Abstract: A laser system suitable for modification of a calcified blood vessel includes a laser source; a feedback controller configured to regulate a dosimetry of the laser source to produce spatially and/or temporally modulated laser light; a catheter comprising a first optical delivery element, the first optical delivery element configured to guide the modulated laser light to an in-vivo object in the blood vessel; and a detecting element, configured to detect one or more physical, chemical, mechanical and/or dimensional characteristics of an area of the in-vivo object in real-time, wherein the feedback controller is configured to process the real-time detected information pertaining to the one or more physical, chemical, mechanical and/or dimensional characteristics of the area in real-time, wherein the feedback controller is further configured to regulate the dosimetry of the laser source for a controlled formation of a porous structure and/or a zone of denaturized tissue in the in-vivo object.

Abstract: A ferroelectric nanoparticle capacitor-device comprises a pair of conductive elements electrically insulated from each other, and ferroelectric nanoparticles arranged between the conductive elements of the pair. The ferroelectric nanoparticles are adapted to provide at least three polarization states with different total ferroelectric polarizations.

Abstract: A ferroelectric nanoparticle capacitor-device comprises a pair of conductive elements electrically insulated from each other, and ferroelectric nanoparticles arranged between the conductive elements of the pair. The ferroelectric nanoparticles are adapted to provide at least three polarization states with different total ferroelectric polarizations.

Abstract: A laser system for changing an IOP of an eye includes a laser source; a feedback controller, configured to regulate a dosimetry of the laser source to produce spatially and/or temporally modulated laser light; a first optical delivery element, configured to guide the spatially and/or temporally modulated laser light to irradiate a first area on the eye; and a detecting element, configured to detect one or more physical, chemical, mechanical and/or structural characteristics in a second area on the eye in a real-time during the change of the IOP, wherein the feedback controller is configured to regulate the dosimetry of the laser source in a real-time based on the real-time detected information pertaining to the one or more physical, chemical, mechanical and/or structural characteristics in the second area.

Abstract: A laser system suitable for a treatment of a cartilage tissue in a joint includes a laser source; a feedback controller, configured to regulate a dosimetry of the laser source to produce spatially and/or temporally modulated laser light; a first optical delivery element, configured to guide the spatially and/or temporally modulated laser light to an area in the joint to irradiate a first part of the area; and a detecting element, configured to detect one or more physical, chemical, mechanical and/or structural characteristics in the area in a real-time; wherein the feedback controller is configured to regulate in a real-time the dosimetry of the laser source based on the real-time detected information pertaining to the one or more physical, chemical, mechanical and/or structural characteristics in the area for a controlled activation of a stem cell outside of the first part of the area to form a hyaline cartilage tissue.

Abstract: A system and method for quantum key distribution includes determining an intrinsic loss along a quantum channel; generating a pulse sequence; transmitting the pulse sequence via the quantum channel; receiving the pulse sequence; determining invalid signal positions and providing the invalid signal positions; determining a first reconciled signal from the first signal and the invalid signal positions, and determining a second reconciled signal from the second signal and the invalid signal positions; determining a total loss along the quantum channel from the at least one test pulse received, determining a signal loss from the total loss and the intrinsic loss, and providing the signal loss; determining a shared by error correcting the first reconciled signal and the second reconciled signal; and determining an amplified key from the shared key by shortening the shared key by a shortening amount that is determined from the signal loss.

Abstract: A method employs a device with a heterostructure as a resonator for electrons of an electrical circuit or for a terahertz electromagnetic wave. The heterostructure comprises at least one dielectric layer and at least one ferroelectric layer. The at least one ferroelectric layer comprises a plurality of ferroelectric polarization domains. The plurality of ferroelectric polarization domains forms a polarization pattern. The polarization pattern is adapted to perform an oscillation with a resonance frequency in a terahertz frequency range. The method comprises functionally coupling the oscillation of the polarization pattern and an oscillation of the electrons of the electrical circuit or of the terahertz electromagnetic wave by the device.

Abstract: A method for natural language processing comprises: receiving a sample comprising natural language; processing the sample, wherein processing the sample comprises generating a plurality of response hypotheses and generating a plurality of confidence values, wherein each response hypothesis is associated with the corresponding confidence value; and selecting a response, comprising selecting the response randomly among the plurality of response hypotheses based at least in part on the corresponding confidence value by utilizing a quantum random number generator.

Abstract: A superconductor device comprises a graphite structure, a first electrode, a second electrode, and a wrinkle region. The graphite structure comprises at least one topmost atomic layer. The first electrode is arranged over the at least one topmost atomic layer. The second electrode is arranged over the at least one topmost atomic layer and spaced apart from the first electrode. The wrinkle region is comprised in the at least one topmost atomic layer. The wrinkle region is arranged between the first electrode and the second electrode and comprises a plurality of wrinkles with a pair of wrinkles. The first electrode and the second electrode both electrically contact both wrinkles of the pair. A distance between the wrinkles of the pair is at most 0.2 ?m.

Abstract: A high-temperature superconducting qubit implements a quantum mechanical two-level system. The high-temperature superconducting qubit comprises a first superconductor, a second superconductor, and an overlap region. The first superconductor comprises a first high-temperature superconductor material. The second superconductor comprises a second high-temperature superconductor material. In the overlap region, at least a first section of the first surface and at least a second section of the second surface overlap, the first section and the second section are arranged in parallel at a distance corresponding to a predefined distance, and the first orientation and the second orientation are arranged with an angle corresponding to a predefined angle. The high-temperature superconducting qubit comprises a Josephson junction between the first high-temperature superconductor material and the second high-temperature superconductor material.

Abstract: A field effect transistor has a negative capacitance gate structure. The field effect transistor comprises a channel and a gate dielectric arranged over the channel. The negative capacitance gate structure comprises a bottom electrode structure comprising a bottom electrode, a multi-domain structure, and a top electrode structure. The multi-domain structure comprises a multi-domain element arranged over the bottom electrode, the multi-domain element comprising a plurality of topological domains and at least one topological domain wall. The top electrode structure comprises a top electrode arranged over the multi-domain element. At least a section of the bottom electrode structure of the negative capacitance gate structure is arranged over the gate dielectric and adapted to be coupled to the channel through the gate dielectric.