Abstract: A regenerating system, for the removal of water and potentially harmful organic constituents from a hydration fluid used to dehydrate natural gas. The system includes a device to assure positive flow of the water and organic constituent vapor out of the regenerator, to, in turn, control back pressure associated with the regenerator during the distillation process.

Abstract: A regenerating system, for the removal of water and potentially harmful organic constituents from a dehydration fluid used to dehydrate natural gas. The system includes a device to assure positive flow of the water and organic constituent vapor out of the regenerator, to, in turn, control back pressure associated with the regenerator during the distillation process.

Abstract: Thyristors of one conductivity type formed as an array in a first semiconductor body are respectively connected in parallel with thyristors of the opposite conductivity type formed as an array in a second semiconductor body to produce an array of triacs. In each body the thyristors are separate except for a common anode or cathode region and terminal connection, and are formed in an epitaxial layer divided by PN junction isolation regions on a substrate of opposite conductivity type. The thyristors may be constructed to be triggered by gating signals of either polarity.

Abstract: A voltage overstress protection device consists of a four-layer diode having a buried region of higher impurity concentration adjacent the central junction of the device. The buried region is divided into a plurality of small regions to ensure an even distribution of energy dissipation across the structure. The cathode of the device may be perforated by shorting dots of the material of the second layer to determine the holding current of the device, and where this is done the small buried regions are aligned with parts of the cathode and not with the shorting dots. Two devices may be formed in opposite senses in the same body of semiconductor material and connected together in antiparallel to provide protection against voltage surges of either polarity. Two antiparallel pairs of devices may be formed in a single semiconductor body to provide protection against separate voltage surges on two lines and also against different voltage surges between the two lines.

Abstract: An overvoltage protector consists of a 4-layer diode having a buried region located adjacent to the central junction of the diode and of greater impurity concentration than the layer of the same conductivity type adjacent to it, so that the current through the diode preferentially flows through the buried region. The buried region is of smaller area than the emitter junction, so that avalanche multiplication in the buried region determines the breakover current of the diode. The holding current of the diode is set by parts of the second layer which perforate the first layer (emitter) thereby forming a resistive path in parallel with the emitter junction. A device for protecting against voltages of different polarities is decribed comprising two such diodes formed in parallel and connected in opposite senses with a common third layer.