Patents by Inventor Victor E. Haven

Victor E. Haven has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High pressure MOCVD reactor system
    Patent number: 6066204
    Abstract: An apparatus and method is disclosed for providing vapor-phase epitaxial growth on a substrate using a Metal Organic Chemical Vapor Deposition (MOCVD) process. The process is performed in a reactive chamber pressurized to greater than one atmosphere. The reactant gases to be deposited on the substrate are also pressurized to the equivalent pressure, and then introduced into the reactor chamber. By performing the MOCVD process at a pressure greater than one atmosphere, a reduced amount of reactant gas is required to complete the deposition process.
    Type: Grant
    Filed: January 8, 1997
    Date of Patent: May 23, 2000
    Assignee: Bandwidth Semiconductor, LLC
    Inventor: Victor E. Haven