Abstract: A charge-coupled device image sensor includes a substrate, a buried channel region of a first conductivity type, formed in the substrate to a predetermined depth, for transferring signal charges, a first high concentration impurity region of a second conductivity type, formed in the substrate adjacent to the buried channel region, forming a channel stop, a first surface channel region of the second conductivity type, formed on the buried channel region, for transferring dark current charges, a second high concentration impurity region of the first conductivity type, formed on the first high concentration impurity region, for removing dark current charges from the surface channel region, and a second surface channel region of the second conductivity type formed to a predetermined depth in the substrate between the second high concentration impurity region and the first surface channel region.

Abstract: A CCD-solid state image sensor includes a sensing area for generating signal charges in response to incident light, a storage area for storing the signal charges from the sensing area, an HCCD (Horizontal Charge Coupled Device) for extracting the signal charges stored in the storage area, a high sensitivity signal charge detection and amplification circuit for detecting and amplifying signal charges of electrons from the HCCD, and a low sensitivity signal charge detection and amplification circuit for detecting and amplifying signal charges of holes from the HCCD.

Abstract: A method for manufacturing a silicon semiconductor device with a high contamination sensitivity to heavy metals, such as Si-CCD solid state image sensors, wherein a gettering site is formed in an element isolation region present near an element region or the like, a non-depleted n.sup.+ or p.sup.+ region, a region to be removed or isolated from the surface of a semiconductor substrate in a subsequent process. This method makes it possible to form semiconductor devices while reducing the contamination of silicon substrate surfaces by heavy metals. The method also realizes the manufacture of silicon semiconductor devices exhibiting a stable device characteristic and having reduced defects.

Abstract: A charge transfer device and a solid state image sensor using the same, capable of transferring signal charge at a high signal to noise ratio (S/N ratio) and preventing an occurrence of dark current. They include a double-layered charge transfer path structure provided by forming a surface channel region on a buried channel region formed in a semiconductor substrate, the surface channel region having a conductivity opposite to that of the buried channel region. The surface channel region of the doubled-layered structure is used for accumulating dark current generated from boundary surfaces between the substrate and a gate insulating film, whereas the buried channel region is used for transferring optical signal charge. Where minus and/or plus drive voltages are applied to the transfer electrodes, there is no increase in dark current, in accordance with the present invention. The quantity of transferred signal charge can be greatly increased.

Abstract: A charge detecting device in which a buried type charge sensing channel and a surface type floating surface channel crossing with the charge sensing channel in three-dimensional, the floating surface channel having a surface potential varying depending on a charge amount of the charge sensing channel, the device being characterized by a surface channel region disposed on the charge sensing channel, surface channel the region having a conductivity opposite to that of the charge sensing channel. A surface-invertible buried channel isolation region is disposed between the charge sensing channel and each of a source and a drain both formed on either side of the floating surface channel. Carriers of the floating surface channel and the charge sensing channel correspond to electrons of the same polarity. With this structure, there is no problem of dark current. Also, a short noise caused by dark noise is reduced, thereby enabling a high sensitivity to be obtained.

Abstract: A method of making a charge coupled device image sensor comprising forming n.sup.+ type impurity regions for light receiving element and charge transfer element over a p type well of a n type substrate, forming an oxide film for insulating a gate over the substrate, forming a nitride film over the oxide film, the nitride film serving as an etch stopper, forming an insulating film such as a LTO film or BPSG film, forming a p.sup.+ type third impurity region in the p type well, forming an electrode over the third impurity region, and forming a PECVD LTO film. The PECVD LTO film and insulating film are removed by a wet etching method or a CDE method, so as to expose partially the nitride film. The wet etching is carried out under the condition that the nitride film is used as an etch stopper, thereby capable of solving the problem of a damage of substrate caused by a dry etching and thus avoiding generations of dark current and white defect.

Abstract: A method of making a charge transfer device, capable of forming a plurality of transfer electrodes, using a single conductive layer, with a narrow transfer electrode gap enough to achieve a high transfer efficiency. The method comprises forming an impurity layer of a second conductivity type, a first insulating layer and a semiconductor layer in this order, over a first conductivity type semiconductor substrate, forming spaced semiconductor layer patterns, forming a second insulating layer over the resultant entire exposed surface and implanting impurity ions of the first conductivity type in the second conductivity type impurity layer so as to form spaced impurity layers of the first conductivity type, and forming a third insulating layer over the resultant entire exposed surface and etching back the third insulating layer to the semiconductor layer patterns.