Abstract: A bi-directional switch for an inductive machine is described. The bi-directional switch may include a first power semiconductor transistor with a first source, a first drain, and a first gate. The bi-directional switch may further include a second power semiconductor transistor with a second source, a second drain, and a second gate. The bi-directional switch may include the second source connected to the first source. The bi-directional switch may include a soft-starter device including a control circuit configurable to provide a first control signal to the first power semiconductor transistor and a second control signal to the second power semiconductor transistor.

Abstract: In one aspect, a solid-state circuit breaker (SSCB) is provided. The SSCB is configured to generate a first output representative of a current through a current path of the SSCB. An analog fault detection circuit is coupled with first output and is configured to assert a second output in response to the current exceeding a trip current level. At least one analog-to-digital converter (ADC) is configured to generate samples of the first output, where the at least one ADC has a di/dt detection bandwidth that is less than a di/dt detection bandwidth of the analog fault detection circuit. The SSCB is further configured to disable the current path through the SSCB in response to determining, asynchronously, that either the second output is being asserted by the analog fault detection circuit or the samples indicate that the current through the current path exceeds the trip current level.

Abstract: A device for load line regulation of a sigma convert is provided. The device comprises a sigma converter comprising an inductor inductor capacitor (LLC) circuit and a buck converter. The device also comprises control circuitry for the sigma converter. The control circuitry is configured to receive a plurality of electrical measurements associated with the sigma converter; determine, based on the plurality of electrical measurements, an adjusted electrical characteristic for load line regulation of the sigma converter; and provide, based on the adjusted electrical characteristic, gating signals to the buck converter to perform the load line regulation of the sigma converter.

Abstract: An insulated gate field effect transistor (IGFET) based converter circuit is described that includes a direct current input comprising a high voltage input and a low voltage input, an IGFET gate input, and an equivalent phase leg comprising a plurality of parallel-connected cells. The parallel-connected cells each include: a first wide bandgap IGFET having a first drain electrode connected to the high voltage input, a first gate electrode connected to a first gate control input, and a first source electrode; a second wide bandgap IGFET having a second drain electrode connected to the first source electrode, a second gate electrode connected to a second gate control input, and a second source electrode connected to the low voltage input; and a step-inducing inductor coupled to: the first source electrode of the first wide bandgap IGFET, and an output node. The step-inducing inductor is connected to the output node.

Abstract: A gate driver circuit is provided that includes a turn-on path, a turn-off path, and a fast discharge path. The turn-on path is couplable between a gate of a solid-state switch and a voltage turn-on signal (VGON) from a gate driver, where the turn-on path defines a turn-on time for the solid-state switch. The turn-off path is couplable between the gate and a voltage turn-off signal (VGOFF) from the gate driver, where the turn-off path defines a turn-off time for the solid-state switch. The fast discharge path is selectively couplable in parallel with the turn-off path during a portion of a gate-to-source voltage (VGS) transition for the solid-state switch, where the turn-off path in parallel with the fast discharge path defines a turn-off delay for the solid-state switch and each of the turn-on time, the turn-off time, and the turn-off delay are independently configurable.

Abstract: An insulated gate field effect transistor (IGFET) based converter circuit is described that includes a direct current input comprising a high voltage input and a low voltage input, an IGFET gate input, and an equivalent phase leg comprising a plurality of parallel-connected cells. The parallel-connected cells each include: a first wide bandgap IGFET having a first drain electrode connected to the high voltage input, a first gate electrode connected to a first gate control input, and a first source electrode; a second wide bandgap IGFET having a second drain electrode connected to the first source electrode, a second gate electrode connected to a second gate control input, and a second source electrode connected to the low voltage input; and a step-inducing inductor coupled to: the first source electrode of the first wide bandgap IGFET, and an output node. The step-inducing inductor is connected to the output node.

Abstract: An overcurrent fault detector using a High Electron Mobility Transistor (HEMT) operated by a gate driver is disclosed. The overcurrent fault detector includes a band-pass filter and a control circuit. The band-pass filter is configured to receive gate-to-source voltage (VGS) signals of the HEMT and filter the VGS signals to generate a band-limited version of the VGS signals. The control circuit is configured to measure a value of the band-limited version of the VGS signals, determine if the value is greater than a threshold value, and generate a fault signal that disables the gate driver and terminates an overcurrent fault condition in response to determining that the value is greater than the threshold value.

Abstract: A bi-directional switch for an inductive machine is described. The bi-directional switch may include a first power semiconductor transistor with a first source, a first drain, and a first gate. The bi-directional switch may further include a second power semiconductor transistor with a second source, a second drain, and a second gate. The bi-directional switch may include the second source connected to the first source. The bi-directional switch may include a soft-starter device including a control circuit configurable to provide a first control signal to the first power semiconductor transistor and a second control signal to the second power semiconductor transistor.

Abstract: A system for providing bi-directional power flow and power conditioning for high-voltage applications. The system including a normally-off four-quadrant power electronic switch having two gates and two normally-on junction field-effect transistor. The normally-off four-quadrant power electronic switch and the two normally-on junction field-effect transistors are coupled to one another in a bi-cascode configuration.

Abstract: A system for providing bi-directional power flow and power conditioning for high-voltage applications. The system including a normally-off four-quadrant power electronic switch having two gates and two normally-on junction field-effect transistor. The normally-off four-quadrant power electronic switch and the two two normally-on junction field-effect transistors are coupled to one another in a bi-cascode configuration.

Abstract: Systems, methods, techniques and apparatuses of power switch control are disclosed. One exemplary embodiment is a power switch comprising a thyristor-based branch including a thyristor device; a FET-based branch coupled in parallel with the thyristor-based branch and including a FET device; and a controller. The controller is structured to turn on the FET device, turn on the thyristor device after turning on the FET device based on a thyristor voltage threshold, and update the thyristor voltage threshold based on a voltage measurement corresponding to the thyristor-based branch measured while the thyristor device is turned on.