Abstract: Disclosed herein is an organic thin film transistor comprising a substrate, a gate electrode, an organic insulating layer, an organic active layer and source/drain electrodes, wherein the interface between the organic insulating layer and the organic active layer is of relief structure. According to the present invention, an organic thin film transistor of enhanced electric properties can be obtained regardless of the organic insulating materials used.

Abstract: Disclosed herein is an organic thin film transistor comprising a substrate, a gate electrode, an organic insulating layer, an organic active layer and source/drain electrodes, wherein the interface between the organic insulating layer and the organic active layer is of relief structure. According to the present invention, an organic thin film transistor of enhanced electric properties can be obtained regardless of the organic insulating materials used.

Abstract: Flat materials made from a polymer with a backbone and side groups branching off the backbone (side group polymer), which polymer has the following structural features (1) to (3):(1) the side group polymer contains at least one photoinducibly configuration-changing side group;(2) the side group polymer contains at least one permanently conformationally anisotropic side group with high anisotropy of molecular polarisability which differs from (1);(3) the side group polymer contains flexible spacer groups between the backbone and the side groups (1) and (2);wherein the flat material in the glassy state of the side group polymers is optically isotropic, transparent, non-scattering and amorphous before irradiation and, after irradiation, is transparent and durably birefringent and dichroic due to a reversible, photoinduced alignment of the side groups (1) and (2) in the glassy state, may be purposefully modified in terms of their optical properties by the action of light.