Patents by Inventor Ukyo Ikeda
Ukyo Ikeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11953461Abstract: An electrode formed by molding a semiconductor device with resin. The electrode comprises: a first resin mold portion formed on a front surface of the semiconductor device and having a first thickness (t1); a second resin mold portion formed on a back surface of the semiconductor device and having a second thickness (t2) greater than the first thickness; and an exposed portion formed in a part of the first resin mold portion corresponding to an end of the semiconductor device.Type: GrantFiled: April 8, 2019Date of Patent: April 9, 2024Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Ukyo Ikeda, Tetsuyoshi Ono, Hiroki Nakatsuchi, Masafumi Miyake
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Patent number: 11397164Abstract: The invention aims to suppress an effect of noise and heat generated from a memory on a measurement result in an ion concentration measuring device that uses an ion detection element for outputting a potential corresponding to the concentration of ions. The ion concentration measuring device according to the invention includes a cartridge having an ion detection element and a memory and supplies power to the memory in a time period excluding a time period for which the potential generated by the ion detection element is acquired.Type: GrantFiled: February 4, 2019Date of Patent: July 26, 2022Assignee: Hitachi High-Tech CorporationInventors: Masafumi Miyake, Tetsuyoshi Ono, Satoshi Ozawa, Ukyo Ikeda
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Publication number: 20210140913Abstract: An electrode formed by molding a semiconductor device with resin. The electrode comprises: a first resin mold portion formed on a front surface of the semiconductor device and having a first thickness (t1); a second resin mold portion formed on a back surface of the semiconductor device and having a second thickness (t2) greater than the first thickness; and an exposed portion formed in a part of the first resin mold portion corresponding to an end of the semiconductor device.Type: ApplicationFiled: April 8, 2019Publication date: May 13, 2021Inventors: Ukyo Ikeda, Tetsuyoshi Ono, Hiroki Nakatsuchi, Masafumi Miyake
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Publication number: 20200300809Abstract: The invention aims to suppress an effect of noise and heat generated from a memory on a measurement result in an ion concentration measuring device that uses an ion detection element for outputting a potential corresponding to the concentration of ions. The ion concentration measuring device according to the invention includes a cartridge having an ion detection element and a memory and supplies power to the memory in a time period excluding a time period for which the potential generated by the ion detection element is acquired.Type: ApplicationFiled: February 4, 2019Publication date: September 24, 2020Inventors: Masafumi MIYAKE, Tetsuyoshi ONO, Satoshi OZAWA, Ukyo IKEDA
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Publication number: 20160354776Abstract: A reaction cell for automatic biochemical analyzer in which weld generation in beam transmission parts is prevented to reduce scattering of transmitted beam, thereby having a stable transmissivity to achieve high analytical efficiency is provided. It is a reaction cell which is bottomed and has an opening formed on one end, the reaction cell comprising a tube wall including one pair of walls facing to each other and two side walls each connecting to each of the one pair of walls via a corner portion, wherein the one pair of walls each have a thickness larger than thicknesses of the corner portions, and have a uniform thickness over the entire wall, or when each wall has a maximum value in thickness in a part of the wall, the thickness monotonically decreases from the part having the maximum value to the corner portion.Type: ApplicationFiled: February 10, 2015Publication date: December 8, 2016Inventors: Ukyo IKEDA, Tsutomu KONO, Norihisa KOMORI, Satoshi YOSHIDA
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Patent number: 8913474Abstract: An optical information recording/reproducing apparatus for recording information on a recording medium and/or reproducing information from the recording medium, includes: a laser light source for performing recording and/or reproducing information; a shielding part, using a liquid crystal, that can switch between transmission and interception of laser light emitted from the laser light source; a driving circuit for driving the switching between transmission and interception of the shielding part; a moving part for relatively moving the shielding part and the laser light; and a controlling circuit for controlling the moving part. The moving part relatively moves the shielding part and the laser light so as to switch a region to which the laser light is applied from a first region of the shielding part to a second region thereof different from the first region, in order to prevent the liquid crystal from deteriorating.Type: GrantFiled: April 2, 2014Date of Patent: December 16, 2014Assignees: Hitachi Consumer Electronics Co., Ltd., Hitachi-LG Data Storage, Inc.Inventors: Hirofumi Taguchi, Kouji Fujita, Taku Hoshizawa, Ukyo Ikeda
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Publication number: 20140301176Abstract: An optical information recording/reproducing apparatus for recording information on a recording medium and/or reproducing information from the recording medium, includes: a laser light source for performing recording and/or reproducing information; a shielding part, using a liquid crystal, that can switch between transmission and interception of laser light emitted from the laser light source; a driving circuit for driving the switching between transmission and interception of the shielding part; a moving part for relatively moving the shielding part and the laser light; and a controlling circuit for controlling the moving part. The moving part relatively moves the shielding part and the laser light so as to switch a region to which the laser light is applied from a first region of the shielding part to a second region thereof different from the first region, in order to prevent the liquid crystal from deteriorating.Type: ApplicationFiled: April 2, 2014Publication date: October 9, 2014Applicants: Hitachi Consumer Electronics Co., Ltd., Hitachi-LG Data Storage, Inc.Inventors: Hirofumi TAGUCHI, Kouji FUJITA, Taku HOSHIZAWA, Ukyo IKEDA
