Patents by Inventor Vesna Gobel

Vesna Gobel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing a diode
    Patent number: 5686319
    Abstract: In a method for producing a diode, a first, strongly positively doped silicon wafer is bonded in accordance with the silicon fusion method to a second, weakly negatively doped silicon wafer, and subsequently the weakly negatively doped second silicon wafer is ground down to a predetermined thickness. A chromium layer which contains a small percentage of arsenic is used for resistive contact-making on the negatively doped second silicon wafer. In this way, a diode is obtained which has a small forward voltage in conjunction with a precise breakdown voltage.
    Type: Grant
    Filed: October 10, 1995
    Date of Patent: November 11, 1997
    Assignee: Robert Bosch GmbH
    Inventors: Herbert Goebel, Vesna Gobel