Abstract: A metallization, for carrying current in an electrical component, includes a bottom layer overlying a substrate surface and includes titanium (Ti) or a titanium compound as main constituent. An upper layer overlies the bottom layer and includes copper (Cu) as main constituent. The bottom layer and the upper layer form a base layer. A top layer is in direct contact with the upper layer and includes aluminum (Al) as main constituent. The base layer further includes a middle layer, consisting of silver, that is arranged between the bottom layer and the upper layer.

Abstract: The present invention concerns an electroacoustic filter (1), comprising an electrode (2) having a main layer (6) which consists of a metallic material comprising an alloy of copper and molybdenum. According to a second aspect, the present invention concerns a method of manufacturing an electroacoustic filter (1), comprising the steps of: providing a substrate (3), sputtering a metallic material comprising an alloy of copper and molybdenum onto the substrate (3), annealing the metallic material, and pattering the metallic material to form a main layer (6) of an electrode (2).

Abstract: A method for producing a dielectric layer on the surface of a component is described. In particular embodiments, a dielectric layer having a planar surface can be generated over a substrate topography having raised structures. In a trimming process, a component property, which depends on the thickness or the third topography of the dielectric layer, is adjusted.

Abstract: A metallization, for carrying current in an electrical component, includes a bottom layer overlying a substrate surface and includes titanium (Ti) or a titanium compound as main constituent. An upper layer overlies the bottom layer and includes copper (Cu) as main constituent. The bottom layer and the upper layer form a base layer. A top layer is in direct contact with the upper layer and includes aluminum (Al) as main constituent. The base layer further includes a middle layer, consisting of silver, that is arranged between the bottom layer and the upper layer.

Abstract: A metallization can be used for components working with acoustic waves. The metallization includes a base having a bottom layer comprising titanium, and an upper layer comprising copper. A top layer of the metallization disposed on the base comprises aluminum.

Abstract: A component is designed to work with acoustic waves. Embodiments have an improved temperature gradient of the frequency range and have increased performance strength. To this end, the component includes a stack of layers having a lower bonding layer, an electrode layer, an upper bonding layer, a compensation layer, and a trimming layer.

Abstract: A component is designed to work with acoustic waves. Embodiments have an improved temperature gradient of the frequency range and have increased performance strength. To this end, the component includes a stack of layers having a lower bonding layer, an electrode layer, an upper bonding layer, a compensation layer, and a trimming layer.

Abstract: A method for producing a dielectric layer on the surface of a component is described. In particular embodiments, a dielectric layer having a planar surface can be generated over a substrate topography having raised structures. In a trimming process, a component property, which depends on the thickness or the third topography of the dielectric layer, is adjusted.

Abstract: A metallization can be used for components working with acoustic waves. The metallization includes a base having a bottom layer comprising titanium, and an upper layer comprising copper. A top layer of the metallization disposed on the base comprises aluminum.

Abstract: Elements and methods for forming elements that operate with acoustic waves are disclosed. The element includes a piezoelectric electric substrate that has a first thermal coefficient of expansion, electrically conducting element structures on an upper side of the substrate, a compensation layer on an underside of the substrate, and an SiO2 layer over the element structures.

Abstract: An apparatus including a piezoelectric substrate having at least one transducer electrode structure. The structure having a metallization formed by one or more metals with a mean specific density that is at least 50% higher than that of aluminum. The structure having a compensation layer that is applied fully or partially over the metallization. The compensation layer is of a material having a temperature dependence of elastic constants that counteracts the temperature coefficient of frequency of the substrate. The compensation layer has a thickness that is less than 15% of an acoustic wavelength of a wave capable of propagation in the structure.

Abstract: For a component operating with acoustic waves, it is proposed to arrange the electrode structure over a mechanically stable adaptation layer that serves to dissipate the electromechanical stresses. Further improvements of the output compatibility are achieved with additional intermediate layers and passivation layers applied on the sides or the entire surface over the electrode structure.

Abstract: Elements and methods for forming elements that operate with acoustic waves are disclosed. The element includes a piezoelectric electric substrate that has a first thermal coefficient of expansion, electrically conducting element structures on an upper side of the substrate, a compensation layer on an underside of the substrate, and an SiO2 layer over the element structures.

Abstract: For a component operating with acoustic waves, it is proposed to arrange the electrode structure over a mechanically stable adaptation layer that serves to dissipate the electromechanical stresses. Further improvements of the output compatibility are achieved with additional intermediate layers and passivation layers applied on the sides or the entire surface over the electrode structure.

Abstract: SAW component with improved temperature coefficient of frequency To reduce losses in a SAW component assembled on a piezoelectric substrate (S), the mass load on the metallization (M) is increased until the propagation velocity of the surface wave comes to rest below the propagation velocity of the fast shear wave. To limit the increase in the temperature coefficient of frequency in this process, a metallization with a significantly higher specific density than [that of] Al is used. The temperature coefficient of frequency of the component is simultaneously reduced by a compensation layer (K) applied to essentially the entire surface, said compensation layer being made of a material having a temperature dependency of the elastic coefficient that counteracts that of the substrate-metallization combination.

Abstract: In a configuration, a received radiation is converted into a storable secondary energy by a transducer. From the stored secondary energy, a nonlinear element of the configuration generates a radio-frequency signal. A coding element impresses an information item on the radio-frequency signal to generate a response signal. The impressed information can be information on the value of an environmental parameter detected by the coding element, which, in turn, can be a physical quantity or type and/or concentration of a substance.

Abstract: A method for representing logic changes of state occurring at a plurality of adjacent circuit nodes in an integrated circuit in the form of a logic image employs a pulsed electron probe which always scans a same path in the x-direction on the integrated circuit and the phase of the electron pulses comprising the pulsed electron probe is continuously shifted for each new scanning operation. The integrated circuit can be imaged up to the edge of a recording or field of view limit and it is only at this limit that the y-deflection of the pulsed electron probe is fixed. Very small spacings, such as those occurring between adjacent integrated circuit tracks, can thus be reliably imaged on the picture screen of the scanning electron microscope.

Abstract: A method for measuring a resistance and a capacitance of an electronic component utilizes electron beam measuring technology to impress a current I.sub.A by means of a pulsed electron beam on the component. A potential curve U(t) which arises during the pulse on the electronic component as a result of the impressed current is utilized together with the known current to determine the resistance R and the capacitance C by means of an appropriate selection of two measuring points U(t.sub.1) and U(t.sub.2) on the potential curve.BACKGROUND OF THE INVENTIONThe invention relates to a method for measuring resistances and capacitances of eletronic components.Up to now, the measurement of resistances and capacitances of electronic components was carried out with a mechanical probe. The smallest measurable capacitance according to this method amounted to 1 pF. The loading effects associated with such probes affects accurate measurement.