Patents by Inventor Valery V. Komin

Valery V. Komin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8361835
    Abstract: Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.
    Type: Grant
    Filed: March 29, 2010
    Date of Patent: January 29, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Valery V. Komin, Hien-Minh Huu Le, David Tanner, James S. Papanu, Philip A. Greene, Suresh M. Shrauti, Roman Gouk, Steven Verhaverbeke
  • Patent number: 8318589
    Abstract: Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.
    Type: Grant
    Filed: March 29, 2010
    Date of Patent: November 27, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Valery V. Komin, Hien-Minh Huu Le, David Tanner, James S. Papanu, Philip A. Greene, Suresh M. Shrauti, Roman Gouk, Steven Verhaverbeke
  • Publication number: 20110126875
    Abstract: Methods for sputter depositing a transparent conductive layer and a conductive contact layer are provided in the present invention. In one embodiment, the method includes forming a transparent conductive layer on a substrate by materials sputtered from a first target disposed in a reactive sputter chamber, and forming a conductive contact layer on the transparent conductive layer by materials sputtered from a second target disposed in the reactive sputter chamber.
    Type: Application
    Filed: December 1, 2009
    Publication date: June 2, 2011
    Inventors: Hien-Minh Huu Le, Valery V. Komin, David Tanner, Mohd Fadzli Anwar Hassan, Tzay-Fa Su, Dapeng Wang
  • Publication number: 20100311228
    Abstract: Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.
    Type: Application
    Filed: March 29, 2010
    Publication date: December 9, 2010
    Inventors: VALERY V. KOMIN, Hien-Minh Huu Le, David Tanner, James S. Papanu, Philip A. Greene, Suresh M. Shrauti, Roman Gouk, Steven Verhaverbeke
  • Publication number: 20100311204
    Abstract: Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.
    Type: Application
    Filed: March 29, 2010
    Publication date: December 9, 2010
    Inventors: VALERY V. KOMIN, Hien-Minh Huu Le, David Tanner, James S. Papanu, Philip A. Greene, Suresh M. Shrauti, Roman Gouk, Steven Verhaverbeke