Patents by Inventor Valerie L. Lines
Valerie L. Lines has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120320695Abstract: A system includes a voltage generator to produce a pre-charge voltage signal for pre-charging one or more signals in a memory circuit. The one or more signals can be data bus lines used to access memory. The voltage generator can include an input indicating whether the memory circuit is set to a power-saving mode. According to one embodiment, the input adjusts a magnitude of the pre-charge voltage signal produced by the voltage generator. Such an embodiment is useful over conventional methods because adjusting the pre-charge voltage can result in power savings. As an example, when in the power-saving mode, the voltage generator circuit can adjust the pre-charge voltage to a value that reduces an amount of leakage current associated with a pre-charge voltage. Reducing the leakage with respect to the pre-charge voltage means that the saved power can be used for other useful purposes.Type: ApplicationFiled: August 30, 2012Publication date: December 20, 2012Applicant: MOSAID TECHNOLOGIES INCORPORATEDInventors: Valerie L. Lines, HakJune OH
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Patent number: 8279685Abstract: A system includes a voltage generator to produce a pre-charge voltage signal for pre-charging one or more signals in a memory circuit. The one or more signals can be data bus lines used to access memory. The voltage generator can include an input indicating whether the memory circuit is set to a power-saving mode. The input adjusts a magnitude of the pre-charge voltage signal produced by the voltage generator. Adjusting the pre-charge voltage can result in power savings. When in the power-saving mode, the voltage generator circuit can adjust the pre-charge voltage to a value that reduces an amount of leakage current associated with a pre-charge voltage. Reducing the leakage with respect to the pre-charge voltage means that the saved power can be used for other useful purposes.Type: GrantFiled: February 1, 2011Date of Patent: October 2, 2012Assignee: Mosaid Technologies IncorporatedInventors: Valerie L. Lines, HakJune Oh
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Patent number: 8149634Abstract: A memory architecture and circuits for minimizing current leakage in the memory array. Subdivisions of the memory array each have local power grids that can be selectively connected to power supplies, such that only an accessed subdivision will receive power to execute the memory access operation. The memory array can further include databuses which are precharged to one voltage during idle times and a second voltage during active read cycles, which reduces leakage current in datapath circuitry connected to the databuses within the memory array blocks.Type: GrantFiled: May 22, 2009Date of Patent: April 3, 2012Assignee: Mosaid Technologies IncorporatedInventor: Valerie L. Lines
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Patent number: 8023314Abstract: A circuit which accurately controls the word line (pass transistor gate) driving voltage to a voltage which is both controlled and is not significantly greater than is needed to drive the word line. The circuit eliminates the need for a double-boot-strapping circuit, and ensures that no voltages exceed that necessary to fully turn on a memory cell access transistor. Voltages in excess of that which would reduce reliability are avoided, and accurate driving voltages are obtained. A DRAM includes word lines, memory cells having enable inputs connected to the word lines, a gate receiving word line selecting signals at first logic levels Vss and Vdd, and for providing a select signal at levels Vss and Vdd, a high voltage supply source Vpp which is higher in voltage than Vdd, a circuit for translating the select signals at levels Vss and Vdd to levels Vss and Vpp and for applying it directly to the word lines whereby an above Vdd voltage level word line is achieved without the use of double boot-strap circuits.Type: GrantFiled: March 16, 2009Date of Patent: September 20, 2011Assignee: MOSAID Technologies IncorporatedInventor: Valerie L. Lines
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Publication number: 20110122719Abstract: A system includes a voltage generator to produce a pre-charge voltage signal for pre-charging one or more signals in a memory circuit. The one or more signals can be data bus lines used to access memory. The voltage generator can include an input indicating whether the memory circuit is set to a power-saving mode. According to one embodiment, the input adjusts a magnitude of the pre-charge voltage signal produced by the voltage generator. Such an embodiment is useful over conventional methods because adjusting the pre-charge voltage can result in power savings. As an example, when in the power-saving mode, the voltage generator circuit can adjust the pre-charge voltage to a value that reduces an amount of leakage current associated with a pre-charge voltage. Reducing the leakage with respect to the pre-charge voltage means that the saved power can be used for other useful purposes.Type: ApplicationFiled: February 1, 2011Publication date: May 26, 2011Inventors: Valerie L. Lines, HakJune Oh
