Abstract: A method for transferring of monocrystalline, thin layers from a first monocrystalline substrate onto a second substrate, with a reduced requirement with respect to the hydrogen dose needed for layer splitting is realized by co-implantation of hydrogen-trap inducing ions with hydrogen ions, by the high temperature implantation of hydrogen, and by their combination, followed by a heat-treatment to weaken the connection between the implanted layer and the rest of the first substrate, then forming a strong bond between the implanted first substrate and the second substrate and finally using another heat-treatment in order to split the monocrystalline thin layer from the rest of the first substrate by the formation, and growth of hydrogen filled microcracks.

Abstract: A method for transferring of monocrystalline, thin layers from a first monocrystalline substrate onto a second substrate, which may have a substantially different coefficient of thermal expansion than the first substrate is realized by producing hydrogen-traps in the first substrate by a first implantation and then implanting hydrogen followed by a heat-treatment to weaken the connection between the implanted layer and the rest of the first substrate, then forming a strong bond between the implanted first substrate and the second substrate and finally using another heat-treatment in order to split the monocrystalline thin layer from the rest of the first substrate by the formation, growth and overlapping of hydrogen filled microcracks.

Abstract: A process is disclosed for producing microporous crystalline silicon which has a band-gap substantially increased relative to that of normal crystalline silicon. This process involves the preparation of quantum wires of silicon by means of a chemical attack method carried out on silicon that has been doped such that it conducts electricity substantially via the effective transport of electric charge by means of so-called holes. The microporous crystalline silicon thus produced is in the form of a discrete mass having a bulk-like, interconnected crystalline silicon structure of quantum wires whose band-gap is greater than normal crystalline silicon. Because of this increased band-gap this microporous crystalline silicon may be used as an active element in applications such as tandem solar cells.

Abstract: A method for forming a thin crystal layer of silicon on top of a insulating layer that is supported by a silicon wafer used for electronic device applications. Carbon ions are implanted in a silicon wafer in order to form an etch stop. Said wafer is bonded to a supporting wafer that has an insulating surface layer of silicon oxide or silicon nitride. The silicon substrate of the implanted wafer is removed using an alkaline etching solution or grinding and alkaline etching. The remaining carbon implanted layer forms the thin silicon layer.

Abstract: A method for bubble-free bonding of silicon wafers to silicon wafers or silicon wafers to quartz wafers either outside or inside a Clean Room. The method includes the steps of positioning wafers in closely spaced-apart and parallel relationship to each other in a rack or the like with mirror-polished surfaces of the wafers facing each other, cleansing the mirror-polished surfaces with a hydrophilization cleansing solution, flushing the cleansing solution from the mirror-polished surfaces of the wafers with deionized water, drying the wafers in a spin-dryer, and moving the wafers together so that contact occurs between opposing mirror-polished surfaces of the wafers and bonding occurs. The bonded wafers are then placed into a wafer shipping and storing container for improved wafer storage performance.

Abstract: A method for bubble-free bonding of silicon wafers to silicon wafers or silicon wafers to quartz wafers either outside or inside a Clean Room. The method includes the steps of positioning wafers in closely spaced-apart and parallel relationship to each other in a rack or the like with mirror-polished surfaces of the wafers facing each other, cleansing the mirror-polished surfaces with a hydrophilization cleansing solution, flushing the cleansing solution from the mirror-polished surfaces of the wafers with deionized water, drying the wafers in a spin-dryer, and moving the wafers together so that contact occurs between opposing mirror-polished surfaces of the wafers and bonding occurs.