Patents by Inventor Uwe Schroder
Uwe Schroder has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10600808Abstract: An integrated circuit comprises a ferroelectric memory cell including an oxide storage layer, an electrode layer, and an interface layer. The oxide storage layer comprises a ferroelectric material that is at least partially in a ferroelectric state. The ferroelectric material comprises, as main components, oxygen and any of the group consisting of Hf, Zr and (Hf,Zr). The interface layer is disposed between the oxide storage layer and the electrode layer and includes at least one element with a higher valence value than Hf or Zr.Type: GrantFiled: September 5, 2017Date of Patent: March 24, 2020Assignee: NaMLab gGmbHInventor: Uwe Schröder
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Publication number: 20190074295Abstract: An integrated circuit comprises a ferroelectric memory cell including an oxide storage layer, an electrode layer, and an interface layer. The oxide storage layer comprises a ferroelectric material that is at least partially in a ferroelectric state. The ferroelectric material comprises, as main components, oxygen and any of the group consisting of Hf, Zr and (Hf,Zr). The interface layer is disposed between the oxide storage layer and the electrode layer and includes at least one element with a higher valence value than Hf or Zr.Type: ApplicationFiled: September 5, 2017Publication date: March 7, 2019Inventor: Uwe SCHRÖDER
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Patent number: 10056393Abstract: Integrated devices comprising pinched hysteresis loop (PHL) materials in a capacitor or a transistor stack are disclosed. PHL materials include field induced ferroelectrics (FFE), anti-ferroelectric (AFE) and relaxor type ferroelectric (RFE) materials. Each integrated device includes a material stack with a PHL material layer disposed between two electrodes. Application of this material is dependent on inducing of an electric field bias over the stack. According to one option, electrodes having different workfunction values can be employed to induce the required built-in bias field and enable use of PHL materials. According to another option, a PHL material and charges, e.g., a charge interlayer, are disposed between two electrodes such that an induced built-in bias field appears. Integrated devices employing the PHL material stack include memories, transistors, and piezo- and pyroelectric devices.Type: GrantFiled: March 1, 2016Date of Patent: August 21, 2018Assignee: NaMLab gGmbHInventors: Uwe Schröder, Milan Pe{hacek over (s)}ić
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Publication number: 20170362615Abstract: The invention relates to a method for preparing organic compounds with recovery of product liquids, which comprise short-chain and medium length-chain carboxylic acids having a chain length of from 2 to 16 carbon atoms, by anaerobic fermentation of biomass with mixed microorganism cultures with suppression of methane formation and by electrolytic treatment of these product liquids containing the carboxylic acids with a constant or varying oxidation flow for the recovery and isolation of the target compounds.Type: ApplicationFiled: July 10, 2015Publication date: December 21, 2017Inventors: Falk HARNISCH, Luis Felipe MORGADO ROSA, Heike STRAUBER, Sabine KLEINSTEUBER,, Michael DITTRICH-ZECHENDORF, Tatiane Regina DOS SANTOS, Uwe SCHRODER
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Publication number: 20170256552Abstract: Integrated devices comprising pinched hysteresis loop (PHL) materials in a capacitor or a transistor stack are disclosed. PHL materials include field induced ferroelectrics (FFE), anti-ferroelectric (AFE) and relaxor type ferroelectric (RFE) materials. Each integrated device includes a material stack with a PHL material layer disposed between two electrodes. Application of this material is dependent on inducing of an electric field bias over the stack. According to one option, electrodes having different workfunction values can be employed to induce the required built-in bias field and enable use of PHL materials. According to another option, a PHL material and charges, e.g., a charge interlayer, are disposed between two electrodes such that an induced built-in bias field appears. Integrated devices employing the PHL material stack include memories, transistors, and piezo- and pyroelectric devices.Type: ApplicationFiled: March 1, 2016Publication date: September 7, 2017Inventors: Uwe SCHRÖDER, Milan PESIC
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Patent number: 9053802Abstract: An integrated circuit includes a ferroelectric memory cell. In one embodiment, the ferroelectric memory cell includes a first oxide storage layer, a second oxide storage layer, and an amorphous layer disposed between the first and second oxide storage layers. Each of the first and second oxide storage layers includes a ferroelectric material that is at least partially in a ferroelectric state and further includes, as main components, oxygen and any of the group consisting of Hf, Zr and (Hf,Zr).Type: GrantFiled: June 4, 2013Date of Patent: June 9, 2015Assignee: NaMLab gGmbHInventors: Stefan Ferdinand Müller, Ekaterina Yurchuk, Uwe Schröder
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Publication number: 20140355328Abstract: An integrated circuit includes a ferroelectric memory cell. In one embodiment, the ferroelectric memory cell includes a first oxide storage layer, a second oxide storage layer, and an amorphous layer disposed between the first and second oxide storage layers. Each of the first and second oxide storage layers includes a ferroelectric material that is at least partially in a ferroelectric state and further includes, as main components, oxygen and any of the group consisting of Hf, Zr and (Hf,Zr).Type: ApplicationFiled: June 4, 2013Publication date: December 4, 2014Inventors: Stefan Ferdinand Müller, Ekaterina Yurchuk, Uwe Schröder
