Patents by Inventor Ulrich Zehnder
Ulrich Zehnder has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8907359Abstract: An optoelectronic semiconductor component comprising a semiconductor layer sequence (3) based on a nitride compound semiconductor and containing an n-doped region (4), a p-doped region (8) and an active zone (5) arranged between the n-doped region (4) and the p-doped region (8) is specified. The p-doped region (8) comprises a p-type contact layer (7) composed of InxAlyGa1-x-yN where 0?x?1, 0?y?1 and x+y?1. The p-type contact layer (7) adjoins a connection layer (9) composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer (7) has first domains (1) having a Ga-face orientation and second domains (2) having an N-face orientation at an interface with the connection layer (9).Type: GrantFiled: September 16, 2009Date of Patent: December 9, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Martin Strassburg, Lutz Höppel, Matthias Peter, Ulrich Zehnder, Tetsuya Taki, Andreas Leber, Rainer Butendeich, Thomas Bauer
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Patent number: 8772804Abstract: A semiconductor light-emitting diode (10) is proposed having at least one p-doped light-emitting diode layer (4), an n-doped light-emitting diode layer (2) and an optically active zone (3) between the p-doped light-emitting diode layer (4) and the n-doped light-emitting diode layer (2), having an oxide layer (8) consisting of a transparent conductive oxide, and having at least one mirror layer (9), wherein the oxide layer (8) is disposed between the light-emitting diode layers (2, 4) and the at least one mirror layer (9), and comprises a first boundary surface (8a) which faces the light-emitting diode layers (2, 4) and a second boundary surface (8b) which faces the at least one mirror layer (9), and wherein the second boundary surface (8b) of the oxide layer (8) has less roughness (R2) than the first boundary surface (8a) of the oxide layer (8).Type: GrantFiled: February 11, 2009Date of Patent: July 8, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Magnus Ahlstedt, Johannes Baur, Ulrich Zehnder, Martin Strassburg, Matthias Sabathil, Berthold Hahn
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Patent number: 8278767Abstract: An optoelectronic component includes a carrier with a mounting side and having at least one functional element, at least one substrateless optoelectronic semiconductor chip with a top and an opposed bottom and is electrically conductive by way of the top and the bottom, wherein the bottom faces the mounting side and the semiconductor chip is mounted on the mounting side, and at least one structured electrical contact film located on the top.Type: GrantFiled: August 4, 2009Date of Patent: October 2, 2012Assignee: OSRAM Opto Semiconductors GmbHInventors: Ewald K. M. Günther, Siegfried Herrmann, Ulrich Zehnder, Herbert Brunner
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Patent number: 8138511Abstract: A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.Type: GrantFiled: December 7, 2006Date of Patent: March 20, 2012Assignee: Osram AGInventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Härle, Marianne Ortmann, Uwe Strauss, Johannes Völkl, Ulrich Zehnder
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Publication number: 20110316028Abstract: An optoelectronic semiconductor component comprising a semiconductor layer sequence (3) based on a nitride compound semiconductor and containing an n-doped region (4), a p-doped region (8) and an active zone (5) arranged between the n-doped region (4) and the p-doped region (8) is specified. The p-doped region (8) comprises a p-type contact layer (7) composed of InxAlyGa1-x-yN where 0?x?1, 0?y?1 and x+y?1. The p-type contact layer (7) adjoins a connection layer (9) composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer (7) has first domains (1) having a Ga-face orientation and second domains (2) having an N-face orientation at an interface with the connection layer (9).Type: ApplicationFiled: September 16, 2009Publication date: December 29, 2011Applicant: OSRAM Opto Semiconductors GmbHInventors: Martin Strassburg, Lutz Hoeppel, Matthias Peter, Ulrich Zehnder, Tetsuya Taki, Andreas Leber, Rainer Butendeich, Thomas Bauer
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Publication number: 20110204322Abstract: An optoelectronic semiconductor body is provided which has an epitaxial semiconductor layer sequence based on nitride compound semiconductors. The semiconductor layer sequence comprises a buffer layer, which is nominally undoped or at least partially n-conductively doped, an active zone, which is suitable for emitting or receiving electromagnetic radiation, and a contact layer, which is n-conductively doped, arranged between the buffer layer and the active zone. The n-dopant concentration is greater in the contact layer than in the buffer layer. The semiconductor layer sequence contains a recess, which extends through the buffer layer and in which an electrical contact material is arranged and adjoins the contact layer. A method is additionally indicated which is suitable for producing such a semiconductor body.Type: ApplicationFiled: November 26, 2008Publication date: August 25, 2011Applicant: OSRAM Opto Semiconductors GmbHInventors: Guido Weiss, Berthold Hahn, Ulrich Zehnder, Andreas Weimar
