Patents by Inventor Van C. Huynh

Van C. Huynh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7161866
    Abstract: A memory device tester capable of testing for proper operation of reduced power states in memory devices. The memory device tester can include a processor or a state machine, each configured to send commands to the memory device, and to compare results. An example of a memory device that can be tested by the memory device tester is a Direct Rambus Dynamic Random Access Memory (DRDRAM). The described processing systems and other circuits can test a DRDRAM for proper operation in a standby (STBY) state. When the DRDRAM is in STBY, the column decoder is shut off to conserve power, and the DRDRAM should not respond to column packets on the column control bus. The method and apparatus provide for testing that the column decoder is shut off when in STBY with no banks active, which is the recommended usage pattern for the part.
    Type: Grant
    Filed: July 1, 2005
    Date of Patent: January 9, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Matthew R. Harrington, Van C. Huynh, Adin E. Hyslop
  • Patent number: 6914843
    Abstract: A memory device tester capable of testing for proper operation of reduced power states in memory devices. The memory device tester can include a processor or a state machine, each configured to send commands to the memory device, and to compare results. An example of a memory device that can be tested by the memory device tester is a Direct Rambus Dynamic Random Access Memory (DRDRAM). The described processing systems and other circuits can test a DRDRAM for proper operation in a standby (STBY) state. When the DRDRAM is in STBY, the column decoder is shut off to conserve power, and the DRDRAM should not respond to column packets on the column control bus. The method and apparatus provide for testing that the column decoder is shut off when in STBY with no banks active, which is the recommended usage pattern for the part.
    Type: Grant
    Filed: June 12, 2002
    Date of Patent: July 5, 2005
    Assignee: Micron Technology, Inc.
    Inventors: Matthew R. Harrington, Van C. Huynh, Adin E. Hyslop
  • Patent number: 6775192
    Abstract: A memory device tester capable of testing for proper operation of reduced power states in memory devices. The memory device tester can include a processor or a state machine, each configured to send commands to the memory device, and to compare results. An example of a memory device that can be tested by the memory device tester is a Direct Rambus Dynamic Random Access Memory (DRDRAM). The described processing systems and other circuits can test a DRDRAM for proper operation in a standby (STBY) state. When the DRDRAM is in STBY, the column decoder is shut off to conserve power, and the DRDRAM should not respond to column packets on the column control bus. The method and apparatus provide for testing that the column decoder is shut off when in STBY with no banks active, which is the recommended usage pattern for the part.
    Type: Grant
    Filed: June 12, 2002
    Date of Patent: August 10, 2004
    Assignee: Micron Technology, Inc.
    Inventors: Matthew R. Harrington, Van C. Huynh, Adin E. Hyslop
  • Patent number: 6674677
    Abstract: A memory device tester capable of testing for proper operation of reduced power states in memory devices. The memory device tester can include a processor or a state machine, each configured to send commands to the memory device, and to compare results. An example of a memory device that can be tested by the memory device tester is a Direct Rambus Dynamic Random Access Memory (DRDRAM). The described processing systems and other circuits can test a DRDRAM for proper operation in a standby (STBY) state. When the DRDRAM is in STBY, the column decoder is shut off to conserve power, and the DRDRAM should not respond to column packets on the column control bus. The method and apparatus provide for testing that the column decoder is shut off when in STBY with no banks active, which is the recommended usage pattern for the part.
    Type: Grant
    Filed: June 12, 2002
    Date of Patent: January 6, 2004
    Assignee: Micron Technology, Inc.
    Inventors: Matthew R. Harrington, Van C. Huynh, Adin E. Hyslop
  • Publication number: 20020190708
    Abstract: A memory device tester capable of testing for proper operation of reduced power states in memory devices. The memory device tester can include a processor or a state machine, each configured to send commands to the memory device, and to compare results. An example of a memory device that can be tested by the memory device tester is a Direct Rambus Dynamic Random Access Memory (DRDRAM). The described processing systems and other circuits can test a DRDRAM for proper operation in a standby (STBY) state. When the DRDRAM is in STBY, the column decoder is shut off to conserve power, and the DRDRAM should not respond to column packets on the column control bus. The method and apparatus provide for testing that the column decoder is shut off when in STBY with no banks active, which is the recommended usage pattern for the part.
    Type: Application
    Filed: June 12, 2002
    Publication date: December 19, 2002
    Applicant: Micron Technology, Inc.
    Inventors: Matthew R. Harrington, Van C. Huynh, Adin E. Hyslop
  • Publication number: 20020149981
    Abstract: A memory device tester capable of testing for proper operation of reduced power states in memory devices. The memory device tester can include a processor or a state machine, each configured to send commands to the memory device, and to compare results. An example of a memory device that can be tested by the memory device tester is a Direct Rambus Dynamic Random Access Memory (DRDRAM). The described processing systems and other circuits can test a DRDRAM for proper operation in a standby (STBY) state. When the DRDRAM is in STBY, the column decoder is shut off to conserve power, and the DRDRAM should not respond to column packets on the column control bus. The method and apparatus provide for testing that the column decoder is shut off when in STBY with no banks active, which is the recommended usage pattern for the part.
    Type: Application
    Filed: June 12, 2002
    Publication date: October 17, 2002
    Applicant: Micron Technology, Inc.
    Inventors: Matthew R. Harrington, Van C. Huynh, Adin E. Hyslop
  • Publication number: 20020149982
    Abstract: A memory device tester capable of testing for proper operation of reduced power states in memory devices. The memory device tester can include a processor or a state machine, each configured to send commands to the memory device, and to compare results. An example of a memory device that can be tested by the memory device tester is a Direct Rambus Dynamic Random Access Memory (DRDRAM). The described processing systems and other circuits can test a DRDRAM for proper operation in a standby (STBY) state. When the DRDRAM is in STBY, the column decoder is shut off to conserve power, and the DRDRAM should not respond to column packets on the column control bus. The method and apparatus provide for testing that the column decoder is shut off when in STBY with no banks active, which is the recommended usage pattern for the part.
    Type: Application
    Filed: June 12, 2002
    Publication date: October 17, 2002
    Applicant: Micron Technology, Inc.
    Inventors: Matthew R. Harrington, Van C. Huynh, Adin E. Hyslop
  • Patent number: 6418070
    Abstract: A memory device tester capable of testing for proper operation of reduced power states in memory devices. The memory device tester can include a processor or a state machine, each configured to send commands to the memory device, and to compare results. An example of a memory device that can be tested by the memory device tester is a Direct Rambus Dynamic Random Access Memory (DRDRAM). The described processing systems and other circuits can test a DRDRAM for proper operation in a standby (STBY) state. When the DRDRAM is in STBY, the column decoder is shut off to conserve power, and the DRDRAM should not respond to column packets on the column control bus. The DRDRAM Specification suggests that the DRDRAM be put in the STBY state with no banks active. The method and apparatus provide for testing that the column decoder is shut off when in STBY with no banks active, which is the recommended usage pattern for the part.
    Type: Grant
    Filed: September 2, 1999
    Date of Patent: July 9, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Matthew R. Harrington, Van C. Huynh, Adin E. Hyslop