Patents by Inventor Ulrich Kelberlau
Ulrich Kelberlau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240136349Abstract: A unidirectional transient voltage suppression (TVS) device. The TVS device may include a first layer, comprising an N+ material, formed on a first part of a first main surface of a substrate and a second layer formed from an N? material. The second layer may extend from a second part of the first main surface, surrounding the first layer, and may extend subjacent to the first layer. The TVS device may include a third layer, comprising a P+ material, wherein the second layer is disposed between the first layer and the third layer. The TVS device may also include an isolation region, extending from the first main surface, and being disposed around the second layer.Type: ApplicationFiled: October 19, 2023Publication date: April 25, 2024Applicant: Littelfuse Semiconductor (Wuxi) Co., Ltd.Inventors: Boris Rosensaft, Jifeng Zhou, Ulrich Kelberlau
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Patent number: 8093652Abstract: A power device includes a semiconductor substrate of first conductivity having an upper surface and a lower surface. An isolation diffusion region of second conductivity is provided at a periphery of the substrate and extends from the upper surface to the lower surface of the substrate. The isolation diffusion region has a first surface corresponding to the upper surface of the substrate and a second surface corresponding to the lower surface. A peripheral junction region of second conductivity is formed at least partly within the isolation diffusion region and formed proximate the first surface of the isolation diffusion region. First and second terminals are provided.Type: GrantFiled: August 27, 2003Date of Patent: January 10, 2012Assignee: IXYS CorporationInventors: Subhas C. Bose Jayappa Veeramma, Ulrich Kelberlau
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Patent number: 7619284Abstract: An over-voltage protection device includes a substrate including an upper surface and a lower surface; a first electrode provided on the upper surface of the substrate; a second electrode provided on the lower surface on the substrate; a first conductive layer overlying the lower surface of the substrate, the first conductive region being a conductive region of a first type; a plurality of first conductive regions provided proximate the upper surface of the substrate, the plurality of first conductive regions being conductive regions of the first type; and a plurality of second conductive region provided proximate the upper surface of the substrate, the plurality of second conductive region being conductive regions of a second type. The plurality of the first conductive regions are provided in an alternating manner with the plurality of second conductive regions. The first electrode is contacting the plurality of the first and second conductive regions.Type: GrantFiled: February 8, 2007Date of Patent: November 17, 2009Assignee: IXYS CorporationInventor: Ulrich Kelberlau
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Patent number: 7442630Abstract: A power device includes a gate electrode, a source electrode, and a drain electrode provided within an active region of a semiconductor substrate of first conductivity type. A vertical diffusion region of second conductivity is provided at a periphery the active region. The vertical diffusion region extends continuously from a top surface of the substrate to a bottom surface of the substrate. The vertical diffusion region includes an upper portion having a first depth and a lower portion having a second depth that is substantially greater than the first depth.Type: GrantFiled: August 30, 2005Date of Patent: October 28, 2008Assignee: IXYS CorporationInventors: Ulrich Kelberlau, Peter Ingram, Nathan Zommer
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Patent number: 7326596Abstract: A method for forming a high voltage semiconductor power device comprises providing a first dopant source of first conductivity on an upper surface of a substrate of second conductivity. A second dopant source of first conductivity is provided on a lower surface of the substrate. The substrate is annealed for a first given time to drive the dopants from the first and second dopants sources into the substrate. The first and second dopant sources are removed from the upper and lower surfaces of the substrate. The substrate is annealed for a second given time to homogenize dopant concentration within the substrate after the first and second dopant sources have been removed, where the annealing the substrate for the second given time results in out-diffusion of dopants proximate the upper and lower surfaces of the substrate.Type: GrantFiled: April 22, 2005Date of Patent: February 5, 2008Assignee: IXYS CorporationInventors: Markus Bickel, Ulrich Kelberlau
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Patent number: 7262467Abstract: An over-voltage protection device includes a substrate including an upper surface and a lower surface; a first electrode provided on the upper surface of the substrate; a second electrode provided on the lower surface on the substrate; a first conductive layer overlying the lower surface of the substrate, the first conductive region being a conductive region of a first type; a plurality of first conductive regions provided proximate the upper surface of the substrate, the plurality of first conductive regions being conductive regions of the first type; and a plurality of second conductive region provided proximate the upper surface of the substrate, the plurality of second conductive region being conductive regions of a second type. The plurality of the first conductive regions are provided in an alternating manner with the plurality of second conductive regions. The first electrode is contacting the plurality of the first and second conductive regions.Type: GrantFiled: August 30, 2004Date of Patent: August 28, 2007Assignee: IXYS CorporationInventor: Ulrich Kelberlau
