Abstract: An object with an internal cavity may serve as a cooling structure for a semiconductor package. The object includes a stack of form fitting bodies. The stack has a first form fitting body shaped according to the cavity with a first layer forming a partially form fitting surface, the first layer including a mixture of a first metal and an oxide of the first metal, and a second layer adjacent to the first layer. The second layer includes the first metal but less oxide of the first metal than the first layer. The stack has a second form fitting body shaped according to the cavity with a first layer forming a partially form fitting surface configured to conform to the partially form fitting surface of the first form fitting body.

Abstract: A method for bonding two partially form-fitting surfaces of two metal bodies which contain the same metal is carried out by generating a first layer on the surface of a first one of the two bodies, the first layer containing a mixture of the metal and the oxide of the metal; generating a second layer on the first layer, the second layer containing the metal but less oxide of the metal than does the first layer; placing the partially form-fitting surfaces of the two metal bodies adjacent to each other; heating the bodies placed adjacent to each other to a temperature which lies in a target range below the melting point of the metal and above the eutectic temperature of the eutectic of the metal and the metal oxide; and holding the temperature within the target range over a predetermined or a controllable duration of time.

Abstract: A method for bonding two partially form-fitting surfaces of two metal bodies which contain the same metal is carried out by generating a first layer on the surface of a first one of the two bodies, the first layer containing a mixture of the metal and the oxide of the metal; generating a second layer on the first layer, the second layer containing the metal but less oxide of the metal than does the first layer; placing the partially form-fitting surfaces of the two metal bodies adjacent to each other; heating the bodies placed adjacent to each other to a temperature which lies in a target range below the melting point of the metal and above the eutectic temperature of the eutectic of the metal and the metal oxide; and holding the temperature within the target range over a predetermined or a controllable duration of time.

Abstract: A position sensor for supplying digital signals corresponding to the position of a movable part in non-contacting, reliable fashion. A number of individual electrodes are applied on a substrate with a layer of a-Si:H applied thereon. A common, large-area collector electrode is applied over the a-Si:H layer. A light beam is moved over the collector electrode to activate a predetermined combination of photosensitive pixels which may be photodiodes or photoresistors. These pixels are situated between the individual electrodes and the common collector electrode. The output signals of the photodiodes are in the form of a digital code that characterizes the location of the light beam.

Abstract: An image sensor module for reading optical information on an original and converting the information into electrical signals, has a row of opto-electrical sensors, each sensor having associated processing circuitry integrated therewith in the module. The drive module functions as the substrate for the sensors as well, which are separated from the substrate by an insulator layer, having openings therein for making electrical connection between the substrate and the sensor.

Abstract: An image sensor line for reading optical information is constructed of a number of identical modules disposed side-by-side. Each module includes a row of sensors, such as optoelectrical transducers, and a signal processing circuit. The sensors and signal processing circuit in combination form an integrated circuit module. Sensor lines of arbitrary length can be constructed from such modules.