Abstract: A process for manufacturing an integrated device comprises the steps of: forming, in a first wafer of semiconductor material, integrated structures including semiconductor regions and isolation regions; forming, on a second wafer of semiconductor material, interconnection structures of a metal material including plug elements having at least one bonding region of a metal material capable of reacting with the semiconductor regions of the first wafer; and bonding the first and second wafers together by causing the bonding regions of the plug elements to react directly with the semiconductor regions so as to form a metal silicide. Thereby, the metallurgical operations for forming the interconnection structures are completely independent of the operations required for processing silicon, so that there is no interference whatsoever between the two sets of operations.

Abstract: The method comprises the steps of: forming an integrated device including a microactuator in a semiconductor material wafer; forming an immobilization structure of organic material on the wafer; simultaneously forming a securing flange integral with the microactuator and electrical connections for connecting the integrated device to a read/write head; bonding a transducer supporting the read/write head to the securing flange; connecting the electrical connections to the read/write head; cutting the wafer into dices; bonding the microactuator to a suspension; and removing the immobilization structure.

Abstract: The integrated semiconductor device includes a first chip of semiconductor material having first, high-voltage, regions at a first high-value voltage; a second chip of semiconductor material having second high-voltage regions connected to the first voltage; and a third chip of semiconductor material arranged between the first chip and the second chip and having at least one low-voltage region at a second, low-value, voltage. A through connection region is formed in the third chip and is connected to the first and second high-voltage regions; through insulating regions surround the through connection region and insulate it from the low-voltage region.

Abstract: A process for connecting two bodies forming parts of an electromechanical, fluid and optical microsystem, wherein a welding region is formed on a first body; an electrically conductive region and a spacing region are formed on a second body; the spacing region extends near the electrically conductive region and has a second height smaller than said first height. One of the first and second bodies is turned upside down on the other, and the two bodies are welded together by causing the electrically conductive region to melt so that it adheres to the welding region and collapses until its height becomes equal to that of the spacing region. Thereby it is possible to seal active parts or micromechanical structures with respect to the outside world, self-align the two bodies during bonding, obtain an electrical connection between the two bodies, and optically align two optical structures formed on the two bodies.

Abstract: A method for the electrical and/or mechanical interconnection of components of a microelectronic system includes at least one first component and at least one second component to be connected, and at least one local Joule-effect micro-heater is incorporated in one of the first and second components at a respective soldering point therebetween. The method includes supplying electrical energy to the micro-heater to utilize the heat produced therefrom by the Joule effect to solder the first and second components at the respective soldering point.

Abstract: A process for assembling a microactuator on a R/W transducer that includes forming a first wafer of semiconductor material having a plurality of microactuators including suspended regions and fixed regions separated from each other by first trenches; forming a second wafer of semiconductor material comprising blocking regions connecting mobile and fixed intermediate regions separated from each other by second trenches; bonding the two wafers so as to form a composite wafer wherein the suspended regions of the first wafer are connected to the mobile intermediate regions of the second wafer, and the fixed regions of the first wafer are connected to the fixed intermediate regions of the second wafer; cutting the composite wafer into a plurality of units; fixing the mobile intermediate region of each unit to a respective R/W transducer; and removing the blocking regions. The blocking regions are made of silicon oxide, and the intermediate regions are made of polycrystalline silicon.

Abstract: A microelectromechanical structure, usable in an optical switch for directing a light beam towards one of two light guide elements, including: a mirror element, rotatably movable; an actuator, which can translate; and a motion conversion assembly, arranged between the mirror element and the actuator. The motion conversion assembly includes a projection integral with the mirror element and elastic engagement elements integral with the actuator and elastically loaded towards the projection. The elastic engagement elements are formed by metal plates fixed to the actuator at one of their ends and engaging the projection with an abutting edge countershaped with respect to the projection.

Abstract: To reduce the risk of breakage of the moving parts of an integrated microstructure during manufacture steps causing mechanical stresses to the moving parts, a temporary immobilization and support structure is formed, whereby a moving region of the microstructure is temporarily integral with the fixed region. The temporary structure is removed at the end of the assembly operations by non-mechanical removal methods. According to one solution, the temporary structure is formed by a fusible element removed by melting or evaporation, by applying a sufficient quantity of energy thereto. Alternatively, a structural region of polymer material is formed in the trench separating the moving part from the fixed part, or an adhesive material layer sensitive to ultraviolet radiation is applied.

Abstract: A monolithically integrated device. The monolithically integrated device provides advantages over conventional systems in reducing dissipation of hydrogen and its isotopes from sources of same to potentially increase absorption of hydrogen and its isotopes by absorbing materials. In some embodiments, the monolithically integrated device includes a first structure of a first material in solid form configured to absorb hydrogen. Further included is a second structure of a second material in solid form configured to release hydrogen when it reaches a temperature higher than a prefixed temperature. Both the first and second structures are superposed to a substrate and are in contact, at least partly, with one another. Additionally, a third structure of a third material in solid form is included to generate thermal energy when it is submitted to the passage of electric current and is so placed as to be thermally coupled at least to said second structure.

