Abstract: A semiconductor diode includes a semiconductor body, having a first main area formed from an inner area, on which a first contact layer is arranged, and from an edge area, a current path from the first contact layer to a second contact layer arranged on a second main area situated opposite the first main area, wherein the semiconductor diode, by virtue of the configuration of the first contact layer or of the semiconductor body, is formed such that upon current flow, such current flows through a current path having the greatest heating per unit volume, and which proceeds from a further partial area of the inner area, wherein the further partial area is arranged on the other side of a boundary of an inner partial area of the inner area, said inner partial area preferably being arranged centrally, with respect to an outer partial area adjoining said inner partial area.

Abstract: A semiconductor diode includes a semiconductor body, having a first main area formed from an inner area, on which a first contact layer is arranged, and from an edge area, a current path from the first contact layer to a second contact layer arranged on a second main area situated opposite the first main area, wherein the semiconductor diode, by virtue of the configuration of the first contact layer or of the semiconductor body, is formed such that upon current flow, such current flows through a current path having the greatest heating per unit volume, and which proceeds from a further partial area of the inner area, wherein the further partial area is arranged on the other side of a boundary of an inner partial area of the inner area, said inner partial area preferably being arranged centrally, with respect to an outer partial area adjoining said inner partial area.

Abstract: The invention relates to navigation systems for motor vehicles, in which route planning information is output via a monitor (3). Data records containing map data are stored in a storage element (5). According to the invention, the storage element (5) stores information regarding traffic restrictions which is part of a data record of the map data, and the traffic restrictions relevant to the ascertained vehicle position can additionally be displayed on the monitor (3). Furthermore, in one specific embodiment, time restrictions for traffic restrictions are likewise stored and only the traffic restrictions which are applicable at the present time are displayed.

Abstract: A semiconductor component has a cavity formed in a monocrystalline silicon substrate. The wall of the cavity is covered by a cover layer, at least in an upper collar region, and a covering layer is then applied to the surface of the silicon substrate using a selective epitaxial growth method. The cavity is thereby covered in the process. The method is physically simple and can be carried out cost-effectively. In particular, the described method can be used in order to cover a trench prior to high-temperature processes during the production of a DRAM memory, and to open the trench once again after the high-temperature processes, in order to provide a trench capacitor.

Abstract: A method for producing antifuse structures and antifuses by which adjacent conductive regions can be selectively electrically connected involve the application of a sacrificial layer to a first conductive region. The sacrificial layer is patterned with the aid of a photolithographic method. A fuse layer is applied and the sacrificial layer is then removed. A non-conductive layer is applied and a conductive material is introduced in an opening in the non-conductive layer for the purpose of forming a second conductive region.

Abstract: A process for fabricating a semiconductor component includes providing a trench in a substrate and depositing a liner layer on the resulting structure using a nonconformal deposition process. This results in the liner layer being significantly smaller at the trench walls and base than on the substrate surface. An insulating layer is provided on the resulting structure by a conformal deposition process. The insulating layer is then anisotropically etched to remove the insulating layer from a region of the trench base.

Abstract: A method for producing antifuse structures and antifuses by which adjacent conductive regions can be selectively electrically connected involve the application of a sacrificial layer to a first conductive region. The sacrificial layer is patterned with the aid of a photolithographic method. A fuse layer is applied and the sacrificial layer is then removed. A non-conductive layer is applied and a conductive material is introduced in an opening in the non-conductive layer for the purpose of forming a second conductive region.

Abstract: A semiconductor component has a cavity formed in a monocrystalline silicon substrate. The wall of the cavity is covered by a cover layer, at least in an upper collar region, and a covering layer is then applied to the surface of the silicon substrate using a selective epitaxial growth method. The cavity is thereby covered in the process. The method is physically simple and can be carried out cost-effectively. In particular, the described method can be used in order to cover a trench prior to high-temperature processes during the production of a DRAM memory, and to open the trench once again after the high-temperature processes, in order to provide a trench capacitor.

Abstract: A method for the shrink-hole-free filling of trenches in semiconductor circuits which utilizes selective growth of a layer to be applied is described. In the method, a layer of a selective growing material is applied simultaneously to a growth-promoting layer and to a growth-inhibiting layer. Wherein raised portions which, before the layer of selective growing material is applied, are covered by the growth-inhibiting layer at least on their sides. After the growth-inhibiting layer has been applied, the growth-promoting layer is generated by anisotropic treatment on surfaces parallel to the substrate on and between the raised portions and the layer is then removed again on surfaces parallel to the substrate on the raised portions. The method makes it possible to produce in a particularly simple manner a pattern on the raised portions of which are covered by the growth-inhibiting layer on their sides and on their top whereas the bottom of trenches is covered with a growth-promoting layer.

Abstract: The present invention provides a process for fabricating a semiconductor component, comprising the following steps: providing a trench (15) in a substrate (1); depositing a liner layer (8) on the resulting structure using a nonconformal deposition process, so that the thicknesses (dL1, d L3) of the liner layer (8) on the trench walls and on the trench base are significantly smaller than the thickness (dL2) of the liner layer (8) on the substrate surface; providing a layer (10) of an insulating material on the resulting structure by means of a conformal deposition process; and anisotropic etching of the layer (10) of the insulating material in order to remove the layer (10) from a region of the trench base. The invention also provides a corresponding semiconductor component.

Abstract: The invention relates to a device for supporting objects (1) so as to be rotatable about an axis of rotation (2), particularly, display devices in motor vehicles.The object of realizing such a device which is simple and cheap and which enables the object to be removed simply and rapidly, is achieved in that there has been provided a basic body (4) having a recess (14) which is open in a radialdirection, there has been provided a rotary body (3) adapted to be slid into the recess (14) in a radial direction and to be rotatable in the recess (14),there has been provided a locking bracket (9) by means of which the rotary body (3) can be locked against radial movement in the recess (14), andthe rotary body (3) can be locked in rotation to the object (1) in such a manner that the rotary body (3) is rotated when the object (1) is rotated in the basic body (4).