Patents by Inventor Victor H Fuentes

Victor H Fuentes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6508198
    Abstract: In a plasma reactor for processing a semiconductor wafer having an overhead inductive coil antenna, automatic compensation for the load impedance shift that accompanies plasma ignition is achieved using fixed elements. This is accomplished by applying RF power to an intermediate tap of the coil antenna that divides the antenna into two portions, while permanently suppressing the inductance of one of the two portions to an at least nearly fixed level.
    Type: Grant
    Filed: May 11, 2000
    Date of Patent: January 21, 2003
    Assignee: Applied Materials Inc.
    Inventors: Daniel J. Hoffman, Peter K. Loewenhardt, Victor H. Fuentes, Qiwei Liang
  • Patent number: 6326597
    Abstract: Temperature control of a process chamber 25 is achieved by directing a flow of gas at an external surface 100 of the chamber 25. In one aspect, gas directed at the chamber 25 passes through a gas flow amplifier 115 that increases the gas flow. Gas for the temperature control can be drawn in from the ambient air and, after passing over the process chamber 25, the gas can flow out through an outlet 150. Data is presented demonstrating superior temperature control performance over a conventional system.
    Type: Grant
    Filed: April 15, 1999
    Date of Patent: December 4, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Dmitry Lubomirsky, Allen I. D'ambra, Edward L Floyd, Qiwei Liang, Daniel J Hoffman, Victor H Fuentes, Simon Yavelberg, Jerry C Chen