Abstract: One or more new metrics are introduced into the treatment planning process. More specifically, a correcting factor/metric referred to herein as the critical/repair ratio index is introduced, and/or a correcting factor/metric referred to herein as the spatial periodicity of critical isodose value is introduced. By using these metrics, the expected sparing from the spatial distribution of dose is better accounted for in treatment modalities including spatially fractionated radiation therapy (SFRT) in general and SFRT with ultra-high dose rates in particular. According to a treatment planning strategy, the target can be covered by a Spread-Out Bragg Peak, to optimize and/or homogenize the dose distribution at the target level but still benefit from the sparing effect of SFRT at the healthy tissue level. Delivery techniques include a dynamic focusing technique and a magnetic beam steering technique. Enhancing dose rate enables maximizing the peak-to-valley dose distribution with SFRT despite patient motion.

Abstract: The dose rate of voxels within a particle beam (e.g., proton beam) treatment field delivered using pencil beam scanning (PBS) is calculated, and a representative dose rate for the particle beam treatment field is reported. The calculations account for a dose accumulation in a local region or a sub-volume (e.g., a voxel) as a function of time.

Abstract: The dose rate of voxels within a particle beam (e.g., proton beam) treatment field delivered using pencil beam scanning (PBS) is calculated, and a representative dose rate for the PBS treatment field is reported. The calculations account for dose accumulation in a local region or sub-volume (e.g., a voxel) as a function of time.

Abstract: An electron beam apparatus is capable of registering an image on a substrate. The apparatus comprises a vacuum chamber having a wall. Electron beam source, modulator, and detector components are adapted to generate, modulate and detect an array of electron beams in the vacuum chamber. A circuit board passing through the wall of the vacuum chamber has a plurality of electrical traces to connect to the electron beam source, modulator, and detector components.

Abstract: A method and system for electron beam lithography at high throughput with shorter electron beam column length, reduced electron-electron interactions, and higher beam current. The system includes a photocathode having a pattern composed of a periodic array of apertures with a specific geometry. The spacing of the apertures is chosen so as to maximize the transmission of the laser beam through apertures significantly smaller than the photon wavelength. The patterned photocathode is illuminated by an array of laser beams to allow blanking and gray-beam modulation of the individual beams at the source level by the switching of the individual laser beams in the array. Potential applications for this invention include electron beam direct write on wafers and mask patterning.

Abstract: An electron beam apparatus is capable of registering an image on a substrate. The apparatus comprises a vacuum chamber having a wall. Electron beam source, modulator, and detector components are adapted to generate, modulate and detect an array of electron beams in the vacuum chamber. A circuit board passing through the wall of the vacuum chamber has a plurality of electrical traces to connect to the electron beam source, modulator, and detector components.