Abstract: A Czochralski growth system is described comprising a growth chamber, a feed port, and a feed chamber comprising a container for feedstock and a feeder. The feed port is disposed in at least one side wall of the growth chamber, and the feed chamber is attached to the growth chamber at the feed port. The feeder is insertable into the growth chamber through the feed port and supplies the feedstock into the growth chamber. Preferably this system can be used for producing silicon ingots using a continuous Czochralski method.

Abstract: A Czochralski growth system comprising a growth chamber, an isolation valve, a feed chamber containing feedstock, and a feeder is described. The isolation valve is disposed in at least one side wall of the growth chamber, and the feed chamber is vacuum sealed to the growth chamber through the isolation valve. The feeder is insertable into the growth chamber through the isolation valve and supplies the feedstock into the growth chamber. Preferably this system can be used for producing silicon ingots using a continuous Czochralski method.

Abstract: A method of laterally adjusting the position of a pull wire of a crystal pulling machine to dampen pendular motion of the pull wire during production of a monocrystal comprises: placing a close-fitting guide around the pull wire; rotating the pulling chamber about the axis Z.sub.1 to rotate both the pull wire and the monocrystal supported by the pull wire; sensing the lateral position of a portion of the pull wire; adjusting the lateral position of the guide in response to the sensed position of the pull wire to dampen pendular motion of the pull wire during production of a monocrystal.