Abstract: A method of manufacturing an SOI (silicon on insulator) wafer includes the step of selective anisotropic etching to form, in the substrate, trenches which extend to a predetermined depth from a major surface of the substrate and between which pillar portions of the substrate are defined. The method further includes the step of selective isotropic etching to enlarge the trenches, starting at a predetermined distance from the major surface, thus reducing the thicknesses of the pillar portions of the substrate between adjacent trenches. Also, the method includes the steps of selective oxidation to convert the pillar portions of reduced thickness of the substrate into silicon dioxide and to fill the trenches with silicon dioxide, starting substantially from the predetermined distance, and epitaxial growth of a silicon layer on the major surface of the substrate.

Abstract: The electronic device is formed in a die including a body of semiconductor material having a first face covered by a covering structure and a second face. An integral thermal spreader of metal is grown galvanically on the second face during the manufacture of a wafer, prior to cutting into dice. The covering structure comprises a passivation region and a protective region of opaque polyimide; the protective region and the passivation region are opened above the contact pads for the passage of leads.

Abstract: The microreactor is completely integrated and is formed by a semiconductor body having a surface and housing at least one buried channel accessible from the surface of the semiconductor body through two trenches. A heating element extends above the surface over the channel and a resist region extends above the heating element and defines an inlet reservoir and an outlet reservoir. The reservoirs are connected to the trenches and have, in cross-section, a larger area than the trenches. The outlet reservoir has a larger area than the inlet reservoir. A sensing electrode extends above the surface and inside the outlet reservoir.

Abstract: To manufacture integrated semiconductor devices comprising chemoresistive gas microsensors, a semiconductor material body is first formed, on the semiconductor material body are successively formed, reciprocally superimposed, a sacrificial region of metallic material, formed at the same time and on the same level as metallic connection regions for the sensor, a heater element, electrically and physically separated from the sacrificial region and a gas sensitive element, electrically and physically separated from the heater element; openings are formed laterally with respect to the heater element and to the gas sensitive element, which extend as far as the sacrificial region and through which the sacrificial region is removed at the end of the manufacturing process.

Abstract: An electric connection structure connecting a first silicon body to conductive regions provided on the surface of a second silicon body arranged on the first body. The electric connection structure includes at least one plug region of silicon, which extends through the second body; at least one insulation region laterally surrounding the plug region; and at least one conductive electromechanical connection region arranged between the first body and the second body, and in electrical contact with the plug region and with conductive regions of the first body. To form the plug region, trenches are dug in a first wafer and are filled, at least partially, with insulating material. The plug region is fixed to a metal region provided on a second wafer, by performing a low-temperature heat treatment which causes a chemical reaction between the metal and the silicon. The first wafer is thinned until the trenches and electrical connections are formed on the free face of the first wafer.

Abstract: An apparatus for the generation of thermal energy includes: a) a first quantity in solid form of a first material suitable to absorb hydrogen with ensuing generation of thermal energy; b) a second quantity in solid form of a second material suitable to release hydrogen at a temperature higher than a prefixed temperature, at least partly in contact with said first quantity; and c) a third quantity in solid form of a third material, suitable for the generation of thermal energy when it is submitted to the passage of electric current, so located as to be thermally coupled with said second quantity.

Abstract: The integrated device for microfluid thermoregulation comprises a semiconductor material body having a surface; a plurality of buried channels extending in the semiconductor material body at a distance from the surface of the semiconductor material body; inlet and outlet ports extending from the surface of the semiconductor material body as far as the ends of the buried channels and being in fluid connection with the buried channels; and heating elements on the semiconductor material body. Temperature sensors are arranged between the heating elements above the surface of the semiconductor material body.

Abstract: An integrated semiconductor device comprises, reciprocally superimposed, a thermally insulating region; a thermal conduction region of a high thermal conductivity material; a passivation oxide layer; and a gas sensitive element. The thermal conduction region defines a preferential path towards the gas sensitive element for the heat generated by the heater element, thereby the heat dispersed towards the substrate is negligible during the operation of the device.

Abstract: A wafer of semiconductor material for fabricating integrated devices, including a stack of superimposed layers including first and second monocrystalline silicon layers separated by an intermediate insulating layer made of a material selected from the group comprising silicon carbide, silicon nitride and ceramic materials. An oxide bond layer is provided between the intermediate layer and the second silicon layer. The wafer is fabricated by forming the intermediate insulating layer on the first silicon layer in a heated vacuum chamber; depositing the oxide layer; and superimposing the second silicon layer. When the stack of silicon, insulating material, oxide and silicon layers is heat treated, the oxide reacts so as to bond the insulating layer to the second silicon layer. As a ceramic material beryllium oxide, aluminium nitride, boron nitride and alumina may be used.

Abstract: The process comprises the steps of: forming a through hole from the back of a semiconductor material body; forming a hole insulating layer of electrically isolating material laterally covering the walls of the through hole; forming a through contact region of conductive material laterally covering the hole insulating layer inside the hole and having at least one portion extending on top of the lower surface of the body; forming a protective layer covering the through contact region; and forming a connection structure extending on top of the upper surface of the body between and in electrical contact with the through contact region and the electronic component.

Abstract: An integrated semiconductor device comprises, reciprocally superimposed, a thermally insulating region; a thermal conduction region of a high thermal conductivity material; a passivation oxide layer; and a gas sensitive element. The thermal conduction region defines a preferential path towards the gas sensitive element for the heat generated by the heater element, thereby the heat dispersed towards the substrate is negligible during the operation of the device.