Patents by Inventor Urban Robert Kultgen, II

Urban Robert Kultgen, II has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • POLYCRYSTALLINE SILICON PRODUCTION
    Publication number: 20130115374
    Abstract: A chemical vapor deposition (CVD) reactor system has a reaction chamber enclosed by a reaction chamber wall with an inner surface disposed towards the interior of the chamber. At least a portion of the wall is a heat control layer that faces the chamber and that consists of a material, such as electrolytic ally deposited nickel, that has an emissivity coefficient, as measured at 300K, of 0.1 or less and a hardness of at least 3.5 Moh. Polycrystalline silicon is produced from silicon-rich gases using such a CVD reactor system.
    Type: Application
    Filed: July 19, 2011
    Publication date: May 9, 2013
    Inventors: Krishnakumar M. Jayakar, Urban Robert Kultgen, II
  • PROCESS CONTROL APPLICATION DEVELOPMENT ENVIRONMENT AND FEATURES
    Publication number: 20110022197
    Abstract: A process control application development environment provides an abstraction layer for vendor-independent process control application development. Various features such as validation of high-level representations of process control applications, exception handler agents, structured interactive operation of multiple machines, and multiple device states can be implemented for process control applications.
    Type: Application
    Filed: July 26, 2010
    Publication date: January 27, 2011
    Applicant: REC Advanced Silicon Materials LLC
    Inventor: Urban Robert Kultgen, II