Abstract: The present invention relates to a method of purifying gaseous nitrogen trifluoride from CF4 as impurity. The method comprises selective adsorption of nitrogen trifluoride by dehydrated erionite at a temperature of from ?30 to 30° C., displacement of carbon tetrafluoride by an inert gas, desorption and condensation of the purified nitrogen trifluoride. The purification yields 99.99% pure NF3 with CF4 content not over 10 ppm. The proposed method of NF3 sorption purification makes it possible to carry out the process at an ambient temperature and with long operating life of the sorbent. The method is practically feasible, economically expedient, and easy to implement under industrial conditions.

Abstract: The invention relates to a new process for preparing nitrogen trifluoride which finds extensive application in the technology of semiconductors, high energy lasers, and chemical vapor deposition. Nitrogen trifluoride is prepared by the fluorination of urea or its decomposition products with elemental fluorine in anhydrous hydrogen fluoride at a temperature of from −20° C. to 0° C. and the molar ratio of fluorine to the starting compounds of not over 3. The concentration of the starting compounds in anhydrous hydrogen fluoride is preferably 20-50% by weight. The proposed process is explosion-safe and gives a product with maximum content of nitrogen trifluoride and minimum concentration of admixtures, with the yield of up to 90%.

Abstract: The present invention relates to a method of purifying gaseous nitrogen trifluoride from CF4 as impurity.

Abstract: The invention relates to a new process for preparing nitrogen trifluoride which finds extensive application in the technology of semiconductors, high energy lasers, and chemical vapor deposition.