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Patent number: 7259440Abstract: A fast switching diode includes an n? layer having an upper surface and a lower surface and a first edge and a second edge, the second edge provided on an opposing side of the first edge. A converted region is provided proximate the upper surface of the n? layer. The converted region includes platinum and has a first depth. The converted region has a platinum concentration that is substantially greater than an n-type dopant concentration in the converted region. First and second n+ regions are provided proximate the first and second edges of the n? layer, respectively, and extend from the upper surface of the n? layer to second and third depths, respectively. Each of the second and third depths is greater than the first depth to reduce leakage current. A first electrode is provided proximate the upper surface of the n? layer. A second electrode is provided proximate the lower surface of the n? layer.Type: GrantFiled: March 22, 2005Date of Patent: August 21, 2007Assignee: IXYS CorporationInventor: Ulrich Kelberlau
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Publication number: 20070126024Abstract: An over-voltage protection device includes a substrate including an upper surface and a lower surface; a first electrode provided on the upper surface of the substrate; a second electrode provided on the lower surface on the substrate; a first conductive layer overlying the lower surface of the substrate, the first conductive region being a conductive region of a first type; a plurality of first conductive regions provided proximate the upper surface of the substrate, the plurality of first conductive regions being conductive regions of the first type; and a plurality of second conductive region provided proximate the upper surface of the substrate, the plurality of second conductive region being conductive regions of a second type. The plurality of the first conductive regions are provided in an alternating manner with the plurality of second conductive regions. The first electrode is contacting the plurality of the first and second conductive regions.Type: ApplicationFiled: February 8, 2007Publication date: June 7, 2007Applicant: IXYS CorporationInventor: Ulrich KELBERLAU
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Patent number: 7071537Abstract: A power device includes a substrate assembly including an upper surface and a lower surface. The substrate assembly includes a first layer and a second layer. The first layer overlies the second layer and has different conductivity than the second layer. A first electrode is provided proximate the upper surface. A second electrode is provided proximate the upper surface and is spaced apart from the first electrode. The second layer is configured to provide a current path between the first and second electrodes.Type: GrantFiled: May 5, 2003Date of Patent: July 4, 2006Assignee: IXYS CorporationInventors: Ulrich Kelberlau, Nathan Zommer
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Publication number: 20060063313Abstract: A power device includes a gate electrode, a source electrode, and a drain electrode provided within an active region of a semiconductor substrate of first conductivity type. A vertical diffusion region of second conductivity is provided at a periphery the active region. The vertical diffusion region extends continuously from a top surface of the substrate to a bottom surface of the substrate. The vertical diffusion region includes an upper portion having a first depth and a lower portion having a second depth that is substantially greater than the first depth.Type: ApplicationFiled: August 30, 2005Publication date: March 23, 2006Applicant: IXYS CorporationInventors: Ulrich Kelberlau, Peter Ingram, Nathan Zommer
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Publication number: 20050239259Abstract: A method for forming a high voltage semiconductor power device comprises providing a first dopant source of first conductivity on an upper surface of a substrate of second conductivity. A second dopant source of first conductivity is provided on a lower surface of the substrate. The substrate is annealed for a first given time to drive the dopants from the first and second dopants sources into the substrate. The first and second dopant sources are removed from the upper and lower surfaces of the substrate. The substrate is annealed for a second given time to homogenize dopant concentration within the substrate after the first and second dopant sources have been removed, where the annealing the substrate for the second given time results in out-diffusion of dopants proximate the upper and lower surfaces of the substrate.Type: ApplicationFiled: April 22, 2005Publication date: October 27, 2005Applicant: IXYS CorporationInventors: Markus Bickel, Ulrich Kelberlau
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Publication number: 20050218430Abstract: A fast switching diode includes an n? layer having an upper surface and a lower surface and a first edge and a second edge, the second edge provided on an opposing side of the first edge. A converted region is provided proximate the upper surface of the n? layer. The converted region includes platinum and has a first depth. The converted region has a platinum concentration that is substantially greater than an n-type dopant concentration in the converted region. First and second n+ regions are provided proximate the first and second edges of the n? layer, respectively, and extend from the upper surface of the n? layer to second and third depths, respectively. Each of the second and third depths is greater than the first depth to reduce leakage current. A first electrode is provided proximate the upper surface of the n? layer. A second electrode is provided proximate the lower surface of the n? layer.Type: ApplicationFiled: March 22, 2005Publication date: October 6, 2005Applicant: IXYS CorporationInventor: Ulrich Kelberlau
