Abstract: The invention relates to a conversion element comprising a wavelength-converting conversion material, a matrix material in which the conversion material is inserted, and a substrate on which the matrix material and the conversion material are directly arranged, the matrix material comprising at least one condensed sol-gel material selected from the following group: water glass, metal phosphate, aluminium phosphate, monoaluminium phosphate, modified monoaluminium phosphate, alkoxytetramethoxysilane, tetraethyl orthosilicate, methyltrimethoxysilane, methyltriethoxysilane, titanium alkoxide, silica sol, metal alkoxide, metal oxane or metal alkoxane, the conversion element being arranged in the beam path of a laser source, the conversion element being mounted in a mechanically immobile manner in relation to the laser source, and the radiation of the laser source being dynamically arranged in relation to the conversion element.

Abstract: A component may include a semiconductor body and a converter layer. The converter layer may have phosphor particles and an electrically conductive matrix material where the phosphor particles are embedded in the matrix material. The converter layer may be arranged on the semiconductor body and may have a plurality of sublayers that are spatially set apart from one another and can be electrically contacted individually. The semiconductor body may have an active zone for producing electromagnetic radiation where the sublayers of the converter layer are designed for local electrical contacting of the active zone.

Abstract: A method for producing an optoelectronic component is described with the steps of providing monomeric structural units, providing nanoparticles in a liquid medium, mixing the monomeric structural units and the nanoparticles in the liquid medium so that a starting sol is formed, introducing an acid into the starting sol to adjust a pH value, at least partial condensation of the monomeric structural units to form a network, wherein the nanoparticles are at least partially covalently bonded to the network, so that a sol-gel material is formed, applying the sol-gel material to a semiconductor chip, curing the sol-gel material to form a coating material. Furthermore, an optoelectronic component is specified.

Abstract: The invention relates to a conversion element comprising a wavelength-converting conversion material, a matrix material in which the conversion material is inserted, and a substrate on which the matrix material and the conversion material are directly arranged, the matrix material comprising at least one condensed sol-gel material selected from the following group: water glass, metal phosphate, aluminium phosphate, monoaluminium phosphate, modified monoaluminium phosphate, alkoxytetramethoxysilane, tetraethyl orthosilicate, methyltrimethoxysilane, methyltriethoxysilane, titanium alkoxide, silica sol, metal alkoxide, metal oxane or metal alkoxane, the conversion element being arranged in the beam path of a laser source, the conversion element being mounted in a mechanically immobile manner in relation to the laser source, and the radiation of the laser source being dynamically arranged in relation to the conversion element.

Abstract: An enveloping material for an optoelectronic semiconductor chip is specified having —a starting material for forming a sol-gel material, and —a stabilizer material, configured for mechanical stabilization, wherein —the starting material comprises at least one alkoxy (alkyl)silane, and —the stabilizer material is selected from a group containing the following materials: salts, metal alkoxides, metal oxides. Furthermore, a conversion material and an optoelectronic component having such an enveloping material are specified. Additionally, a method for producing an enveloping material is specified.

Abstract: An optoelectronic device including a passivation layer and a method for manufacturing an optoelectronic device are disclosed. In an embodiment an optoelectronic device includes an optoelectronic semiconductor chip comprising optoelectronic semiconductor layers configured to generate electromagnetic radiation, the optoelectronic semiconductor layers having a first semiconductor layer from which the generated electromagnetic radiation is configured to be coupled out and a passivation layer in direct contact with a first main surface of the first semiconductor layer, wherein the passivation layer includes quantum dot particles configured to convert a wavelength of the electromagnetic radiation, wherein the passivation layer has a refractive index larger than 1.6, and wherein a surface of the passivation layer remote from the first semiconductor layer forms a first main surface of the optoelectronic device.

Abstract: The present invention relates to nanocrystalline cellulose, an efficient way of its preparation and to uses of such nanocrystalline cellulose. The present invention also relates to porous metal oxides having a chiral nematic structure which are prepared using nanocrystalline cellulose.

Abstract: The present invention relates to nanocrystalline cellulose, an efficient way of its preparation and to uses of such nanocrystalline cellulose. The present invention also relates to porous metal oxides having a chiral nematic structure which are prepared using nanocrystalline cellulose.

Abstract: A component may include a semiconductor body and a converter layer. The converter layer may have phosphor particles and an electrically conductive matrix material where the phosphor particles are embedded in the matrix material. The converter layer may be arranged on the semiconductor body and may have a plurality of sublayers that are spatially set apart from one another and can be electrically contacted individually. The semiconductor body may have an active zone for producing electromagnetic radiation where the sublayers of the converter layer are designed for local electrical contacting of the active zone.

Abstract: The present invention relates to nanocrystalline cellulose, an efficient way of its preparation and to uses of such nanocrystalline cellulose. The present invention also relates to porous metal oxides having a chiral nematic structure which are prepared using nanocrystalline cellulose.