Patents by Inventor Vijendra Sahi
Vijendra Sahi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080200028Abstract: Methods of positioning and orienting nanostructures, and particularly nanowires, on surfaces for subsequent use or integration. The methods utilize mask based processes alone or in combination with flow based alignment of the nanostructures to provide oriented and positioned nanostructures on surfaces. Also provided are populations of positioned and/or oriented nanostructures, devices that include populations of positioned and/or oriented nanostructures, systems for positioning and/or orienting nanostructures, and related devices, systems and methods.Type: ApplicationFiled: November 21, 2006Publication date: August 21, 2008Applicant: Nanosys, Inc.Inventors: Xiangfeng Duan, Hugh Daniels, Chunming Niu, Vijendra Sahi, James Hamilton, Linda T. Romano
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Patent number: 7339184Abstract: The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.Type: GrantFiled: April 29, 2005Date of Patent: March 4, 2008Assignee: Nanosys, IncInventors: Linda T. Romano, Jian Chen, Xiangfeng Duan, Robert S. Dubrow, Stephen A. Empedocles, Jay L. Goldman, James M. Hamilton, David L. Heald, Francesco Lemmi, Chunming Niu, Yaoling Pan, George Pontis, Vijendra Sahi, Erik C. Scher, David P. Stumbo, Jeffery A. Whiteford
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Publication number: 20080041814Abstract: The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.Type: ApplicationFiled: August 16, 2007Publication date: February 21, 2008Applicant: NANOSYS, INC.Inventors: Linda Romano, Jian Chen, Xiangfeng Duan, Robert Dubrow, Stephen Empedocles, Jay Goldman, James Hamilton, David Heald, Francesco Lemmi, Chunming Niu, Yaoling Pan, George Pontis, Vijendra Sahi, Erik Scher, David Stumbo, Jeffery Whiteford
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Publication number: 20080038520Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.Type: ApplicationFiled: December 20, 2006Publication date: February 14, 2008Applicant: NANOSYS, Inc.Inventors: Yaoling Pan, Xiangfeng Duan, Robert Dubrow, Jay Goldman, Shahriar Mostarshed, Chunming Niu, Linda Romano, David Stumbo, Alice Fischer-Colbrie, Vijendra Sahi, Virginia Robbins
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Publication number: 20070282247Abstract: This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrates and medical devices. In one particular embodiment, a method of administering a composition to a patient is disclosed which comprises providing a composition-eluting device, said composition-eluting device comprising at least a first surface and a plurality of nanostructures attached to the first surface, and introducing the composition-eluting device into the body of the patient.Type: ApplicationFiled: February 22, 2007Publication date: December 6, 2007Applicant: Nanosys, Inc.Inventors: Tejal Desai, R. Daniels, Vijendra Sahi
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Publication number: 20070264634Abstract: Methods of detecting a component of interest, a change in charge, a pH, a cellular response using nanosensors are provided. Nanosensors, including nanowires and nanowire arrays comprising functionalized and/or non-functionalized nanowires are provided. Nanosensors are, used for detection in cellular fragmentation, multiple concentration analysis, glucose detection, and intracellular analysis.Type: ApplicationFiled: October 9, 2003Publication date: November 15, 2007Inventors: Larry Bock, R. Daniels, Stephen Empedocles, Chumming Niu, John Owicki, Vijendra Sahi, Calvin Chow, George Pontis
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Publication number: 20070228439Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.Type: ApplicationFiled: June 8, 2007Publication date: October 4, 2007Applicant: NANOSYS, INC.Inventors: Xiangfeng Duan, Chunming Niu, Stephen Empedocles, Linda Romano, Jian Chen, Vijendra Sahi, Lawrence Bock, David Stumbo, J. Parce, Jay Goldman
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Patent number: 7233041Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.Type: GrantFiled: July 21, 2006Date of Patent: June 19, 2007Assignee: Nanosys, Inc.Inventors: Xiangfeng Duan, Chunming Niu, Stephen A. Empedocles, Linda T. Romano, Jian Chen, Vijendra Sahi, Lawrence A. Bock, David P. Stumbo, Parce J. Wallace, Jay L. Goldman
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Publication number: 20070120167Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.Type: ApplicationFiled: November 21, 2006Publication date: May 31, 2007Applicant: Nanosys, Inc.Inventors: Xiangfeng Duan, Chunming Niu, Stephen Empedocles, Linda Romano, Jian Chen, Vijendra Sahi, Lawrence Bock, David Stumbo, J. Parce, Jay Goldman
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Publication number: 20070012980Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.Type: ApplicationFiled: July 21, 2006Publication date: January 18, 2007Applicant: Nanosys, Inc.Inventors: Xiangfeng Duan, Chunming Niu, Stephen Empedocles, Linda Romano, Jian Chen, Vijendra Sahi, Lawrence Bock, David Stumbo, J. Parce, Jay Goldman