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Patent number: 7709359Abstract: A method of fabricating an integrated circuit with a dielectric layer on a substrate is disclosed. One embodiment provides forming the dielectric layer in an amorphous state on the substrate, the dielectric layer having a crystallization temperature; a doping the dielectric layer; a forming of a covering layer on the dielectric layer at a temperature being equal to or below the crystallization temperature; and a heating of the dielectric layer to a temperature being equal to or greater than the crystallization temperature.Type: GrantFiled: September 5, 2007Date of Patent: May 4, 2010Assignee: Qimonda AGInventors: Tim Boescke, Johannes Heitmann, Uwe Schroder
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Publication number: 20090057737Abstract: A method of fabricating an integrated circuit with a dielectric layer on a substrate is disclosed. One embodiment provides forming the dielectric layer in an amorphous state on the substrate, the dielectric layer having a crystallization temperature; a doping the dielectric layer; a forming of a covering layer on the dielectric layer at a temperature being equal to or below the crystallization temperature; and a heating of the dielectric layer to a temperature being equal to or greater than the crystallization temperature.Type: ApplicationFiled: September 5, 2007Publication date: March 5, 2009Applicant: QIMONDA AGInventors: Tim Boescke, Johannes Heitmann, Uwe Schroder
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Patent number: 7358187Abstract: The present invention provides a coating process for patterned substrate surfaces, in which a substrate (101) is provided, the substrate having a surface (105) which is patterned in a substrate patterning region (102) and has one or more trenches (106) that are to be filled to a predetermined filling height (205), a catalyst layer (201) is introduced into the trenches (106) that are to be filled, a reaction layer (202) is deposited catalytically in the trenches (106) that are to be filled, the catalytically deposited reaction layer (202) is densified in the trenches (106) that are to be filled, and the introduction of the catalyst layer (201) and the catalytic deposition of the reaction layer (202) are repeated until the trenches (106) that are to be filled have been filled to the predetermined filling height (205).Type: GrantFiled: June 8, 2005Date of Patent: April 15, 2008Assignee: Infineon Technologies AGInventors: Thomas Hecht, Stefan Jakschik, Uwe Schröder
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Patent number: 7344953Abstract: On a substrate surface, which has been patterned in the form of a relief, of a substrate, typically of a semiconductor wafer, a deposition process is used to provide a covering layer on process surfaces which are vertical or inclined with respect to the substrate surface. The covering layer is patterned in a direction which is vertical with respect to the substrate surface by limiting a process quantity of at least one precursor material and/or by temporarily limiting the deposition process, and is formed as a functional layer or mask for subsequent process steps.Type: GrantFiled: January 26, 2005Date of Patent: March 18, 2008Assignee: Infineon Technologies, AGInventors: Thomas Hecht, Matthias Goldbach, Uwe Schröder
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Patent number: 7307735Abstract: The present invention relates to a method for determining the depth of a buried structure in a semiconductor wafer. According to the invention, the layer behavior of the semiconductor wafer which is brought about by the buried structure when the semiconductor wafer is irradiated with electromagnetic radiation in the infrared range and arises as a result of the significantly longer wavelengths of the radiation used in comparison with the lateral dimensions of the buried structure is utilized to determine the depth of the buried structure by spectrometric and/or ellipsometric methods.Type: GrantFiled: April 30, 2004Date of Patent: December 11, 2007Assignee: Infineon Technologies AGInventors: Thomas Hecht, Uwe Schröder, Ulrich Mantz, Stefan Jakschik, Andreas Orth
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Publication number: 20070210367Abstract: A storage capacitor includes a first electrode layer, second electrode layer and a dielectric interlayer arranged between the first electrode layer and the second electrode layer. The dielectric interlayer contains a high-k dielectric and at least one silicon-containing component.Type: ApplicationFiled: November 30, 2006Publication date: September 13, 2007Applicant: QIMONDA AGInventors: Henry Bernhardt, Thomas Hecht, Michael Stadtmueller, Christian Kapteyn, Uwe Schroder, Yeong-Kwan Kim, Andreas Spitzer
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Patent number: 7268037Abstract: A process for modifying sections of a semiconductor includes covering the sections to remain free of doping with a metal oxide, e.g., aluminum oxide. Then, the semiconductor is doped, for example, from the gas phase, in those sections that are not covered by the aluminum oxide. Finally, the aluminum oxide is selectively removed again, for example using hot phosphoric acid. Sections of the semiconductor surface which are formed from silicon, silicon oxide or silicon nitride remain in place on the wafer.Type: GrantFiled: January 24, 2005Date of Patent: September 11, 2007Assignee: Infineon Technologies, AGInventors: Stefan Jakschik, Thomas Hecht, Uwe Schröder, Matthias Goldbach
