Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a base having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the base, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; and a thermal gasket disposed in a gap between the base and gas distribution plate.

Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a base having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the base, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; and a thermal gasket disposed in a gap between the base and gas distribution plate.

Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a body having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the body, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body; and a thermal gasket disposed in a gap between the body and gas distribution plate.

Abstract: A method, apparatus and system for dechucking a processing object from a surface of an electrostatic chuck (ESC) in a processing chamber can include applying to the ESC for a first time interval, a first dechuck voltage having a substantially equal magnitude and opposite polarity of a chuck voltage chucking the processing object to the surface of the ESC, selecting a second dechuck voltage having an opposite polarity as the first dechuck voltage, linearly sweeping the ESC voltage from the first dechuck voltage to the second dechuck voltage over a second time interval, monitoring the ESC current during the second time interval until a current spike in the ESC current above a threshold is detected, communicating a command to move support pins up to remove the processing object from the ESC surface, and maintaining the second dechuck voltage until the processing object is separated from the surface of the ESC.

Abstract: Embodiments include a plasma processing method for cleaning polymer byproducts from interior surfaces of the plasma chamber. In an embodiment the plasma process may include processing a workpiece in a plasma processing chamber. Thereafter, the method may include removing the workpiece from the processing chamber. After the workpiece is removed, embodiments may include cleaning the plasma processing chamber with a cleaning process that includes a high pressure cleaning process, a first low pressure cleaning process, and a second low pressure cleaning process, wherein the second low pressure cleaning process includes applying a pulsed bias.

Abstract: Embodiments include a plasma processing method for cleaning polymer byproducts from interior surfaces of the plasma chamber. In an embodiment the plasma process may include processing a workpiece in a plasma processing chamber. Thereafter, the method may include removing the workpiece from the processing chamber. After the workpiece is removed, embodiments may include cleaning the plasma processing chamber with a cleaning process that includes a high pressure cleaning process, a first low pressure cleaning process, and a second low pressure cleaning process, wherein the second low pressure cleaning process includes applying a pulsed bias.

Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a body having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the body, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body; and a thermal gasket disposed in a gap between the body and gas distribution plate.

Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a base having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the base, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; and a thermal gasket disposed in a gap between the base and gas distribution plate.

Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a base having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the base, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; and a thermal gasket disposed in a gap between the base and gas distribution plate.

Abstract: A method and apparatus are provided for etching semiconductor and dielectric substrates through the use of plasmas based on mixtures of a first gas having the formula CaFb, and a second gas having the formula CxHyFz, wherein a/b??, and wherein x/z?½. The mixtures may be used in low or medium density plasmas sustained in a magnetically enhanced reactive ion chamber to provide a process that exhibits excellent corner layer selectivity, photo resist selectivity, under layer selectivity, and profile and bottom CD control. The percentages of the first and second gas may be varied during etching to provide a plasma that etches undoped oxide films or to provide an etch stop on such films.