Patents by Inventor Veli Matti Airaksinen

Veli Matti Airaksinen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for depositing one or more polycrystalline silicon layers on substrate
    Patent number: 9728452
    Abstract: A method for depositing one or more polycrystalline silicon layers (230c) on a substrate (210) by a chemical vapor deposition in a reactor, includes adjusting a deposition temperature between 605° C.-800° C. in a process chamber of the reactor, and depositing the one or more polycrystalline silicon layers on the substrate by using a silicon source gas including SiH4 or SiH2Cl2, and a dopant gas including BCl3.
    Type: Grant
    Filed: March 30, 2012
    Date of Patent: August 8, 2017
    Assignee: OKMETIC OYJ
    Inventors: Veli Matti Airaksinen, Jari Makinen
  • METHOD FOR DEPOSITING ONE OR MORE POLYCRYSTALLINE SILICON LAYERS ON SUBSTRATE
    Publication number: 20140061867
    Abstract: A method for depositing one or more polycrystalline silicon layers (230c) on a substrate (210) by a chemical vapour deposition in a reactor, includes adjusting a deposition temperature between 605° C.-800° C. in a process chamber of the reactor, and depositing the one or more polycrystalline silicon layers on the substrate by using a silicon source gas including SiH4 or SiH2Cl2, and a dopant gas including BCl3.
    Type: Application
    Filed: March 30, 2012
    Publication date: March 6, 2014
    Applicant: Okmetic OYJ
    Inventors: Veli Matti Airaksinen, Jari Makinen
  • CVD doped structures
    Patent number: 7435665
    Abstract: A new clean CVD growing process of dopant doped silicon layers comprising epitaxial silicon or polycrystalline silicon, has been developed. The process is occurring advantageously at a high growing temperature of 600-1250° C., having a phase in which silicon comprised halide is used as a silicon source gas with a dopant.
    Type: Grant
    Filed: October 6, 2004
    Date of Patent: October 14, 2008
    Assignee: Okmetic Oyj
    Inventors: Veli Matti Airaksinen, Maria Elina Hokkanen