Abstract: An elevator monitoring system and method includes cabin-based radars monitor doors and passengers within a cabin; waiting zone radars monitor passengers in a waiting zone; a central processor analyzes data from the various monitors and executes an elevator control function to control the elevator system. The door state is determined by detecting reflections from internal angles within the cabin and a door management system manages door operation safely by monitoring a proximal zone around the automatic door, detecting moving objects and obstructions.

Abstract: One embodiment is a semiconductor device including: at least one patterned dielectric layer having at least one opening therein, said at least one opening having sidewalls and bottom; at least one barrier layer disposed over the sidewalls and bottom; a first metallic layer disposed over the at least one barrier layer; a second metallic layer disposed over the first metallic layer; and a metallic filling layer disposed over the second metallic layer; wherein: the first metallic layer is continuous over the sidewalls and bottom, has a thickness in a range from about 10 ? to no more than 40 ? over a sidewall of the at least one opening; and the second metallic layer, and the metallic filling layer are selected from a group consisting of Cu, Ag, and alloys containing one or more of these metals.

Abstract: One embodiment of the present invention one embodiment of the present invention is a method for electrofilling a metal or alloy inside at least one opening surrounded by a field on a front surface of a substrate, wherein at least one surface inside the at least one opening includes an exposed metallic surface, said method including steps of: (a) immersing the substrate in an activation or wetting solution; (b) applying ultrasonic or megasonic vibrations to the substrate; and, after commencing applying ultrasonic or megasonic vibrations to the substrate, (c) applying high pressure jets of an electrolyte to the substrate, said electrolyte includes metallic ions of said metal or alloy; and (d) applying an electroplating current to the substrate to electroplate said metal or alloy inside the at least one opening.

Abstract: One embodiment of the present invention is a method for depositing two or more PVD seed layers for electroplating metallic interconnects over a substrate, the substrate including a patterned insulating layer which includes at least one opening surrounded by a field, the at least one opening having top corners, sidewalls, and bottom, the field and the at least one opening being ready for depositing one or more seed layers, and the method includes: (a) depositing by a PVD technique, in a PVD chamber, a continuous PVD seed layer over the sidewalls and bottom of the at least one opening, using a first set of deposition parameters; and (b) depositing by a PVD technique, in a PVD chamber, another PVD seed layer over the substrate, using a second set of deposition parameters, wherein (i) the second set of deposition parameters includes at least one deposition parameter which is different from any of the parameters in the first set of deposition parameters, or the second set of deposition parameters includes at least

Abstract: One embodiment is a method for producing void-free electroplated metallic conductors inside openings by electrochemical deposition (ECD), said method including steps of: forming at least one opening in a substrate, said at least one opening having an aspect ratio in a range from 8:1 to 28:1; forming at least one barrier layer over the sidewalls of the at least one opening; depositing at least one seed layer over the at least one barrier layer; immersing the substrate in an electrolyte contained in an ECD cell, the ECD cell including at least one anode and a cathode, wherein the electrolyte includes plating metallic ions and at least one inhibitor additive; providing agitation of the electrolyte across the surface of the substrate by moving multiple non-contacting wiping blades relative to the substrate, wherein the agitation facilitates a limiting current density larger by at least an order of magnitude than a limiting current density without the agitation; and applying an average electroplating current densi

Abstract: One embodiment is a method for producing void-free electroplated metallic conductors inside openings by electrochemical deposition (ECD), said method including steps of: forming at least one opening in a substrate, said at least one opening having an aspect ratio in a range from 8:1 to 28:1; forming at least one barrier layer over the sidewalls of the at least one opening; depositing at least one seed layer over the at least one barrier layer; immersing the substrate in an electrolyte contained in an ECD cell, the ECD cell including at least one anode and a cathode, wherein the electrolyte includes plating metallic ions and at least one inhibitor additive; providing agitation of the electrolyte across the surface of the substrate by moving multiple non-contacting wiping blades relative to the substrate, wherein the agitation facilitates a limiting current density larger by at least an order of magnitude than a limiting current density without the agitation; and applying an average electroplating current densi