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Patent number: 7176514Abstract: A method for producing a dielectric layer on a substrate made of a conductive substrate material includes reducing a leakage current that flows through defects of the dielectric layer at least by a self-aligning and self-limiting electrochemical conversion of the conductive substrate material into a nonconductive substrate follow-up material in sections of the substrate that are adjacent to the defects. Also provided is a configuration including a dielectric layer with defects, a substrate made of a conductive substrate material, and reinforcement regions made of the nonconductive substrate follow-up material in sections adjacent to the defects.Type: GrantFiled: April 15, 2003Date of Patent: February 13, 2007Assignee: Infineon Technologies AGInventors: Thomas Hecht, Albert Birner, Harald Seidl, Uwe Schröder, Stefan Jakschik, Martin Gutsche
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Publication number: 20060275981Abstract: Memory and method for fabricating it A memory formed as an integrated circuit in a semiconductor substrate and having storage capacitors and switching transistors. The storage capacitors are formed in the semiconductor substrate in a trench and have an outer electrode layer, which is formed around the trench, a dielectric intermediate layer, which is embodied on the trench wall, and an inner electrode layer, with which the trench is essentially filled, and the switching transistors are formed in the semiconductor substrate in a surface region and have a first source/drain doping region, a second source/drain doping region and an intervening channel, which is separated from a gate electrode by an insulator layer.Type: ApplicationFiled: May 30, 2006Publication date: December 7, 2006Applicant: INFINEON TECHNOLOGIES AGInventors: Alejandro Avellan, Matthias Goldbach, Thomas Hecht, Stefan Jakschik, Andreas Orth, Uwe Schroder, Michael Stadtmueller, Olaf Storbeck
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Publication number: 20060110903Abstract: In order to form a contact in a layer on a substrate, in particular a contact in a logic circuit in a semiconductor component, the mask layer is structured for etching of the contact holes with a photoresist layer which is exposed using two masks, with the first mask containing a regular pattern of contact structures with a period which corresponds to the order of magnitude of twice the edge length of the contact hole, and with the second mask containing a pattern with a structure which surrounds at least the contact hole area, and thus covers it.Type: ApplicationFiled: November 15, 2005Publication date: May 25, 2006Applicant: INFINEON TECHNOLOGIES AGInventors: Uwe Schroder, Jochen Schacht
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Publication number: 20050277295Abstract: The present invention provides a coating process for patterned substrate surfaces, in which a substrate (101) is provided, the substrate having a surface (105) which is patterned in a substrate patterning region (102) and has one or more trenches (106) that are to be filled to a predetermined filling height (205), a catalyst layer (201) is introduced into the trenches (106) that are to be filled, a reaction layer (202) is deposited catalytically in the trenches (106) that are to be filled, the catalytically deposited reaction layer (202) is densified in the trenches (106) that are to be filled, and the introduction of the catalyst layer (201) and the catalytic deposition of the reaction layer (202) are repeated until the trenches (106) that are to be filled have been filled to the predetermined filling height (205).Type: ApplicationFiled: June 8, 2005Publication date: December 15, 2005Inventors: Thomas Hecht, Stefan Jakschik, Uwe Schroder
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Patent number: 6953722Abstract: In a method for forming patterned ceramic layers, a ceramic material is deposited on a substrate and is subsequently densified by heat treatment, for example. In this case, the initially amorphous material is converted into a crystalline or polycrystalline form. In order that the now crystalline material can be removed again from the substrate, imperfections are produced in the ceramic material, for example by ion implantation. As a result, the etching medium can more easily attack the ceramic material, so that the latter can be removed with a higher etching rate. Through inclined implantation, the method can be performed in a self-aligning manner and the ceramic material can be removed on one side, by way of example, in trenches or deep trench capacitors.Type: GrantFiled: April 29, 2003Date of Patent: October 11, 2005Assignee: Infineon Technologies AGInventors: Harald Seidl, Martin Gutsche, Thomas Hecht, Stefan Jakschik, Stephan Kudelka, Uwe Schröder, Matthias Schmeide
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Publication number: 20050181557Abstract: A process for modifying sections of a semiconductor includes covering the sections to remain free of doping with a metal oxide, e.g., aluminum oxide. Then, the semiconductor is doped, for example, from the gas phase, in those sections that are not covered by the aluminum oxide. Finally, the aluminum oxide is selectively removed again, for example using hot phosphoric acid. Sections of the semiconductor surface which are formed from silicon, silicon oxide or silicon nitride remain in place on the wafer.Type: ApplicationFiled: January 24, 2005Publication date: August 18, 2005Inventors: Stefan Jakschik, Thomas Hecht, Uwe Schroder, Matthias Goldbach