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Publication number: 20110198640Abstract: A semiconductor light-emitting diode (10) is proposed having at least one p-doped light-emitting diode layer (4), an n-doped light-emitting diode layer (2) and an optically active zone (3) between the p-doped light-emitting diode layer (4) and the n-doped light-emitting diode layer (2), having an oxide layer (8) consisting of a transparent conductive oxide, and having at least one mirror layer (9), wherein the oxide layer (8) is disposed between the light-emitting diode layers (2, 4) and the at least one mirror layer (9), and comprises a first boundary surface (8a) which faces the light-emitting diode layers (2, 4) and a second boundary surface (8b) which faces the at least one mirror layer (9), and wherein the second boundary surface (8b) of the oxide layer (8) has less roughness (R2) than the first boundary surface (8a) of the oxide layer (8).Type: ApplicationFiled: February 11, 2009Publication date: August 18, 2011Inventors: Magnus Ahlstedt, Johannes Baur, Ulrich Zehnder, Martin Strassburg, Matthias Sabathil, Berthold Hahn
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Publication number: 20110140284Abstract: An optoelectronic component includes a carrier with a mounting side and having at least one functional element, at least one substrateless optoelectronic semiconductor chip with a top and an opposed bottom and is electrically conductive by way of the top and the bottom, wherein the bottom faces the mounting side and the semiconductor chip is mounted on the mounting side, and at least one structured electrical contact film located on the top.Type: ApplicationFiled: August 4, 2009Publication date: June 16, 2011Applicant: OSRAM OPTO SEMICONDUCTORS GmbHInventors: Ewald K.M. Günther, Siegfried Herrmann, Ulrich Zehnder, Herbert Brunner
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Patent number: 7742677Abstract: A method for producing an optoelectronic component is disclosed. The method includes the steps of providing a substrate, applying a semiconductor layer sequence to the substrate, applying at least two current expansion layers to the semiconductor layer sequence, applying and patterning a mask layer, patterning the second current expansion layer by means of an etching process during which sidewalls of the mask layer are undercut, patterning the first current expansion layer by means of an etching process during which the sidewalls of the mask layer are undercut at least to a lesser extent than during the patterning of the second current expansion layer, and removing the mask layer.Type: GrantFiled: June 4, 2007Date of Patent: June 22, 2010Assignee: Osram Opto Semiconductors GmbHInventors: Franz Eberhard, Uwe Strauss, Ulrich Zehnder, Andreas Weimar, Raimund Oberschmid
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Patent number: 7592194Abstract: A radiation-emitting and/or -receiving semiconductor component comprising a semiconductor body (1), which has an active zone (2) provided for radiation generation or for radiation reception, a lateral main direction of extent and a main area, and also a protective layer (6) arranged on the main area and a contact (5) arranged on the main area, the protective layer (6) being spaced apart from the contact in the lateral direction. A method for the application of a contact to a semiconductor body (1) is also disclosed.Type: GrantFiled: May 2, 2005Date of Patent: September 22, 2009Assignee: Osram Opto Semiconductors GmbHInventors: Christoph Jonda, Ulrich Zehnder, Uwe Strauss
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Patent number: 7556974Abstract: An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.Type: GrantFiled: August 10, 2006Date of Patent: July 7, 2009Assignee: Osram Opto Semiconductors GmbHInventors: Volker Harle, Berthold Hahn, Hans-Jurgen Lugauer, Helmut Bolay, Stefan Bader, Dominik Eisert, Uwe Strauss, Johannes Volkl, Ulrich Zehnder, Alfred Lell, Andreas Weimar
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Patent number: 7446344Abstract: A radiation-emitting semiconductor chip, having a multilayer structure (100) containing a radiation-emitting active layer (10), and having a window layer (20), which is transmissive to a radiation emitted by the active layer (10) and is arranged downstream of the multilayer structure (100) in the direction of a main radiating direction of the semiconductor component. The window layer (20) has at least one peripheral side area (21), which, in the course from a first main area (22) facing the multilayer structure (100) in the direction toward a second main area (23) remote from the multilayer structure (100), firstly has a first side area region (24) which is beveled, curved or stepped in such a way that the window layer widens with respect to the size of the first main area (22). A peripheral side area (11) of the multilayer structure (100) and at least a part of the beveled, curved or stepped first side area region (24) are coated with a continuous electrically insulating layer (30).Type: GrantFiled: September 27, 2002Date of Patent: November 4, 2008Assignee: Osram Opto Semiconductors GmbHInventors: Michael Fehrer, Volker Harle, Frank Kuhn, Ulrich Zehnder
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Publication number: 20080179380Abstract: A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.Type: ApplicationFiled: December 7, 2006Publication date: July 31, 2008Inventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Harle, Marianne Ortmann, Uwe Strauss, Johannes Volkl, Ulrich Zehnder
