Abstract: A two-channel semiconductor component has a doped semiconductor body formed from a group IV semiconductor material, a top-side top-gate electrode, and a bottom-side bottom-gate electrode. A source region has a greater extent in a depth direction in the silicon body than a drain region. A source isolation region is arranged between a source region and the top-gate electrode, and a drain isolation region is arranged between a drain region and the top-gate electrode, which isolation region extends in a depth direction as far as to the lower edge of a gate isolation layer of the top-gate electrode. In a first operating state a first conductive channel separated laterally from the source region by the source isolation region can be formed, as can a second conductive channel, which is decoupled from the first conductive channel by a barrier region of the semiconductor body extending in a depth direction between the conductive channels.

Abstract: A two-channel semiconductor component has a doped semiconductor body formed from a group IV semiconductor material, a top-side top-gate electrode, and a bottom-side bottom-gate electrode. A source region has a greater extent in a depth direction in the silicon body than a drain region. A source isolation region is arranged between a source region and the top-gate electrode, and a drain isolation region is arranged between a drain region and the top-gate electrode, which isolation region extends in a depth direction as far as to the lower edge of a gate isolation layer of the top-gate electrode. In a first operating state a first conductive channel separated laterally from the source region by the source isolation region can be formed, as can a second conductive channel, which is decoupled from the first conductive channel by a barrier region of the semiconductor body extending in a depth direction between the conductive channels.

Abstract: Disclosed herein is an accumulator comprising a housing; cells arranged in the housing wherein the cells are interconnected in an electrical series, and wherein the cells comprise a first cell and a last cell; a lid capable of closing the housing; and a connection region comprising: a first connection element; a second connection element; and a coding element for operation in conjunction with a plug element, wherein the coding element is constructed in a region of the lid or a region of the housing that surrounds the first connection element and the second connection element; and further wherein the first connection element is contacted with the first cell, and the second connection element is contacted with the last cell, and further wherein the first connection element and the second connection element are laterally led out of the housing and are parallel to the lid and arranged spatially close to one another.

Abstract: This invention concerns a plug system for capping cell vents (26, 27) of a storage battery, consisting of a plug body (1) that can be inserted in a cell vent (26, 27), holding a plug (2) and a valve element (3), thus providing a normally closed fluidic connection between the inside (30) of the cell and the atmosphere surrounding the storage battery.

Abstract: The cover (11) of an accumulator has a degassing channel (12) which connects the interior space (36) of one or more cells, with a side channel (14) formed in a side wall (13) of the cover (11). The side channel (14) is sealingly closed by a cover plate (15). At the beginning of the side channel (14), a porous body (17) is provided in a surround (20), whilst, in the end region of the side channel (14), a depression (23) is located, the depression (23) being provided in a cover plate and having a base (24) in which a gas outlet opening (16 ) is provided.