Patents by Inventor Uttam Singisetti

Uttam Singisetti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-volatile latch using magneto-electric and ferro-electric tunnel junctions
    Patent number: 9368208
    Abstract: A non-volatile memory circuit includes an SRAM cell with magnetoelectric or ferroelectric structures for maintaining data within the SRAM cell even with power off. In some implementations, the magnetoelectric and ferroelectric structures can be programmed using a NOR or tristate gate coupled to an internal state of the SRAM cell. In other implementations, the magnetoelectric and ferroelectric structures can be configured as programmable resistors in the cross-coupled signal path of the SRAM inverters.
    Type: Grant
    Filed: April 20, 2015
    Date of Patent: June 14, 2016
    Assignees: Board of Regents, The University of Texas System, The Research Foundation For The State University of New York University At Buffalo, Intel Corporation
    Inventors: Andrew Marshall, Jonathan P. Bird, Uttam Singisetti, Dmitri E. Nikonov