-Kai Chang, Shuen-Shin Liang, Sung-Li Wang, Yi-Ying Liu, Po-Nan Yeh, Yu Shih Wang, U-Ting Chiu, Chun-Neng Lin, Ming-Hsi Yeh
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Publication number: 20220172945Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.Type: ApplicationFiled: February 14, 2022Publication date: June 2, 2022Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Shih Wang, Hong-Jie Yang, Chia-Ying Lee, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Ming-Hsi Yeh, Kuo-Bin Huang
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Patent number: 11276571Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.Type: GrantFiled: June 22, 2020Date of Patent: March 15, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu Shih Wang, Hong-Jie Yang, Chia-Ying Lee, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Ming-Hsi Yeh, Kuo-Bin Huang
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Publication number: 20220051982Abstract: A connecting structure includes a substrate, a first conductive feature, a second conductive feature, a third conductive feature over the first conductive feature and a fourth conductive feature over the second conductive feature. The substrate includes a first region and a second region. The first conductive feature is disposed in the first region and has a first width. The second conductive feature is disposed in the second region and has a second width greater than the first width of the first conductive feature. The third conductive feature includes a first anchor portion surrounded by the first conductive feature. The fourth conductive feature includes a second anchor portion surrounded by the second conductive feature. A depth difference ratio between a depth of the first anchor portion and a depth of the second anchor portion is less than approximately 10%.Type: ApplicationFiled: August 11, 2020Publication date: February 17, 2022Inventors: U-TING CHIU, YU-SHIH WANG, CHUN-CHENG CHOU, YU-FANG HUANG, CHUN-NENG LIN, MING-HSI YEH
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Publication number: 20210202399Abstract: A semiconductor device includes a gate electrode, a source/drain structure, a lower contact contacting either of the gate electrode or the source/drain structure, and an upper contact disposed in an opening formed in an interlayer dielectric (ILD) layer and in direct contact with the lower contact. The upper contact is in direct contact with the ILD layer without an interposing conductive barrier layer, and the upper contact includes ruthenium.Type: ApplicationFiled: July 31, 2020Publication date: July 1, 2021Inventors: Cheng-Wei CHANG, Chia-Hung CHU, Kao-Feng LIN, Hsu-Kai CHANG, Shuen-Shin LIANG, Sung-Li WANG, Yi-Ying LIU, Po-Nan YEH, Yu Shih WANG, U-Ting CHIU, Chun-Neng LIN, Ming-Hsi YEH
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Publication number: 20210202238Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.Type: ApplicationFiled: June 22, 2020Publication date: July 1, 2021Inventors: Yu Shih Wang, Hong-Jie Yang, Chia-Ying Lee, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Ming-Hsi Yeh, Kuo-Bin Huang
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Publication number: 20210134660Abstract: Semiconductor devices and methods of manufacture are described herein. A method includes forming an opening through an interlayer dielectric (ILD) layer to expose a contact etch stop layer (CESL) disposed over a conductive feature in a metallization layer. The opening is formed using photo sensitive materials, lithographic techniques, and a dry etch process that stops on the CESL. Once the CESL is exposed, a CESL breakthrough process is performed to extend the opening through the CESL and expose the conductive feature. The CESL breakthrough process is a flexible process with a high selectivity of the CESL to ILD layer. Once the CESL breakthrough process has been performed, a conductive fill material may be deposited to fill or overfill the opening and is then planarized with the ILD layer to form a contact plug over the conductive feature in an intermediate step of forming a semiconductor device.Type: ApplicationFiled: June 19, 2020Publication date: May 6, 2021Applicants: Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu Shih Wang, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Chia-Cheng Chen, Liang-Yin Chen, Ming-Hsi Yeh, Kuo-Bin Huang