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Patent number: 6936908Abstract: A power device includes a gate electrode, a source electrode, and a drain electrode provided within an active region of a semiconductor substrate of first conductivity type. A vertical diffusion region of second conductivity is provided at a periphery the active region. The vertical diffusion region extends continuously from a top surface of the substrate to a bottom surface of the substrate. The vertical diffusion region includes an upper portion having a first depth and a lower portion having a second depth that is substantially greater than the first depth.Type: GrantFiled: March 13, 2002Date of Patent: August 30, 2005Assignee: IXYS CorporationInventors: Ulrich Kelberlau, Peter Ingram, Nathan Zommer
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Publication number: 20050051862Abstract: An over-voltage protection device includes a substrate including an upper surface and a lower surface; a first electrode provided on the upper surface of the substrate; a second electrode provided on the lower surface on the substrate; a first conductive layer overlying the lower surface of the substrate, the first conductive region being a conductive region of a first type; a plurality of first conductive regions provided proximate the upper surface of the substrate, the plurality of first conductive regions being conductive regions of the first type; and a plurality of second conductive region provided proximate the upper surface of the substrate, the plurality of second conductive region being conductive regions of a second type. The plurality of the first conductive regions are provided in an alternating manner with the plurality of second conductive regions. The first electrode is contacting the plurality of the first and second conductive regions.Type: ApplicationFiled: August 30, 2004Publication date: March 10, 2005Inventor: Ulrich Kelberlau
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Publication number: 20040119087Abstract: A power device includes a semiconductor substrate of first conductivity having an upper surface and a lower surface. An isolation diffusion region of second conductivity is provided at a periphery of the substrate and extends from the upper surface to the lower surface of the substrate. The isolation diffusion region has a first surface corresponding to the upper surface of the substrate and a second surface corresponding to the lower surface. A peripheral junction region of second conductivity is formed at least partly within the isolation diffusion region and formed proximate the first surface of the isolation diffusion region. First and second terminals are provided.Type: ApplicationFiled: August 27, 2003Publication date: June 24, 2004Applicant: IXYS CorporationInventors: Subhas C. Bose Jayappa Veeramma, Ulrich Kelberlau
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Publication number: 20030214012Abstract: A power device includes a substrate assembly including an upper surface and a lower surface. The substrate assembly includes a first layer and a second layer. The first layer overlies the second layer and has different conductivity than the second layer. A first electrode is provided proximate the upper surface. A second electrode is provided proximate the upper surface and is spaced apart from the first electrode. The second layer is configured to provide a current path between the first and second electrodes.Type: ApplicationFiled: May 5, 2003Publication date: November 20, 2003Applicant: IXYS CorporationInventors: Ulrich Kelberlau, Nathan Zommer
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Publication number: 20020171116Abstract: A power device includes a gate electrode, a source electrode, and a drain electrode provided within an active region of a semiconductor substrate of first conductivity type. A vertical diffusion region of second conductivity is provided at a periphery the active region. The vertical diffusion region extends continuously from a top surface of the substrate to a bottom surface of the substrate. The vertical diffusion region includes an upper portion having a first depth and a lower portion having a second depth that is substantially greater than the first depth.Type: ApplicationFiled: March 13, 2002Publication date: November 21, 2002Applicant: IXYS CorporationInventors: Ulrich Kelberlau, Peter Ingram, Nathan Zommer
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Patent number: 6259123Abstract: A switching device is described having a semiconductor substrate with a front side and a back side. The switching device includes a first transistor which includes a first region adjacent the front side, a second region within the first region, the semiconductor substrate, and at least one island region adjacent the backside. The switching device also includes a second transistor which includes the first region, the second region, the semiconductor substrate, and a third region coupled to the at least one island region.Type: GrantFiled: July 6, 1998Date of Patent: July 10, 2001Inventors: Ulrich Kelberlau, Nathan Zommer
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Patent number: 5851857Abstract: A switching device is described having a semiconductor substrate with a front side and a back side. The switching device includes a first transistor which includes a first region adjacent the front side, a second region within the first region, the semiconductor substrate, and at least one island region adjacent the backside. The switching device also includes a second transistor which includes the first region, the second region, the semiconductor substrate, and a third region coupled to the at least one island region.Type: GrantFiled: September 4, 1996Date of Patent: December 22, 1998Assignee: IXYS CorporationInventors: Ulrich Kelberlau, Nathan Zommer