Patents by Inventor Veikko Tuominen
Veikko Tuominen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11646193Abstract: A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).Type: GrantFiled: December 9, 2019Date of Patent: May 9, 2023Assignee: TURUN YLIOPISTOInventors: Mikhail Kuzmin, Pekka Laukkanen, Yasir Muhammad, Marjukka Tuominen, Johnny Dahl, Veikko Tuominen, Jaakko Makela, Marko Punkkinen, Kalevi Kokko
-
Patent number: 11615952Abstract: A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).Type: GrantFiled: February 17, 2016Date of Patent: March 28, 2023Assignee: TURUN YLIOPISTOInventors: Mikhail Kuzmin, Pekka Laukkanen, Yasir Muhammad, Marjukka Tuominen, Johnny Dahl, Veikko Tuominen, Jaakko Makela, Marko Punkkinen, Kalevi Kokko
-
Publication number: 20200111662Abstract: A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).Type: ApplicationFiled: December 9, 2019Publication date: April 9, 2020Applicant: Turun YliopistoInventors: Mikhail KUZMIN, Pekka LAUKKANEN, Yasir MUHAMMAD, Marjukka TUOMINEN, Johnny DAHL, Veikko TUOMINEN, Jaakko MAKELA, Marko PUNKKINEN, Kalevi KOKKO
-
Patent number: 10256290Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.Type: GrantFiled: November 2, 2017Date of Patent: April 9, 2019Assignee: Comptek Solutions OyInventors: Pekka Laukkanen, Jouko Lang, Marko Punkkinen, Marjukka Tuominen, Veikko Tuominen, Johnny Dahl, Juhani Vayrynen
-
Publication number: 20180218901Abstract: A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).Type: ApplicationFiled: February 17, 2016Publication date: August 2, 2018Applicant: Turun YliopistoInventors: Mikhail KUZMIN, Pekka LAUKKANEN, Yasir MUHAMMAD, Marjukka TUOMINEN, Johnny DAHL, Veikko TUOMINEN, Jaakko MAKELA, Marko PUNKKINEN, Kalevi KOKKO
-
Publication number: 20180069074Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.Type: ApplicationFiled: November 2, 2017Publication date: March 8, 2018Applicant: Comptek Solutions OyInventors: Pekka LAUKKANEN, Jouko LANG, Marko PUNKKINEN, Marjukka TUOMINEN, Veikko TUOMINEN, Johnny DAHL, Juhani VAYRYNEN
-
Patent number: 9837486Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.Type: GrantFiled: September 15, 2015Date of Patent: December 5, 2017Assignee: Comptek Solutions OyInventors: Pekka Laukkanen, Jouko Lang, Marko Punkkinen, Marjukka Tuominen, Veikko Tuominen, Johnny Dahl, Juhani Vayrynen
-
Patent number: 9269763Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.Type: GrantFiled: November 8, 2011Date of Patent: February 23, 2016Assignee: Turun YliopistoInventors: Pekka Laukkanen, Jouko Lang, Marko Punkkinen, Marjukka Tuominen, Veikko Tuominen, Johnny Dahl, Juhani Vayrynen
-
Publication number: 20160049295Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.Type: ApplicationFiled: September 15, 2015Publication date: February 18, 2016Applicant: TURUN YLIOPISTOInventors: Pekka LAUKKANEN, Jouko LANG, Marko PUNKKINEN, Marjukka TUOMINEN, Veikko TUOMINEN, Johnny DAHL, Juhani VAYRYNEN
-
Publication number: 20130214331Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.Type: ApplicationFiled: November 8, 2011Publication date: August 22, 2013Applicant: TURUN YLIOPISTOInventors: Pekka Laukkanen, Jouko Lang, Marko Punkkinen, Marjukka Tuominen, Veikko Tuominen, Johnny Dahl, Juhani Vayrynen
