Abstract: A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 ?m. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10.

Abstract: A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 ?m. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10.

Abstract: A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 ?m. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10.

Abstract: A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 ?m. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10.

Abstract: A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 ?m. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10.

Abstract: A method of manufacturing a high Mn non-magnetic steel sheet having low permeability at a cryogenic temperature suitable for use in large scale particle accelerators, the method comprises rolling a steel material containing, on the wt % basis, from 0.05 to 0.18% of C, from 26.0 to 30.0% of Mn, from 5.0 to 10.0% of Cr, 0.05 to 0.15% of N and, optionally, from 0.50 to 5.0% of Ni, in which a rolling start temperature is from 1050 to 1200° C. and a rolling end temperature is from 700 to 1000° C. Further, a cold rolled sheet is annealed at an annealing temperature for cold rolled sheet of from 1050 to 1200° C. and cooled after annealing, the annealed sheet being preferably applied with temper rolling under control for the strength by varying a draft ratio.

Abstract: A method of manufacturing a high Mn non-magnetic steel sheet having low permeability at a cryogenic temperature suitable for use in large scale particle accelerators, the method comprises rolling a steel material containing, on the wt % basis, from 0.05 to 0.18% of C, from 26.0 to 30.0% of Mn, from 5.0 to 10.0% of Cr, 0.05 to 0.15% of N and, optionally, from 0.50 to 5.0% of Ni, in which a rolling start temperature is from 1050 to 1200° C. and a rolling end temperature is from 700 to 1000° C. Further, a cold rolled sheet is annealed at an annealing temperature for cold rolled sheet of from 1050 to 1200° C. and cooled after annealing, the annealed sheet being preferably applied with temper rolling under control for the strength by varying a draft ratio.

Abstract: Thin cast sheets having an excellent quality are obtained by continuous casting in which a semi-solidified metal slurry is fed from a continuous production device of the semi-solidified metal slurry through a discharge nozzle provided with means for heating the nozzle itself into a twin roll type continuous strip caster, at where the slurry is rapidly quenched and solidified to fine a structure and dispersion of precipitate.

Abstract: A method for producing a grain-oriented silicon steel sheet in the coil shape having high magnetic induction and including AlN and MnSe as principal inhibitors is disclosed. In a series of processes for producing a grain-oriented silicon steel sheet, the oxide content on the steel sheet surface is controlled within a range of about 0.02 to 0.10 g/m.sup.2 before the temperature elevation phase of a decarburization annealing process, and the ratio of the steam partial pressure to the hydrogen partial pressure is controlled within a range of about 0.2 to 0.65 at a steel sheet surface temperature ranging from about 500.degree. to 750.degree. C. during the temperature elevation phase in a decarburization annealing process. The method promotes stable secondary recrystallized grain formation even in different coils or at different places in the same coil, such that fluctuation of magnetic properties is depressed.

Abstract: A method of producing a grain oriented silicon steel sheet is adapted to lower the iron loss. A silicon steel slab, containing about 2.0 to 4.0 weight % of Si and an inhibitor-forming amount of S, or Se, or both, is hot rolled. After the hot rolled steel sheet is annealed when necessary, the steel sheet is cold rolled into a cold rolled steel sheet having a final thickness by performing cold rolling either one time or a plurality of times with intermediate annealing therebetween, the cold rolled steel sheet then being subjected to decarburization, coating of the surface of the steel sheet with an annealing separation agent mainly comprising MgO, secondary recrystallization annealing, and purification annealing. In the cold rolling step, an oxide layer exists on the surface of the steel sheet. Specifically, in the cold rolling step, rolling oil is supplied only at the entrance of the rolling mill used, and an oxide layer having a thickness of about 0.05 to 5 .mu.m is generated.

Abstract: Method of manufacturing a grain oriented silicon steel sheet. An annealing separating agent mainly composed of MgO is coated on a surface of a decarburized silicon steel sheet. The silicon steel sheet is subjected to secondary recrystallization annealing and then purification annealing. The annealing separating agent contains Ti oxide or a Ti compound which can be oxidized by heating. The purification annealing is conducted in steps. A non-oxidizing atmosphere having a high nitrogen concentration is present in one step. A hydrogen atmosphere having a low nitrogen concentration is present in a subsequent step.

Abstract: A grain-oriented silicon steel sheet having a low iron loss free from deterioration due to the stress-relief annealing, can be obtained by forming on its surface a forsterite film locally having regions, which have a thickness different from that of the remaining regions in the film, or locally having filmless regions which do not coat the steel sheet surface.

Abstract: A grain oriented electromagnetic steel sheet having a very low iron loss is obtained by subjecting a surface of base metal in the sheet after finish annealing to a particular mechanical polishing and has a surface roughness having a center-line average roughness of not more than 0.3 .mu.m after the polishing and the number of abrasive grains embedded in a layer just beneath polished surface of not more than 20,000 grains/cm.sup.2.

Abstract: A grain-oriented silicon steel sheet having a low iron loss, due to the subdividing effect of magnetic domain wall spacing, free from deterioration due to the stress-relief annealing, can be obtained by forming on its surface a forsterite film locally having regions, which have a thickness different from that of the remaining regions in the film, or locally having filmless regions which do not coat the steel sheet surface.

Abstract: A grain-oriented silicon steel sheet having a low iron loss free from deterioration due to the stress-relief annealing, can be obtained by forming on its surface a forsterite film locally having regions, which have a thickness different from that of the remaining regions in the film, or locally having filmless regions which do not coat the steel sheet surface.