Abstract: A baseband carrier phase corrector is disclosed which permits rapid demodulation and demodulation of varying RF input signals. The baseband carrier phase corrector receives RF signals, or alternatively, IF signals, and converts the signals to baseband. An RF signal received by the baseband carrier phase corrector is split and multiplied with oscillating signals having a 90 degree phase differential. The resultant signals are baseband in-phase (I) and quadrature (Q) signals. The I and Q signals are filtered through low pass filters. The filtered I and Q signals are multiplied within a first complex multiplier with a generated phase error. The output of the first complex multiplier results in phase adjusted I and Q baseband signals. A symbol decision circuit estimates digital I and Q signals which are the allowed symbols closest in phase to the phase adjusted I and Q baseband signals. A second complex multiplier is coupled to the symbol decision circuit and to the outputs of the low pass filters.

Abstract: A half-duplex transceiver circuit is disclosed in which a single diode acts as both the light emitter and the light detector. The diode is connected in parallel with a junction in an associated device. The forward voltage drop across the diode exceeds the forward voltage drop across the junction.

Abstract: A monolithic light-activated line-operable zero-crossing switch and method of making the same. The device comprises anti-parallel thyristors, each of whose gates is shunted by a field effect transistor. Each device may also be shunted by a resistor to reduce the overall sensitivity. The method of making the device contemplates surrounding the field effect transistor gate electrode and an internal shunt electrode by the primary metallization which forms the contact to the two main terminals of the device.

Abstract: A monolithic light-activated line-operable zero-crossing switch and method of making the same. The device comprises anti-parallel thyristors, each of whose gates is shunted by a field effect transistor. Each device may also be shunted by a resistor to reduce the overall sensitivity. The method of making the device contemplates surrounding the field effect transistor gate electrode and an internal shunt electrode by the primary metallization which forms the contact to the two main terminals of the device.