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Patent number: 7903477Abstract: A system includes a voltage generator to produce a pre-charge voltage signal for pre-charging one or more signals in a memory circuit. The one or more signals can be data bus lines used to access memory. The voltage generator can include an input indicating whether the memory circuit is set to a power-saving mode. The input can be used to determine whether to adjust a magnitude of the pre-charge voltage signal produced by the voltage generator. Adjusting the pre-charge voltage can result in power savings. That is, when in the power-saving mode, the voltage generator circuit can adjust the pre-charge voltage to a value that reduces an amount of leakage current associated with a pre-charge voltage. Reducing the leakage with respect to the pre-charge voltage means that the saved power can be used for other useful purposes.Type: GrantFiled: July 28, 2008Date of Patent: March 8, 2011Assignee: Mosaid Technologies IncorporatedInventors: Valerie L. Lines, HakJune Oh
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Publication number: 20090237981Abstract: A circuit which accurately controls the word line (pass transistor gate) driving voltage to a voltage which is both controlled and is not significantly greater than is needed to drive the word line. The circuit eliminates the need for a double-boot-strapping circuit, and ensures that no voltages exceed that necessary to fully turn on a memory cell access transistor. Voltages in excess of that which would reduce reliability are avoided, and accurate driving voltages are obtained. A DRAM includes word lines, memory cells having enable inputs connected to the word lines, a gate receiving word line selecting signals at first logic levels Vss and Vdd, and for providing a select signal at levels Vss and Vdd, a high voltage supply source Vpp which is higher in voltage than Vdd, a circuit for translating the select signals at levels Vss and Vdd to levels Vss and Vpp and for applying it directly to the word lines whereby an above Vdd voltage level word line is achieved without the use of double boot-strap circuits.Type: ApplicationFiled: March 16, 2009Publication date: September 24, 2009Inventor: Valerie L. Lines
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Publication number: 20090231931Abstract: A memory architecture and circuits for minimizing current leakage in the memory array. Subdivisions of the memory array each have local power grids that can be selectively connected to power supplies, such that only an accessed subdivision will receive power to execute the memory access operation. The memory array can further include databuses which are precharged to one voltage during idle times and a second voltage during active read cycles, which reduces leakage current in datapath circuitry connected to the databuses within the memory array blocks.Type: ApplicationFiled: May 22, 2009Publication date: September 17, 2009Applicant: MOSAID TECHNOLOGIES INCORPORATEDInventor: Valerie L. LINES
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Publication number: 20090219767Abstract: A system includes a voltage generator to produce a pre-charge voltage signal for pre-charging one or more signals in a memory circuit. The one or more signals can be data bus lines used to access memory. The voltage generator can include an input indicating whether the memory circuit is set to a power-saving mode. According to one embodiment, the input adjusts a magnitude of the pre-charge voltage signal produced by the voltage generator. Such an embodiment is useful over conventional methods because adjusting the pre-charge voltage can result in power savings. As an example, when in the power-saving mode, the voltage generator circuit can adjust the pre-charge voltage to a value that reduces an amount of leakage current associated with a pre-charge voltage. Reducing the leakage with respect to the pre-charge voltage means that the saved power can be used for other useful purposes.Type: ApplicationFiled: July 28, 2008Publication date: September 3, 2009Inventors: Valerie L. Lines, HakJune Oh
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Patent number: 7555659Abstract: A memory architecture and circuits for minimizing current leakage in the memory array. Subdivisions of the memory array each have local power grids that can be selectively connected to power supplies, such that only an accessed subdivision will receive power to execute the memory access operation. The memory array can further include databuses which are precharged to one voltage during idle times and a second voltage during active read cycles, which reduces leakage current in datapath circuitry connected to the databuses within the memory array blocks.Type: GrantFiled: February 28, 2006Date of Patent: June 30, 2009Assignee: Mosaid Technologies IncorporatedInventor: Valerie L. Lines
