Abstract: Electronic system including an inhaler device for dispensing a medicament formulation in aerosol or dry powder form and an external device which is configured to receive data communicated from the inhaler device. The inhaler device includes a mouthpiece and a flow rate sensor for sensing a flow rate of an inhalation flow which is caused by a patient upon inhalation through the mouthpiece and in which the medicament formulation is entrained or dispensed. The inhaler device further comprises an actuation sensing device having at least one actuation sensor which is configured to sense preparatory steps of the inhaler device in order to prepare a use of the inhaler device and/or to sense the actuation of the inhaler device in order to dispense the medicament formulation. The actuation sensor and the flow rate sensor are configured to generate sensor signals.

Abstract: A method for manufacturing stringers for aircraft, wherein the stringer comprises two semi-stringers, includes steps of placing tows on a flat surface for forming the semi-stringers independently or at the same time, the placement being made by partially overlapping the tows and orientating the tows on the flat surface according to boundaries of the flat surface, the tows covering the boundaries of the flat surface; and cutting the tows so that a shape of the tows corresponds to the shape of the flat surface defined by boundaries of the flat surface.

Abstract: Methods and systems for the electrochemical finishing of SiC wafers. Embodiments of these methods use an applied electrical bias, an electrolytic oxidant removal solution and light to remove raised surface features and imperfections of an SiC wafer.

Abstract: A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.

Abstract: A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.

Abstract: A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.

Abstract: An optical resonator frequency comb comprising a main optical resonator being made of a resonator material, which has a third order nonlinearity and an anomalous resonator dispersion; a continuous wave (cw) laser configured for supplying continuous laser light into an optical waveguide, which is coupled with the main optical resonator. The cw laser, the optical waveguide and the main optical resonator are arranged for resonantly coupling the cw laser light into the main optical resonator for forming a single dissipative soliton circulating in the main optical resonator corresponding to the generation of a frequency comb. Furthermore, the optical resonator frequency comb further comprises an auxiliary optical element configured to induce a phase shift to a frequency comb component at the cw laser frequency to enhance the conversion efficiency of a generated frequency comb. The disclosure also relates to an associated method.

Abstract: An optical resonator frequency comb (1) comprising a main optical resonator (2) being made of a resonator material, which has a third order nonlinearity and an anomalous resonator dispersion; a continuous wave (cw) laser (4) configured for supplying continuous laser light into an optical waveguide (5), which is coupled with the main optical resonator. The cw laser (4), the optical waveguide (5) and the main optical resonator (2) are arranged for resonantly coupling the cw laser light into the main optical resonator (2) for forming a single dissipative soliton circulating in the main optical resonator (2) corresponding to the generation of a frequency comb. Furthermore, the optical resonator frequency comb further comprises an auxiliary optical element (3, 25, 26) configured to induce a phase shift to a frequency comb component at the cw laser frequency to enhance the conversion efficiency of a generated frequency comb. The disclosure also relates to an associated method.

Abstract: Electronic system including an inhaler device for dispensing a medicament formulation in aerosol or dry powder form and an external device which is configured to receive data communicated from the inhaler device. The inhaler device includes a mouthpiece and a flow rate sensor for sensing a flow rate of an inhalation flow which is caused by a patient upon inhalation through the mouthpiece and in which the medicament formulation is entrained or dispensed. The inhaler device further comprises an actuation sensing device having at least one actuation sensor which is configured to sense preparatory steps of the inhaler device in order to prepare a use of the inhaler device and/or to sense the actuation of the inhaler device in order to dispense the medicament formulation. The actuation sensor and the flow rate sensor are configured to generate sensor signals.

Abstract: A method for sputtering an aluminum layer on a surface of a semiconductor device is presented. The method includes three sputtering steps for depositing the aluminum layer, where each sputtering step includes at least one sputtering parameter that is different from a corresponding sputtering parameter of another sputtering step. The surface of the semiconductor device includes a dielectric layer having a plurality of openings formed through the dielectric layer.

Abstract: A method for sputtering an aluminum layer on a surface of a semiconductor device is presented. The method includes three sputtering steps for depositing the aluminum layer, where each sputtering step includes at least one sputtering parameter that is different from a corresponding sputtering parameter of another sputtering step. The surface of the semiconductor device includes a dielectric layer having a plurality of openings formed through the dielectric layer.

Abstract: A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate.

Abstract: A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate.

Abstract: An optical comb generator, having a light input port configured to receive a continuous wave light from a laser source and a plurality of phase modulators coupled to the light input port. At least one intensity modulator is coupled to the plurality of the phase modulators, along with a plurality of phase shifters. The phase shifters are coupled to a corresponding phase modulator. A radio frequency (RF) clock is coupled to the phase modulators and the intensity modulator, and configured to provide synchronous clock input to the phase modulators and the intensity modulator. The comb generator may also incorporate an RF switch disposed between the RF clock and the phase shifters associated with a phase modulator, so that the RF switch enables tuning each corresponding phase shifter to thereby provide a tunable optical comb.

Abstract: A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate.

Abstract: A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate.

Abstract: This invention relates to a method for the manufacture of monolithic ingot of silicon carbide comprising: i) introducing a mixture comprising polysilicon metal chips and carbon powder into a cylindrical reaction cell having a lid; ii) sealing the cylindrical reaction cell of i); iii) introducing the cylindrical reaction cell of ii) into a vacuum furnace; iv) evacuating the furnace of iii); v) filling the furnace of iv) with a gas mixture which is substantially inert gas to near atmospheric pressure; vi) heating the cylindrical reaction cell in the furnace of v) to a temperature of from 1600 to 2500° C.; vii) reducing the pressure in the cylindrical reaction cell of vi) to less than 50 torr but not less than 0.05 torr; and viii) allowing for substantial sublimation and condensation of the vapors on the inside of the lid of the cylindrical reaction cell of vii).

Abstract: A method for stringing a first elongate element through a second elongate element is provided by placing the first elongate element in a channel and injecting compressed gas into the channel to propel the first elongate element therethrough. The channel has a first open end, and the second elongate element is sealed around the first open end. Compressed gas is injected into the channel towards the second elongate element, propelling the first elongate element through the second elongate element. Also disclosed is a system for performing such a method, including a source of compressed gas and a housing having a channel with a first end and a second open end. The first end is in fluid communication with the source of compressed gas. The channel has a tapered portion adjacent the open end of the channel, and the channel defines a straight longitudinal axis between the first end and the second open end.

Abstract: This invention relates to a method for the manufacture of monolithic ingot of silicon carbide comprising: i) introducing a mixture comprising polysilicon metal chips and carbon powder into a cylindrical reaction cell having a lid; ii) sealing the cylindrical reaction cell of i); iii) introducing the cylindrical reaction cell of ii) into a vacuum furnace; iv) evacuating the furnace of iii); v) filling the furnace of iv) with a gas mixture which is substantially inert gas to near atmospheric pressure; vi) heating the cylindrical reaction cell in the furnace of v) to a temperature of from 1600 to 2500° C.; vii) reducing the pressure in the cylindrical reaction cell of vi) to less than 50 torr but not less than 0.05 torr; and viii) allowing for substantial sublimation and condensation of the vapors on the inside of the lid of the cylindrical reaction cell of vii).