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Publication number: 20070238210Abstract: A method for producing an optoelectronic component is disclosed. The method includes the steps of providing a substrate, applying a semiconductor layer sequence to the substrate, applying at least two current expansion layers to the semiconductor layer sequence, applying and patterning a mask layer, patterning the second current expansion layer by means of an etching process during which sidewalls of the mask layer are undercut, patterning the first current expansion layer by means of an etching process during which the sidewalls of the mask layer are undercut at least to a lesser extent than during the patterning of the second current expansion layer, and removing the mask layer.Type: ApplicationFiled: June 4, 2007Publication date: October 11, 2007Inventors: Franz Eberhard, Uwe Strauss, Ulrich Zehnder, Andreas Weimar, Raimund Oberschmid
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Publication number: 20070145402Abstract: This invention describes a radiation-emitting semiconductor component with the a multilayered structure that contains a radiation-emitting active layer, and a window transparent to radiation that has a first principal face and a second principal face opposite the first principal face, and whose first principal face adjoins the multilayered structure. At least one recess is made in the window, which preferably has the form of an indentation of the second principal face or as an edge excavation. At least one lateral surface of the window or of the recess is provided at least partially with a contact surface. Alternatively or cumulatively, at least one contact surface of the component has a plurality of openings.Type: ApplicationFiled: March 9, 2007Publication date: June 28, 2007Inventors: Dominik Eisert, Volker Harle, Frank Kuhn, Manfred Mundbrod-Vangerow, Uwe Strauss, Jacob Ulrich, Ernst Nirschl, Norbert Linder, Reinhard Sedlmeier, Ulrich Zehnder, Johannes Baur
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Patent number: 7227191Abstract: An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence (6) with a radiation-emitting active zone (4), the semiconductor layer sequence (6) having sidewalls (10). A connection contact (9) is provided for impressing current into the active zone. A first current expansion layer (7) adjoins a semiconductor layer (5) of the semiconductor layer sequence (6) and a second current expansion layer (8) is provided between the semiconductor layer sequence (6) and the connection contact (9). The first current expansion layer (7) has a larger sheet resistance than the second current expansion layer (8) and forms an ohmic contact with the adjoining semiconductor layer (5). The second current expansion layer (8) is applied to a partial region of the first current expansion layer (7) which is at a distance from the sidewalls (10).Type: GrantFiled: May 2, 2005Date of Patent: June 5, 2007Assignee: Osram Opto Semiconductors GmbHInventors: Franz Eberhard, Uwe Strauss, Ulrich Zehnder, Andreas Weimar, Raimund Oberschmid
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Patent number: 7205578Abstract: This invention describes a radiation-emitting semiconductor component with the a multilayered structure (4) that contains a radiation-emitting active layer (5), and a window (1) transparent to radiation that has a first principal face (2) and a second principal face (3) opposite the first principal face (2), and whose first principal face (2) adjoins the multilayered structure (4). At least one recess (8) is made in the window (1), which preferably has the form of an indentation of the second principal face or as an edge excavation. At least one lateral surface of the window (1) or of the recess (8) is provided at least partially with a contact surface (11). Alternatively or cumulatively, at least one contact surface of the component has a plurality of openings (14).Type: GrantFiled: February 15, 2001Date of Patent: April 17, 2007Assignee: Osram GmbHInventors: Dominik Eisert, Volker Härle, Frank Kühn, Manfred Mundbrod-Vangerow, Uwe Strauss, Jacob Ulrich, Ernst Nirschl, Norbert Linder, Reinhard Sedlmeier, Ulrich Zehnder, Johannes Baur
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Patent number: 7195942Abstract: Radiation-emitting semiconductor device, method for fabricating same and radiation-emitting optical device. A radiation-emitting semiconductor device with a multilayer structure (100) comprising a radiation-emitting active layer (10), with electrical contacts (30, 40) for impressing a current in the multilayer structure (100) and with a radiotransparent window layer (20). The window layer is arranged exclusively on the side of the multilayer structure (100) facing away from a main direction of radiation of the semiconductor device and has at least one side wall that includes a first side wall portion (20a) which extends obliquely, concavely or in a stepwise manner toward a central axis of the semiconductor device lying perpendicular to the multilayer sequence.Type: GrantFiled: May 3, 2004Date of Patent: March 27, 2007Assignee: Osram GmbHInventors: Dominik Eisert, Volker Haerle, Frank Kuehn, Manfred Mundbrod-Vangerow, Uwe Strauss, Ulrich Zehnder
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Patent number: 7169632Abstract: A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.Type: GrantFiled: September 9, 2003Date of Patent: January 30, 2007Assignee: Osram GmbHInventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Härle, Marianne Ortmann, Uwe Strauss, Johannes Völkl, Ulrich Zehnder
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Publication number: 20060289854Abstract: An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.Type: ApplicationFiled: August 10, 2006Publication date: December 28, 2006Inventors: Volker Harle, Berthold Hahn, Hans-Jurgen Lugauer, Helmut Bolay, Stefan Bader, Dominik Eisert, Uwe Strauss, Johannes Volkl, Ulrich Zehnder, Alfred Lell, Andreas Weimer