Abstract: This application discloses a computing system implementing a parasitic extraction tool to generate a parasitic model from physical design layout of an integrated circuit. The computing system also can implement a machine-learning classifier that, when trained with a training data set, can classify the physical design layout based on physical or electrical characteristics associated with the physical design layout, and can utilize the classification to select a set of scaling coefficients. The computing system can apply the selected set of the scaling coefficients to adjust coupling capacitances in the parasitic model and generate a parasitic netlist for the physical design layout. The computing system can generate the training data set by determining sets of the scaling coefficients from the test physical design layouts and labeling the test physical design layouts with the sets of the scaling coefficients.

Abstract: This application discloses a computing system implementing a parasitic extraction tool to generate a parasitic model from physical design layout of an integrated circuit. The computing system also can implement a machine-learning classifier that, when trained with a training data set, can classify the physical design layout based on physical or electrical characteristics associated with the physical design layout, and can utilize the classification to select a set of scaling coefficients. The computing system can apply the selected set of the scaling coefficients to adjust coupling capacitances in the parasitic model and generate a parasitic netlist for the physical design layout. The computing system can generate the training data set by determining sets of the scaling coefficients from the test physical design layouts and labeling the test physical design layouts with the sets of the scaling coefficients.

Abstract: Disclosed herein are embodiments of tools and techniques for computing the electric coupling in terms of parasitic admittance and capacitance values between a through silicon via (TSV) and surrounding interconnect of an integrated circuit layout design. In particular embodiments, a computation of one or more admittance and capacitance values between a through-silicon-via (TSV) structure and an interconnect structure of the three-dimensional integrated circuit layout design using two or more field solvers or rule-based engines that are different from one another is performed. In addition, electrical connectivity for the coupling parasitic between a TSV and an interconnect is established. Then, a parasitic netlist representation of the three-dimensional integrated circuit layout design that includes the above parasitic element values is generated.

Abstract: This application discloses a computing system implementing a parasitic extraction tool to generate parasitic netlists from tests cases including test layout models of integrated circuit structures. The test cases include reference netlists corresponding to intended parasitic netlists for the test layout models. The computing system can determine values for scaling coefficients that, when utilized by the parasitic extraction tool to generate the parasitic netlists, allow differences between the parasitic netlists and the reference netlists to fall below threshold levels. The determination of the scaling coefficients is performed by iteratively adjusting the values of the scaling coefficients based on differences between the reference netlists and the parasitic netlists generated with the scaling coefficients having the adjusted values.

Abstract: This application discloses a computing system implementing a parasitic extraction tool to generate parasitic netlists from tests cases including test layout models of integrated circuit structures. The test cases include reference netlists corresponding to intended parasitic netlists for the test layout models. The computing system can determine values for scaling coefficients that, when utilized by the parasitic extraction tool to generate the parasitic netlists, allow differences between the parasitic netlists and the reference netlists to fall below threshold levels. The determination of the scaling coefficients is performed by iteratively adjusting the values of the scaling coefficients based on differences between the reference netlists and the parasitic netlists generated with the scaling coefficients having the adjusted values.

Abstract: Aspects of the invention relate to techniques for extracting admittance values associated with through-silicon vias in an integrated circuit system. A function fitting process is performed to generate parameters of a representation for electro-quasi-static potential Green's functions at a plurality of frequencies of interest based on integrated circuit manufacturing process information. Based on the generated parameters, a set of electric potential basis functions, a set of electric displacement basis functions and layout information for a layout design of interest, matrix elements of a matrix for each frequency in the plurality of frequencies of interest may be computed. The matrix is a part of a linear system that formulates a relationship of electric displacement fields and electric potentials in various regions associated with through-silicon vias in the layout design. Based on the matrix, admittance values associated with the through-silicon vias are computed.

Abstract: Aspects of the invention relate to techniques for extracting impedance values associated with through-silicon vias in an integrated circuit system. A function fitting process is performed to generate parameters of a representation for magneto-quasi-static dyadic vector potential Green's functions at a plurality of frequencies of interest based on integrated circuit manufacturing process information. Based on the generated parameters, a set of electric current basis functions and the layout information for a layout design of interest, matrix elements of a matrix for each frequency in the plurality of frequencies of interest may be computed. The matrix is a part of a linear system that formulates a relationship of electric current and electric potential difference in various regions associated with the through-silicon vias in the layout design. Based on the matrix, impedance values associated with the through-silicon vias are computed.