Abstract: One embodiment is a method for producing void-free electroplated metallic conductors, the method including steps of: (a) providing a substrate having an insulating mask formed over a metallic seed layer, said insulating mask having at least one opening formed therein, wherein inside the at least one opening only the bottom surface includes exposed metallic seed layer; (b) immersing the substrate in an electrolyte contained in an electrochemical deposition (ECD) cell, the ECD cell including at least one anode and a cathode, wherein the cathode includes at least the exposed metallic seed layer at the bottom of the at least one opening, and wherein the electrolyte includes plating metallic ions and at least one inhibitor additive, said metallic ions and said at least one inhibitor additive having concentrations; (c) providing agitation of the electrolyte across the surface of the substrate; (d) electroplating inside the at least one opening wherein (i) the agitation and the concentrations of the plating metallic

Abstract: A lossless call may be established over a wireless radio network by determining, at a target subscriber device during a received call, that one or more identified media items in a stream of media items of the call being received over a first radio channel was not successfully received, and responsively: continuing to receive first subsequent media items of the call and buffering, instead of rendering at the target subscriber device, the first subsequent media items, requesting the identified media items, receiving by the target subscriber device via an established second radio channel, different from the first radio channel, the identified media items, re-ordering the identified media items chronologically with respect to the buffered first subsequent media items to create the re-ordered subsequent media stream, and rendering, by the target subscriber device, the re-ordered subsequent media stream at a first increased relative rate.

Abstract: One embodiment is a method for producing void-free electroplated metallic conductors, the method including steps of: (a) providing a substrate having an insulating mask formed over a metallic seed layer, said insulating mask having at least one opening formed therein, wherein inside the at least one opening only the bottom surface includes exposed metallic seed layer; (b) immersing the substrate in an electrolyte contained in an electrochemical deposition (ECD) cell, the ECD cell including at least one anode and a cathode, wherein the cathode includes at least the exposed metallic seed layer at the bottom of the at least one opening, and wherein the electrolyte includes plating metallic ions and at least one inhibitor additive, said metallic ions and said at least one inhibitor additive having concentrations; (c) providing agitation of the electrolyte across the surface of the substrate; (d) electroplating inside the at least one opening wherein (i) the agitation and the concentrations of the plating metallic

Abstract: One embodiment is a semiconductor device including: at least one patterned dielectric layer having at least one opening therein, said at least one opening having sidewalls and bottom; at least one barrier layer disposed over the sidewalls and bottom; a first metallic layer disposed over the at least one barrier layer; a second metallic layer disposed over the first metallic layer; and a metallic filling layer disposed over the second metallic layer; wherein: the first metallic layer is continuous over the sidewalls and bottom, has a thickness in a range from about 10 ? to no more than 40 ? over a sidewall of the at least one opening; and the second metallic layer, and the metallic filling layer are selected from a group consisting of Cu, Ag, and alloys containing one or more of these metals.

Abstract: A lossless call may be established over a wireless radio network by determining, at a target subscriber device during a received call, that one or more identified media items in a stream of media items of the call being received over a first radio channel was not successfully received, and responsively: continuing to receive first subsequent media items of the call and buffering, instead of rendering at the target subscriber device, the first subsequent media items, requesting the identified media items, receiving by the target subscriber device via an established second radio channel, different from the first radio channel, the identified media items, re-ordering the identified media items chronologically with respect to the buffered first subsequent media items to create the re-ordered subsequent media stream, and rendering, by the target subscriber device, the re-ordered subsequent media stream at a first increased relative rate.

Abstract: A software architecture and infrastructure to seamlessly scale mission-critical, high performance, stateful enterprise applications on any cloud environment (public as well as private). The described invention will allow converting an application to a scalable application and will provide a method and a system to efficiently scale up the performance of such an application based on space-based architecture.

Abstract: One embodiment is a device which includes at least one filled via or trench wherein the at least one filled via or trench includes void-free filled metal or alloy, and the filled via or trench has an aspect ratio in a range from 9:1 to about 28:1.