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Patent number: 7164209Abstract: Methods of positioning and orienting nanostructures, and particularly nanowires, on surfaces for subsequent use or integration. The methods utilize mask based processes alone or in combination with flow based alignment of the nanostructures to provide oriented and positioned nanostructures on surfaces. Also provided are populations of positioned and/or oriented nanostructures, devices that include populations of positioned and/or oriented nanostructures, systems for positioning and/or orienting nanostructures, and related devices, systems and methods.Type: GrantFiled: December 1, 2004Date of Patent: January 16, 2007Assignee: Nanosys, Inc.Inventors: Xiangfeng Duan, R. Hugh Daniels, Chunming Niu, Vijendra Sahi, James M. Hamilton, Linda T. Romano
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Patent number: 7151209Abstract: Nanostructure manufacturing methods and methods for assembling nanostructures into functional elements such as junctions, arrays and devices are provided. Systems for practicing the methods are also provided.Type: GrantFiled: May 31, 2005Date of Patent: December 19, 2006Assignee: Nanosys, Inc.Inventors: Stephen Empedocles, Larry Bock, Calvin Y. H. Chow, Xianfeng Duan, Chunming Niu, George Pontis, Vijendra Sahi, Linda T. Romano, David Stumbo
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Patent number: 7135728Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.Type: GrantFiled: April 13, 2005Date of Patent: November 14, 2006Assignee: Nanosys, Inc.Inventors: Xiangfeng Duan, Chunming Niu, Stephen A. Empedocles, Linda T. Romano, Jian Chen, Vijendra Sahi, Lawrence A. Bock, David P. Stumbo, Parce J. Wallace, Jay L. Goldman
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Publication number: 20060211183Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.Type: ApplicationFiled: April 18, 2006Publication date: September 21, 2006Applicant: Nanosys, Inc.Inventors: Xiangfeng Duan, Chunming Niu, Stephen Empedocles, Linda Romano, Jian Chen, Vijendra Sahi, Lawrence Bock, David Stumbo, J. Parce, Jay Goldman
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Publication number: 20060204738Abstract: This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrates and medical devices. In one particular embodiment, methods for enhancing cellular functions on a surface of a medical device implant are disclosed which generally comprise providing a medical device implant comprising a plurality of nanofibers (e.g., nanowires) thereon and exposing the medical device implant to cells such as osteoblasts.Type: ApplicationFiled: January 12, 2006Publication date: September 14, 2006Applicant: Nanosys, Inc.Inventors: Robert Dubrow, Lawrence Bock, R. Daniels, Veeral Hardev, Chunming Niu, Vijendra Sahi
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Publication number: 20060159916Abstract: This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates, as well as methods and uses for such substrates.Type: ApplicationFiled: May 5, 2004Publication date: July 20, 2006Applicant: NANOSYS, Inc.Inventors: Robert Dubrow, Robert Daniels, J. Parce, Matthew Murphy, Jim Hamilton, Erik Scher, Dave Stumbo, Chunming Niu, Linda Romano, Jay Goldman, Vijendra Sahi, Jeffery Whiteford
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Publication number: 20060151820Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.Type: ApplicationFiled: January 30, 2006Publication date: July 13, 2006Applicant: Nanosys, Inc.Inventors: Xiangfeng Duan, Chunming Niu, Stephen Empedocles, Linda Romano, Jian Chen, Vijendra Sahi, Lawrence Bock, David Stumbo, J. Parce, Jay Goldman
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Patent number: 7067867Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.Type: GrantFiled: September 30, 2003Date of Patent: June 27, 2006Assignee: Nanosys, Inc.Inventors: Xiangfeng Duan, Chunming Niu, Stephen Empedocles, Linda T. Romano, Jian Chen, Vijendra Sahi, Lawrence Bock, David Stumbo, J. Wallace Parce, Jay L. Goldman
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Patent number: 7064372Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.Type: GrantFiled: December 3, 2004Date of Patent: June 20, 2006Assignee: Nanosys, Inc.Inventors: Xiangfeng Duan, Chunming Niu, Stephen Empedocles, Linda T. Romano, Jian Chen, Vijendra Sahi, Lawrence A. Bock, David P. Stumbo, J. Wallace Parce, Jay L. Goldman
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Publication number: 20060008942Abstract: The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.Type: ApplicationFiled: April 29, 2005Publication date: January 12, 2006Applicant: Nanosys, Inc.Inventors: Linda Romano, Jian Chen, Xiangfeng Duan, Robert Dubrow, Stephen Empedocles, Jay Goldman, James Hamilton, David Heald, Francesco Lemmi, Chunming Niu, Yaoling Pan, George Pontis, Vijendra Sahi, Erik Scher, David Stumbo, Jeffery Whiteford