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Patent number: 8796563Abstract: In ultrasonic bonding of a metal terminal to a substrate pad, a thin buffer metal layer which is formed of a soft metal or a highly slidable metal is interposed between a terminal edge and a pad so as to prevent direct contact between an end of the terminal and the pad upon bonding. This makes it possible to prevent abrasion and a crack in the pad at the end of the terminal caused by pressure and an ultrasonic wave upon the ultrasonic bonding. This makes it possible to realize a compact bonded structure with high reliability.Type: GrantFiled: January 29, 2010Date of Patent: August 5, 2014Assignee: Hitachi Automotive Systems, Ltd.Inventors: Ukyo Ikeda, Masato Nakamura, Shiro Yamashita
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Publication number: 20110237001Abstract: A technique for evaluating a semiconductor chip is provided. The semiconductor chip is mounted on a mount substrate, the semiconductor chip laminating on one surface of a silicone substrate, at least any of a metal wiring film 101 serving as a resistance temperature detector made up of multiple regions and a metal wiring film 102 serving as a heater made up of one or more regions, and an electrode 103 for connecting the metal wiring film 101 and the metal wiring film 102 with the mount substrate. Then, the metal wiring film 101 is electrically connected with an ammeter and a voltmeter, and the metal wiring film 102 is electrically connected with a power source, thereby providing an evaluation system which is capable of evaluating temperature measurement, heating, and temperature profile in each of the regions on the semiconductor chip.Type: ApplicationFiled: February 24, 2011Publication date: September 29, 2011Inventors: Takehiko HASEBE, Masako Kato, Yoshihide Yamaguchi, Masashi Nishiki, Naoki Matsushima, Teiichi Inada, Rei Yamamoto, Hiroyuki Temmei, Ukyo Ikeda
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Publication number: 20110058342Abstract: An object of the present invention is to provide a semiconductor device having a small-sized, thin, and high heat-dissipating multilayer frame mounting structure. To achieve the object, the invention provides a semiconductor device having a multilayer frame obtained by stacking a plurality of lead frames on which electronic parts are mounted and sealing the stack with a resin. An interlayer distance between a lead frame on which an electronic part is mounted and a lead frame which is stacked above the lead frame and on which an electronic part is mounted is shorter than a distance from a face of the lead frame to a top face of the electronic part.Type: ApplicationFiled: August 25, 2010Publication date: March 10, 2011Applicant: Hitachi, Ltd.Inventors: Shinya Kawakita, Shiro Yamashita, Ukyo Ikeda, Takuto Yamaguchi
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Publication number: 20100206632Abstract: In ultrasonic bonding of a metal terminal to a substrate pad, a thin buffer metal layer which is formed of a soft metal or a highly slidable metal is interposed between a terminal edge and a pad so as to prevent direct contact between an end of the terminal and the pad upon bonding. This makes it possible to prevent abrasion and a crack in the pad at the end of the terminal caused by pressure and an ultrasonic wave upon the ultrasonic bonding. This makes it possible to realize a compact bonded structure with high reliability.Type: ApplicationFiled: January 29, 2010Publication date: August 19, 2010Applicant: Hitachi Automotive Systems, Ltd.Inventors: Ukyo IKEDA, Masato NAKAMURA, Shiro YAMASHITA
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Patent number: 7498671Abstract: A semiconductor module of the present invention comprises a first conductive layer (film) and a second conductive layer (film) which are separately formed on the main surface of a packed substrate, a thermal diffusion plate connected by solder to the upper surface of the first conductive layer, a semiconductor element connected by solder to the upper surface of the thermal diffusion plate, and a lead having one end connected by solder to the second conductive layer and the other end connected by solder to the semiconductor element, wherein the outer periphery of the connected region where the semiconductor element is connected by solder to the upper surface of the thermal diffusion plate is formed with protrusion parts protruding up from the connecting region and a turning of the semiconductor element in the upper surface of the thermal diffusion plate in the solder connecting process is suppressed by the protrusion parts.Type: GrantFiled: August 7, 2007Date of Patent: March 3, 2009Assignee: Hitachi, Ltd.Inventors: Shinichi Fujiwara, Masahide Harada, Hideto Yoshinari, Shosaku Ishihara, Shiro Yamashita, Isamu Yoshida, Ukyo Ikeda
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Publication number: 20080142571Abstract: Since an electronic device of the present invention has a pair of joint pieces thereof formed (extended) on both sides with respect to one end of the body thereof, the pair of joint pieces both connected to one of the substrates improves the joining strength between the lead frame connector and the one of substrates and ensures the reliability of electrical connection between the lead frame connector and the one of the substrates.Type: ApplicationFiled: December 4, 2007Publication date: June 19, 2008Inventors: Takehide Yokozuka, Ukyo Ikeda, Masahide Harada, Hideto Yoshinari
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Publication number: 20080061431Abstract: A semiconductor module of the present invention comprises a first conductive layer (film) and a second conductive layer (film) which are separately formed on the main surface of a packed substrate, a thermal diffusion plate connected by solder to the upper surface of the first conductive layer, a semiconductor element connected by solder to the upper surface of the thermal diffusion plate, and a lead having one end connected by solder to the second conductive layer and the other end connected by solder to the semiconductor element, wherein the outer periphery of the connected region where the semiconductor element is connected by solder to the upper surface of the thermal diffusion plate is formed with protrusion parts protruding up from the connecting region and a turning of the semiconductor element in the upper surface of the thermal diffusion plate in the solder connecting process is suppressed by the protrusion parts.Type: ApplicationFiled: August 7, 2007Publication date: March 13, 2008Inventors: Shinichi Fujiwara, Masahide Harada, Hideto Yoshinari, Shosaku Ishihara, Shiro Yamashita, Isamu Yoshida, Ukyo Ikeda