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Patent number: 7541837Abstract: A level shifter circuit for converting a logic signal with logic ‘1’ and ‘0’ levels at first high and low supply voltage levels to a signal with second high and low supply voltage levels. In particular, the second high and low supply voltage levels are greater than the first high and low supply voltage levels. The disclosed level shifter is configured such that the size of the preceding logic gate and circuitry within the level shifter can be reduced, facilitating its layout in pitch-limited areas. The level shifter also includes circuitry to decouple the output pull-up and pull-down paths to further facilitate state transitions and reduce crowbar current consumption.Type: GrantFiled: October 31, 2007Date of Patent: June 2, 2009Assignee: Mosaid Technologies IncorporatedInventor: Valerie L. Lines
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Patent number: 7535749Abstract: A circuit which accurately controls the word line (pass transistor gate) driving voltage to a voltage which is both controlled and is not significantly greater than is needed to drive the word line. The circuit eliminates the need for a double-boot-strapping circuit, and ensures that no voltages exceed that necessary to fully turn on a memory cell access transistor. Voltages in excess of that which would reduce reliability are avoided, and accurate driving voltages are obtained. A DRAM includes word lines, memory cells having enable inputs connected to the word lines, a gate receiving word line selecting signals at first logic levels Vss and Vdd, and for providing a select signal at levels Vss and Vdd, a high voltage supply source Vpp which is higher in voltage than Vdd, a circuit for translating the select signals at levels Vss and Vdd to levels Vss and Vpp and for applying it directly to the word lines whereby an above Vdd voltage level word line is achieved without the use of double boot-strap circuits.Type: GrantFiled: March 30, 2006Date of Patent: May 19, 2009Assignee: Mosaid Technologies, Inc.Inventor: Valerie L. Lines
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Patent number: 7312636Abstract: A level shifter circuit for converting a logic signal with logic ‘1’ and ‘0’ levels at first high and low supply voltage levels to a signal with second high and low supply voltage levels. In particular, the second high and low supply voltage levels are greater than the first high and low supply voltage levels. The disclosed level shifter is configured such that the size of the preceding logic gate and circuitry within the level shifter can be reduced, facilitating its layout in pitch-limited areas. The level shifter also includes circuitry to decouple the output pull-up and pull-down paths to further facilitate state transitions and reduce crowbar current consumption.Type: GrantFiled: February 6, 2006Date of Patent: December 25, 2007Assignee: Mosaid Technologies IncorporatedInventor: Valerie L. Lines
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Patent number: 7043601Abstract: A system and method for high speed generation of a global address corresponding to the highest priority active matchline sense output signal received after a CAM search-and-compare operation is disclosed. A priority encoder having blocks of multiple match resolver circuits arranged in a logical order of priority receives a plurality of active matchline sense output signals. Each block of multiple match resolver circuits generates a flag signal and a local address corresponding to the highest priority active matchline sense output signal received. Control logic receives flag signals from the multiple match resolver circuits, and identifies the highest priority multiple match resolver circuit that has received an active matchline sense output signal. The control logic then disables all lower priority multiple match resolver circuits such that only the local address generated by the highest priority multiple match resolver circuit is passed by the priority encoder.Type: GrantFiled: December 23, 2003Date of Patent: May 9, 2006Assignee: MOSAID Technologies IncorporatedInventors: Robert McKenzie, Valerie L. Lines
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Patent number: 7038937Abstract: A circuit which accurately controls the word line (pass transistor gate) driving voltage to a voltage which is both controlled and is not significantly greater than is needed to drive the word line. The circuit eliminates the need for a double-boot-strapping circuit, and ensures that no voltages exceed that necessary to fully turn on a memory cell access transistor. Voltages in excess of that which would reduce reliability are avoided, and accurate driving voltages are obtained. A DRAM includes word lines, memory cells having enable inputs connected to the word lines, a gate receiving word line selecting signals at first logic levels Vss and Vdd, and for providing a select signal at levels Vss and Vdd, a high voltage supply source Vpp which is higher in voltage than Vdd, a circuit for translating the select signals at levels Vss and Vdd to levels Vss and Vpp and for applying it directly to the word lines whereby an above Vdd voltage level word line is achieved without the use of double boot-strap circuits.Type: GrantFiled: March 2, 2004Date of Patent: May 2, 2006Assignee: Mosaid Technologies, Inc.Inventor: Valerie L. Lines
