Abstract: A communication interface, coupling a controller device to one or more memory devices, provides a high-voltage reset interface. The high-voltage reset interface provides a high-voltage signal to reset the one or more memory devices. The high-voltage reset interface is implemented using a single interconnect line. The reset voltage signal is greater than a maximum voltage representing a high logic value. The communication interface may also include a bi-directional data and address interface that is used to send address, data, and commands between the controller device and the one or more memory devices. A method of transferring information between the controller device and the one or more non-volatile memory devices includes resetting the one or more non-volatile memory devices by asserting a high-voltage signal on the high-voltage reset interface and sending a command from the controller device to the one or more non-volatile memory devices via the data and address interface.

Abstract: A nonvolatile memory apparatus includes a separate controller circuit and memory circuit. The controller circuit is fabricated on a first integrated circuit chip. The controller circuit includes a plurality of charge pump circuits, a system interface logic circuit, a memory control logic circuit, and one or more analog circuits. The memory circuit is fabricated on a second integrated circuit chip and includes a column decoder, a row decoder, a control register, and a data register. A memory-controller interface area includes a first plurality of die bond pads on the first integrated circuit chip and a second plurality of die bond pads on the second integrated circuit chip such that the first and second integrated circuit chips may be die-bonded together. A single controller circuit may interface with a plurality of memory circuits, thus further reducing overall costs as each memory circuit does not require a dedicated controller circuit.

Abstract: A memory circuit and a method of operating a flash or EEPROM device that has two levels of internal cache. A memory device having a memory array, sense amplifiers, a data register, cache, an input-output circuit, and a control logic circuit is configured to output data while simultaneously reading data from the memory array to the data register or simultaneously copying data from the data register to a first level of internal cache. In addition, the memory device is configured to output data while simultaneously writing data from the data register to the memory array.