Abstract: High density, photon-gated persistent spectral holeburning is effectuated in rare earth doped II-VI compounds such as MgS, CaS, BaS and SrS. Two-photon ionization of rare earth ions is performed, selected by a narrow band laser, producing narrow regions of reduced absorption (optical holes) in the absorption spectrum of a rare earth ion. These holes are useful for such applications as high density memory (especially, high density re-writable or photo-erasable memory), spectral holographic memory, communication, etc., no and demonstrate great survivability over reading cycles, thermal cycles and elevated temperatures. The embedment of the rare earth doped II-VI compound in a matrix comprising a polymeric material (such as PMMA), prior to the effectuation of the holeburning, may be advantageous for many embodiments. Inventive practice has successfully burned two hundred forty photon gated spectral holes in the zero phonon line (ZPL) of the 4f-5d transition of Eu2+ in a magnesium sulfide host.

Abstract: High density, photon-gated persistent spectral holeburning is effectuated in rare earth doped II-VI compounds such as MgS, CaS, BaS and SrS. Two-photon ionization of rare earth ions is performed, selected by a narrow band laser, producing narrow regions of reduced absorption (optical holes) in the absorption spectrum of a rare earth ion. These holes are useful for such applications as high density memory (especially, high density re-writable or photo-erasable memory), spectral holographic memory, communication, etc., and demonstrate great survivability over reading cycles, thermal cycles and elevated temperatures. The embedment of the rare earth doped II-VI compound in a matrix comprising a polymeric material (such as PMMA), prior to the effectuation of the holeburning, may be advantageous for many embodiments. Inventive practice has successfully burned two hundred forty photon gated spectral holes in the zero phonon line (ZPL) of the 4f-5d transition of Eu2+ in a magnesium sulfide host.