Abstract: Magnetoresistive sensors are used to measure a load current of a switch. In some implementations, additionally a further current sensor may be used. In other implementations, more than one magnetoresistive sensor may be provided.

Abstract: Devices and methods are provided relating to supplying a load having an inrush-current behavior, e.g. charging of a capacitance e.g. at power up of a circuit. A first load path and a second load path are provided which are used in an alternating manner.

Abstract: An first embodiment relates to a device comprising: a first semiconductor switch; an integrated sensor for determining a current that passes the first semiconductor switch; and a terminal to which a signal is provided in case the current fulfills a predetermined condition. Also, a system comprising such device, and a method of operation are suggested.

Abstract: A device is suggested comprising at least two transistors, each of the transistors comprising a current path and a control terminal, wherein the current paths of the at least two transistors are arranged in parallel, wherein the control terminals of the at least two transistors are connected to a control node via at least one voltage drop component. Also, a method to efficiently control at least two transistors is provided.

Abstract: A circuit includes an electronic switch with an isolated gate, a measuring device for determining a charge at the isolated gate, and an energy supply for providing charge to the isolated gate based on the charge determined by the measuring device.

Abstract: A device is suggested comprising at least two transistors, each of the transistors comprising a current path and a control terminal, wherein the current paths of the at least two transistors are arranged in parallel, wherein the control terminals of the at least two transistors are connected to a control node via at least one voltage drop component. Also, a method to efficiently control at least two transistors is provided.

Abstract: Magnetoresistive sensors are used to measure a load current of a switch. In some implementations, additionally a further current sensor may be used. In other implementations, more than one magnetoresistive sensor may be provided.

Abstract: An first embodiment relates to a device comprising: a first semiconductor switch; an integrated sensor for determining a current that passes the first semiconductor switch; and a terminal to which a signal is provided in case the current fulfills a predetermined condition. Also, a system comprising such device, and a method of operation are suggested.

Abstract: A method for producing a body (1) consisting of doped semiconductor material having a defined mean free path length (lambda n) for free charge carriers (CP), and a mean free path length (lambda r) for the free charge carriers (CP) which is smaller than the defined mean free path length (lambda n) is disclosed. An epitactic crystal layer (20) consisting of doped semiconductor material is produced on a substrate crystal (10) consisting of semiconductor material having the defined mean free path length (lambda n), said crystal layer having, at least locally, a mean free path length (lambda r) for the free charge carriers (CP) which is smaller than the defined mean free path length (lambda n). The body (1) can also be produced by joining two crystal bodies (10?, 10?) consisting of doped semiconductor material.

Abstract: Devices and methods are provided relating to supplying a load having an inrush-current behavior, e.g. charging of a capacitance e.g. at power up of a circuit. A first load path and a second load path are provided which are used in an alternating manner.

Abstract: A circuit includes an electronic switch with an isolated gate, a measuring device for determining a charge at the isolated gate, and an energy supply for providing charge to the isolated gate based on the charge determined by the measuring device.

Abstract: A circuit includes an electronic switch with an isolated gate, a measuring device for determining a charge at the isolated gate, and an energy supply for providing charge to the isolated gate based on the charge determined by the measuring device.

Abstract: Switch devices with a first switching path and a second switching path are provided in some embodiments. When a voltage drop across the first switching path exceeds a predetermined voltage, the second switch may be activated.

Abstract: A circuitry is suggested, in particular a power switch, comprising a first electronic switch with an isolated gate; a second electronic switch with an isolated gate; a measuring device for determining a charge at the isolated gate of the first electronic switch and at the isolated gate of the second electronic switch; an energy supply for providing charge to the isolated gate of the first electronic switch and to the isolated gate of the second electronic switch based on the charge determined by the measuring device; a logic unit for activating either the first electronic switch, both or none of the electronic switches.

Abstract: Switch devices with a first switching path and a second switching path are provided in some embodiments. When a voltage drop across the first switching path exceeds a predetermined voltage, the second switch may be activated.

Abstract: An electronic device includes a semiconductor structure. A first temperature sensor is located at a hot spot of the semiconductor structure and a second temperature sensor is located at a cold spot of the semiconductor structure. A control block is configured to control current flow through the semiconductor structure. For example, the control block is configured to cut off the current flow through the semiconductor structure when a temperature at the hot spot exceeds a first predefined threshold or when a temperature difference between the temperature at the hot spot and a temperature at the cold spot exceeds a second predefined threshold.

Abstract: An electronic circuit includes an electronic switch with a control terminal and a load path between a first and a second load terminal, and a drive circuit with an output terminal coupled to the control terminal of the electronic switch. The drive circuit includes a first input terminal and a second input terminal, a first drive unit coupled between the first input terminal and the output terminal and including a charge pump and drive unit, and a second drive unit coupled between the second input terminal and the output terminal and including a further electronic switch coupled between the output terminal and a terminal for a reference potential.

Abstract: A circuitry is suggested, in particular a power switch, comprising a first electronic switch with an isolated gate; a second electronic switch with an isolated gate; a measuring device for determining a charge at the isolated gate of the first electronic switch and at the isolated gate of the second electronic switch; an energy supply for providing charge to the isolated gate of the first electronic switch and to the isolated gate of the second electronic switch based on the charge determined by the measuring device; a logic unit for activating either the first electronic switch, both or none of the electronic switches.

Abstract: A circuit includes an electronic switch with an isolated gate, a measuring device for determining a charge at the isolated gate, and an energy supply for providing charge to the isolated gate based on the charge determined by the measuring device.

Abstract: An electronic device includes a semiconductor structure. A first temperature sensor is located at a hot spot of the semiconductor structure and a second temperature sensor is located at a cold spot of the semiconductor structure. A control block is configured to control current flow through the semiconductor structure. For example, the control block is configured to cut off the current flow through the semiconductor structure when a temperature at the hot spot exceeds a first predefined threshold or when a temperature difference between the temperature at the hot spot and a temperature at the cold spot exceeds a second predefined threshold.