Patents by Inventor Udo Nothelfer
Udo Nothelfer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180224585Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.Type: ApplicationFiled: February 12, 2018Publication date: August 9, 2018Inventors: Johann Trenkler, Hans-Juergen Mann, Udo Nothelfer
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Patent number: 9910193Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.Type: GrantFiled: October 31, 2014Date of Patent: March 6, 2018Assignee: Carl Zeiss SMT GmbHInventors: Johann Trenkler, Hans-Juergen Mann, Udo Nothelfer
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Publication number: 20150055111Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.Type: ApplicationFiled: October 31, 2014Publication date: February 26, 2015Inventors: Johann Trenkler, Hans-Juergen Mann, Udo Nothelfer
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Patent number: 8891163Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.Type: GrantFiled: July 11, 2013Date of Patent: November 18, 2014Assignee: Carl Zeiss SMT GmbHInventors: Johann Trenkler, Hans-Juergen Mann, Udo Nothelfer
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Publication number: 20130301023Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.Type: ApplicationFiled: July 11, 2013Publication date: November 14, 2013Inventors: Johann Trenkler, Hans-Juergen Mann, Udo Nothelfer
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Patent number: 8537460Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.Type: GrantFiled: June 22, 2012Date of Patent: September 17, 2013Assignee: Carl Zeiss SMT GmbHInventors: Johann Trenkler, Hans-Jürgen Mann, Udo Nothelfer
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Publication number: 20120293779Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.Type: ApplicationFiled: June 22, 2012Publication date: November 22, 2012Inventors: Johann Trenkler, Hans-Juergen Mann, Udo Nothelfer
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Patent number: 8243364Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.Type: GrantFiled: May 27, 2011Date of Patent: August 14, 2012Assignee: CARL ZEISS SMT GmbHInventors: Johann Trenkler, Hans-Juergen Mann, Udo Nothelfer
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Publication number: 20110228237Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.Type: ApplicationFiled: May 27, 2011Publication date: September 22, 2011Applicant: CARL ZEISS SMT GMBHInventors: Johann TRENKLER, Hans-Juergen MANN, Udo NOTHELFER
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Patent number: 7952797Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system consisting of at least one layer. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.Type: GrantFiled: March 6, 2009Date of Patent: May 31, 2011Assignee: CARL ZEISS SMT GmbHInventors: Johann Trenkler, Hans-Jürgen Mann, Udo Nothelfer
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Publication number: 20090251772Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. According to the invention, the reflective optical element has a protective layer system consisting of at least one layer. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.Type: ApplicationFiled: March 6, 2009Publication date: October 8, 2009Inventors: Johann TRENKLER, Hans-Jurgen Mann, Udo Nothelfer
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Publication number: 20070178690Abstract: By using a patterned sacrificial layer for forming highly conductive metal regions, the formation of a reliable conductive barrier layer may be accomplished prior to the actual deposition of a low-k dielectric material. Hence, even highly porous dielectrics may be used in combination with highly conductive metals, substantially without compromising the diffusion characteristics and the electromigration performance. Hence, metallization layers for highly scaled semiconductor devices having critical dimensions of 50 nm and significantly less may be provided.Type: ApplicationFiled: October 4, 2006Publication date: August 2, 2007Inventors: Markus Nopper, Udo Nothelfer, Axel Preusse
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Publication number: 20060066940Abstract: The invention relates to a reflective optical element and an EUV lithography appliance containing one such element, said appliance displaying a low propensity to contamination. According to the invention, the reflective optical element has a protective layer system consisting of at least one layer. The optical characteristics of the protective layer system are between those of a spacer and an absorber or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.Type: ApplicationFiled: August 31, 2005Publication date: March 30, 2006Inventors: Johann Trenkler, Hans-Jurgen Mann, Udo Nothelfer
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Publication number: 20040250572Abstract: A method for producing a quartz glass material with high resistance to radiation-induced density modifications when exposed to ultraviolet radiation at about 193 nm and energy densities of the order of the working energy densities of optical systems for microlithography, in which the peroxy defect level in the quartz glass material is minimized. In this way the creation of closely neighbored hydroxyl groups can be inhibited, which have been identified as an essential cause for radiation induced density reduction of the quartz glass material.Type: ApplicationFiled: February 23, 2004Publication date: December 16, 2004Applicant: Carl Zeiss SMT AGInventors: Ralf Lindner, Frank Stietz, Udo Nothelfer, Eric Eva
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Patent number: 5905203Abstract: A micromechanical acceleration sensor consists of a first semiconductor wafer and a second semiconductor wafer, where on the first semiconductor wafer first and second electrodes, are provided to create a variable capacitance and the second semiconductor wafer has a movable third electrode, and where on the first semiconductor wafer there is a microelectronic evaluation unit. The moveable electrode is a rocker suspended asymmetrically with regard to an axis of rotation such that each respective portion is of a different length and is opposite one of the first and second electrodes. A closed ring structure is disposed on the surface of the first semiconductor wafer.Type: GrantFiled: September 30, 1996Date of Patent: May 18, 1999Assignee: Temic Telefunken microelectronic GmbHInventors: Georg Flach, Udo Nothelfer, Gunther Schuster, Heribert Weber
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Patent number: 5623099Abstract: This invention concerns a capacitive acceleration sensor complete with planar build-up, in particular for use as a component part of a vehicle occupant protection system within a motor vehicle. A self-supporting structure will be movably located within a hollow space between two semiconductor elements which are electrically insulated from each other but mechanically bonded, where an acceleration force acting on the inert mass of the self-supporting structure will cause a change in the distance between this self-supporting structure and the semiconductor element. This produces a change in capacity which can be evaluated by means of suitable circuitry.Type: GrantFiled: August 21, 1995Date of Patent: April 22, 1997Assignee: Temic Telefunken microelectronic GmbHInventors: Gunther Schuster, Udo Nothelfer