Patents by Inventor Victorina Poenariu

Victorina Poenariu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE WITH METAL SILICIDE LAYER
    Publication number: 20230317666
    Abstract: A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a method of manufacturing a semiconductor device is provided. A first layer is formed over a silicon carbide (SiC) layer. The first layer has a first surface distal the SiC layer and a second surface proximal the SiC layer. The first layer includes a metal. First thermal energy may be directed to the first surface of the first layer to form a metal silicide layer from the metal of the first layer and silicon of the SiC layer. The metal silicide layer has a first surface distal the SiC layer and a second surface proximal the SiC layer.
    Type: Application
    Filed: April 4, 2022
    Publication date: October 5, 2023
    Inventors: Gregor Langer, Michael Roesner, Ewald Wiltsche, Ronny Kern, Victorina Poenariu, Axel Koenig
  • Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions
    Patent number: 10217636
    Abstract: A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench. By irradiation with a particle beam a first portion of the semiconductor layer exposed by the mask opening and a second portion outside of the vertical projection of the mask opening and directly adjoining to the first portion are amorphized. A vertical extension of the amorphized second portion gradually decreases with increasing distance to the first portion. The amorphized first and second portions are removed.
    Type: Grant
    Filed: March 13, 2018
    Date of Patent: February 26, 2019
    Assignee: Infineon Technologies AG
    Inventors: Thomas Aichinger, Victorina Poenariu, Wolfgang Bergner, Romain Esteve, Daniel Kueck, Dethard Peters, Gerald Reinwald, Roland Rupp, Gerald Unegg
  • Method of Manufacturing a Silicon Carbide Semiconductor Device by Removing Amorphized Portions
    Publication number: 20180204725
    Abstract: A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench. By irradiation with a particle beam a first portion of the semiconductor layer exposed by the mask opening and a second portion outside of the vertical projection of the mask opening and directly adjoining to the first portion are amorphized. A vertical extension of the amorphized second portion gradually decreases with increasing distance to the first portion. The amorphized first and second portions are removed.
    Type: Application
    Filed: March 13, 2018
    Publication date: July 19, 2018
    Inventors: Thomas Aichinger, Victorina Poenariu, Wolfgang Bergner, Romain Esteve, Daniel Kueck, Dethard Peters, Gerald Reinwald, Roland Rupp, Gerald Unegg
  • Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions
    Patent number: 9934972
    Abstract: A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench. By irradiation with a particle beam a first portion of the semiconductor layer exposed by the mask opening and a second portion outside of the vertical projection of the mask opening and directly adjoining to the first portion are amorphized. A vertical extension of the amorphized second portion gradually decreases with increasing distance to the first portion. The amorphized first and second portions are removed.
    Type: Grant
    Filed: October 7, 2016
    Date of Patent: April 3, 2018
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Thomas Aichinger, Wolfgang Bergner, Romain Esteve, Daniel Kueck, Dethard Peters, Victorina Poenariu, Gerald Reinwald, Roland Rupp, Gerald Unegg
  • Method of Manufacturing a Silicon Carbide Semiconductor Device by Removing Amorphized Portions
    Publication number: 20170103894
    Abstract: A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench. By irradiation with a particle beam a first portion of the semiconductor layer exposed by the mask opening and a second portion outside of the vertical projection of the mask opening and directly adjoining to the first portion are amorphized. A vertical extension of the amorphized second portion gradually decreases with increasing distance to the first portion. The amorphized first and second portions are removed.
    Type: Application
    Filed: October 7, 2016
    Publication date: April 13, 2017
    Inventors: Thomas Aichinger, Wolfgang Bergner, Romain Esteve, Daniel Kueck, Dethard Peters, Victorina Poenariu, Gerald Reinwald, Roland Rupp, Gerald Unegg