Abstract: A magnetic recording disk has surface features of elevated lands and recessed grooves, and a planarized upper surface. A chemical-mechanical-polishing (CMP) stop layer is deposited over the lands and into the recesses. An adhesion film, like silicon, is deposited over the CMP stop layer, and fill material containing a silicon oxide (SiOx) is deposited over and in contact with the adhesion film. The adhesion film improves the adhesion of the SiOx fill material and prevents delamination during a subsequent two-step CMP planarizing process.

Abstract: A light emitting diode having a metallized silicon substrate including a silicon base, a buffer layer disposed on the silicon base, a metal layer disposed on the buffer layer, and light emitting layers disposed on the metal layer. The buffer layer can be AlN, and the metal layer ZrN. The light emitting layers can include GaN and InGaN. The metallized silicon substrate can also include an oxidation prevention layer disposed on the metal layer. The oxidation prevention layer can be AlN. The light emitting diode can be formed using an organometallic vapor phase epitaxy process. The intermediate ZrN/AlN layers enable epitaxial growth of GaN on silicon substrates using conventional organometallic vapor phase epitaxy. The ZrN layer provides an integral back reflector, ohmic contact to n-GaN. The AlN layer provides a reaction barrier, thermally conductive interface layer, and electrical isolation layer.