Abstract: Memory stacks having substantially vertical bitlines, and chip packages having the same, are disclosed herein. In one example, a memory stack is provided that includes a first memory IC die and a second memory IC die. The second memory IC die is stacked on the first memory IC die. Bitlines are routed through the first and second IC dies in a substantially vertical orientation. Wordlines within the first memory IC die are oriented orthogonal to the bitlines.

Abstract: A data processing system includes a data processor and a memory controller receiving memory access requests from the data processor and generating at least one memory access cycle to a memory system in response to the receiving. The memory controller includes a command queue and a sparse element processor. The command queue is for receiving and storing the memory access requests including a first memory access request including a small element request. The sparse element processor is for causing the memory controller to issue a second memory access request to the memory system in response to the first memory access request with a density greater than a density indicated by the first memory access request.

Abstract: Allocating memory for processing-in-memory (PIM) devices, including: allocating, in a first Dynamic Random Access Memory (DRAM) sub-array, a first data structure beginning in a first grain of the DRAM; allocating, in a second DRAM sub-array, a second data structure beginning in a second grain of the DRAM; and wherein the second DRAM sub-array is different from the first DRAM sub-array and the second grain is different from the first grain.

Abstract: An encryption circuit includes an iterative block cipher circuit. The iterative block cipher circuit has a counter input for a row index, a key input for receiving a secret key, and an output for providing an encrypted counter value in response to performing a block cipher process using the row index as a counter the secret key. The encryption circuit uses the iterative block cipher circuit during a row operation to a memory.

Abstract: A fine-grained dynamic random-access memory (DRAM) includes a first memory bank, a second memory bank, and a dual mode I/O circuit. The first memory bank includes a memory array divided into a plurality of grains, each grain including a row buffer and input/output (I/O) circuitry. The dual-mode I/O circuit is coupled to the I/O circuitry of each grain in the first memory bank, and operates in a first mode in which commands having a first data width are routed to and fulfilled individually at each grain, and a second mode in which commands having a second data width different from the first data width are fulfilled by at least two of the grains in parallel.

Abstract: Systems, methods, devices, and computer-implemented instructions for processor power management implemented in a compiler. In some implementations, a characteristic of code is determined. An instruction based on the determined characteristic is inserted into the code. The code and inserted instruction are compiled to generate compiled code. The compiled code is output.

Abstract: A fine-grained dynamic random-access memory (DRAM) includes a first memory bank, a second memory bank, and a dual mode I/O circuit. The first memory bank includes a memory array divided into a plurality of grains, each grain including a row buffer and input/output (I/O) circuitry. The dual-mode I/O circuit is coupled to the I/O circuitry of each grain in the first memory bank, and operates in a first mode in which commands having a first data width are routed to and fulfilled individually at each grain, and a second mode in which commands having a second data width different from the first data width are fulfilled by at least two of the grains in parallel.

Abstract: Systems, methods, devices, and computer-implemented instructions for processor power management implemented in a compiler. In some implementations, a characteristic of code is determined. An instruction based on the determined characteristic is inserted into the code. The code and inserted instruction are compiled to generate compiled code. The compiled code is output.

Abstract: A fine-grained dynamic random-access memory (DRAM) includes a first memory bank, a second memory bank, and a dual mode I/O circuit. The first memory bank includes a memory array divided into a plurality of grains, each grain including a row buffer and input/output (I/O) circuitry. The dual-mode I/O circuit is coupled to the I/O circuitry of each grain in the first memory bank, and operates in a first mode in which commands having a first data width are routed to and fulfilled individually at each grain, and a second mode in which commands having a second data width different from the first data width are fulfilled by at least two of the grains in parallel.

Abstract: A method includes, in response to receiving a command from a processing device, reading original data from a set of one or more memory devices based on an address range specified in the command, and transmitting a subset of the original data to the processing device, where the subset includes fewer zero values than the original data.

Abstract: Systems, methods, devices, and computer-implemented instructions for processor power management implemented in a compiler. In some implementations, a characteristic of code is determined. An instruction based on the determined characteristic is inserted into the code. The code and inserted instruction are compiled to generate compiled code. The compiled code is output.