Abstract: One embodiment is a method for void-free metallic electrofilling inside openings, said method includes: providing a substrate with at least one opening, the substrate includes an electrically conductive surface, including inside the at least one opening; immersing the substrate in an electrolyte contained in an ECD cell, the ECD cell includes at least one anode and a cathode, the cathode includes at least a portion of the conductive surface, the electrolyte includes plating metallic ions and at least one inhibitor additive, said metallic ions and at least one inhibitor additive having concentrations; providing electrolyte agitation across the substrate surface; and applying electroplating current density to the substrate; wherein the agitation, the concentrations, and the electroplating current density are such to produce void-free metallic electrofilling of the at least one opening, and wherein a height of electrodeposited surface bumps, or transition steps or humps, or transition spikes, is less than 140 nm

Abstract: One embodiment is a method for void-free metallic electrofilling inside openings, said method includes: providing a substrate with at least one opening, the substrate includes an electrically conductive surface, including inside the at least one opening; immersing the substrate in an electrolyte contained in an ECD cell, the ECD cell includes at least one anode and a cathode, the cathode includes at least a portion of the conductive surface, the electrolyte includes plating metallic ions and at least one inhibitor additive, said metallic ions and at least one inhibitor additive having concentrations; providing electrolyte agitation across the substrate surface; and applying electroplating current density to the substrate; wherein the agitation, the concentrations, and the electroplating current density are such to produce void-free metallic electrofilling of the at least one opening, and wherein a height of electrodeposited surface bumps, or transition steps or humps, or transition spikes, is less than 140 nm

Abstract: One embodiment of the present invention is a device including at least a portion of a void-free electroplated metallic interconnect embedded in an opening, said opening having sidewalls, said sidewalls include at least one dielectric layer, wherein the opening has an aspect ratio in a range from 7:1 to 20:1, and wherein the portion of the electroplated metallic interconnect includes a material selected from a group consisting of Cu, Ag, and alloys including at least one of these metals.

Abstract: One embodiment of the present invention is a method for producing a silicon (Si) and/or germanium (Ge) foil, the method including: dissolving a Si and/or Ge source material in a molten metallic bath at an elevated temperature T2, wherein the density of Si and/or Ge is smaller than the density of the molten metallic bath; cooling the molten metallic bath to a lower temperature T1, thereby causing Si and/or Ge to separate out of the molten metallic bath and to float and grow as a Si and/or Ge foil on a top surface of the molten metallic bath; and separating the floating Si and/or Ge foil from the top surface of the molten metallic bath.

Abstract: A method is disclosed for depositing multiple seed layers for metallic interconnects over a substrate, the substrate includes a patterned insulating layer which comprises an opening surrounded by a field, said opening has sidewalls and top corners, and the method including: depositing a continuous seed layer over the sidewalls, using a first set of deposition parameters; and depositing another seed layer over the substrate, including inside the opening and over a portion of said field, using a second set of deposition parameters, wherein: the second set of deposition parameters includes one deposition parameter which is different from any parameters in the first set, or whose value is different in the first and second sets; the continuous seed layer has a thickness in a range from about 20 ? to not more than 250 ? over the field; and the combined seed layers leave sufficient room for electroplating inside the opening.

Abstract: One embodiment of the present invention is a method for producing a silicon (Si) and/or germanium (Ge) foil, the method including: dissolving a Si and/or Ge source material in a molten metallic bath at an elevated temperature T2, wherein the density of Si and/or Ge is smaller than the density of the molten metallic bath; cooling the molten metallic bath to a lower temperature T1, thereby causing Si and/or Ge to separate out of the molten metallic bath and to float and grow as a Si and/or Ge foil on a top surface of the molten metallic bath; and separating the floating Si and/or Ge foil from the top surface of the molten metallic bath.

Abstract: One embodiment of the invention is an apparatus for electrochemical deposition (ECD) of a metal or an alloy inside at least one opening located at a front surface of a substrate, said apparatus including: (a) an electrochemical deposition (ECD) cell adapted to contain an electrolyte, the electrolyte including plating metallic ions and at least one inhibitor additive; (b) a cathode including at least a portion of said front surface of the substrate, wherein at least one surface inside said at least one opening includes an exposed metallic surface, and wherein at least a portion of said cathode is immersed in said electrolyte; (c) at least one anode, wherein at least a portion of the at least one anode is immersed in said electrolyte; (d) a power supply adapted to generate an electroplating current through the electrolyte between said cathode and said at least one anode; and (e) means for producing a turbulent flow of the electrolyte across the front surface of the substrate, wherein the turbulent flow is capab