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Patent number: 6980448Abstract: A circuit for providing an output voltage for a DRAM word line which can be used to drive memory word lines which can be as high as 2Vdd. Transistors in a boosting circuit are fully switched, eliminating reduction of the boosting voltage by Vtn through the transistors. The boosting capacitors are charge by Vdd. A regulator detects conduction current of a replica of a memory cell access transistor, shutting off the boosting circuit clock oscillator when the correct voltage to operate the access transistor has been reached.Type: GrantFiled: June 17, 2003Date of Patent: December 27, 2005Assignee: MOSAID Technologies, Inc.Inventors: Richard C. Foss, Peter B. Gillingham, Robert F. Harland, Valerie L. Lines
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Publication number: 20040139275Abstract: A system and method for high speed generation of a global address corresponding to the highest priority active matchline sense output signal received after a CAM search-and-compare operation is disclosed. A priority encoder having blocks of multiple match resolver circuits arranged in a logical order of priority receives a plurality of active matchline sense output signals. Each block of multiple match resolver circuits generates a flag signal and a local address corresponding to the highest priority active matchline sense output signal received. Control logic receives flag signals from the multiple match resolver circuits, and identifies the highest priority multiple match resolver circuit that has received an active matchline sense output signal. The control logic then disables all lower priority multiple match resolver circuits such that only the local address generated by the highest priority multiple match resolver circuit is passed by the priority encoder.Type: ApplicationFiled: December 23, 2003Publication date: July 15, 2004Inventors: Robert McKenzie, Valerie L. Lines
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Publication number: 20040036456Abstract: A circuit for providing an output voltage for a DRAM word line which can be used to drive memory word lines which can be as high as 2Vdd. Transistors in a boosting circuit are fully switched, eliminating reduction of the boosting voltage by Vtn through the transistors. The boosting capacitors are charge by Vdd. A regulator detects conduction current of a replica of a memory cell access transistor, shutting off the boosting circuit clock oscillator when the correct voltage to operate the access transistor has been reached.Type: ApplicationFiled: June 17, 2003Publication date: February 26, 2004Applicant: MOSAID Technologies IncorporatedInventors: Richard C. Foss, Peter B. Gillingham, Robert F. Harland, Valerie L. Lines
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Publication number: 20040037155Abstract: A circuit which accurately controls the word line (pass transistor gate) driving voltage to a voltage which is both controlled and is not significantly greater than is needed to drive the word line. The elements of the present invention eliminate the need for a double-boot-strapping circuit, and ensure that no voltages exceed that necessary to fully turn on a memory cell access transistor. Accordingly, voltages in excess of that which would reduce reliability are avoided, and accurate driving voltages are obtained.Type: ApplicationFiled: June 17, 2003Publication date: February 26, 2004Applicant: MOSAID Technologies, IncorporatedInventor: Valerie L. Lines
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Patent number: 6693814Abstract: A system and method for high speed generation of a global address corresponding to the highest priority active matchline sense output signal received after a CAM search-and-compare operation is disclosed. A priority encoder having blocks of multiple match resolver circuits arranged in a logical order of priority receives a plurality of active matchline sense output signals. Each block of multiple match resolver circuits generates a flag signal and a local address corresponding to the highest priority active matchline sense output signal received. Control logic receives flag signals from the multiple match resolver circuits, and identifies the highest priority multiple match resolver circuit that has received an active matchline sense output signal. The control logic then disables all lower priority multiple match resolver circuits such that only the local address generated by the highest priority multiple match resolver circuit is passed by the priority encoder.Type: GrantFiled: September 18, 2001Date of Patent: February 17, 2004Assignee: Mosaid Technologies IncorporatedInventors: Robert McKenzie, Valerie L. Lines