Patents by Inventor Vikas Sachan
Vikas Sachan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10146036Abstract: In the methods and systems, optical images of inspection care areas on a semiconductor wafer are acquired and analyzed to detect defects. However, during this analysis, the same threshold setting is not used for all inspection care areas. Instead, care areas are grouped into different care area groups, based on different design layouts and properties. Each group is associated with a corresponding threshold setting that is optimal for detecting defects in the inspection care areas belonging to that group. The assignment of the care areas to the different groups and the association of the different threshold settings with the different groups are noted in an index. This index is accessible during the analysis and used to ensure that each of the inspection care areas in a specific care area group is analyzed based on a corresponding threshold setting that is optimal for that specific care area group.Type: GrantFiled: June 7, 2016Date of Patent: December 4, 2018Assignee: GLOBALFOUNDRIES INC.Inventors: Parul Dhagat, Ananthan Raghunathan, Vikas Sachan, Dmitry A. Vengertsev
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Publication number: 20170352145Abstract: In the methods and systems, optical images of inspection care areas on a semiconductor wafer are acquired and analyzed to detect defects. However, during this analysis, the same threshold setting is not used for all inspection care areas. Instead, care areas are grouped into different care area groups, based on different design layouts and properties. Each group is associated with a corresponding threshold setting that is optimal for detecting defects in the inspection care areas belonging to that group. The assignment of the care areas to the different groups and the association of the different threshold settings with the different groups are noted in an index. This index is accessible during the analysis and used to ensure that each of the inspection care areas in a specific care area group is analyzed based on a corresponding threshold setting that is optimal for that specific care area group.Type: ApplicationFiled: June 7, 2016Publication date: December 7, 2017Applicant: GLOBALFOUNDRIES INC.Inventors: Parul Dhagat, Ananthan Raghunathan, Vikas Sachan, Dmitry A. Vengertsev
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Patent number: 7270762Abstract: The polishing composition of this invention is useful for chemical-mechanical polishing of substrates containing noble metals such as platinum and comprises up to about 50% by weight of a adjuvant wherein said adjuvant is s elected from a group consisting of a metal-anion compound, a metal-cation compound or mixtures thereof; abrasive particles at about 0.5% to about 55% by weight of the polishing composition; and water-soluble organic additives up to about 10% by weight of the polishing composition. The abrasive particles are selected from the group consisting of alumina, ceria, silica, diamond, germania, zirconia, silicon carbide, boron nitride, boron carbide or mixtures thereof. The organic additives generally improve dispersion of the abrasive particles and also enhance metal removal rates and selectivity for metal removal by stabilizing the pH of the polishing composition and suppressing the dielectric removal rate.Type: GrantFiled: March 20, 2003Date of Patent: September 18, 2007Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Hongyu Wang, Terence M. Thomas, Qianqiu Ye, Heinz F. Reinhardt, Vikas Sachan
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Patent number: 6699299Abstract: A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.Type: GrantFiled: March 20, 2003Date of Patent: March 2, 2004Assignee: Rodel Holdings, Inc.Inventors: Vikas Sachan, Elizabeth A. (Kegerise) Langlois, Qianqiu (Christine) Ye, Keith G. Pierce, Craig D. Lack, Terence M. Thomas, Peter A. Burke, David Gettman, Sarah Lane
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Patent number: 6693035Abstract: A method for chemical mechanical planarization of a semiconductor structure comprised of a conductive metal interconnect layer, a barrier or liner film, and an underlying dielectric layer using a two-step polishing process is provided. In the first step, the conducting metal overburden is substantially removed with little removal of the barrier or liner layer or the underlying dielectric structure. In the second step, the barrier layer is removed with little removal of the underlying dielectric layer. Five different methods and associated slurry compositions are described for the second polishing step, each adjusted to the state of the wafer following the first step of polishing. By using the appropriate method, the integrity of the remaining semiconductor structure can be substantially retained.Type: GrantFiled: October 19, 1999Date of Patent: February 17, 2004Assignee: Rodel Holdings, Inc.Inventors: Vikas Sachan, Peter A. Burke, Elizabeth A. (Kegerise) Langlois, Keith G. Pierce
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Publication number: 20030181046Abstract: A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.Type: ApplicationFiled: March 20, 2003Publication date: September 25, 2003Inventors: Vikas Sachan, Elizabeth A. (Kegerise) Langlois, Qianqiu (Christine) Ye, Keith G. Pierce, Craig D. Lack, Terence M. Thomas, Peter A. Burke, David Gettman, Sarah Lane
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Publication number: 20030176072Abstract: The polishing composition of this invention is useful for chemical-mechanical polishing of substrates containing noble metals such as platinum and comprises up to about 50% by weight of a adjuvant wherein said adjuvant is s elected from a group consisting of a metal-anion compound, a metal-cation compound or mixtures thereof; abrasive particles at about 0.5% to about 55% by weight of the polishing composition; and water-soluble organic additives up to about 10% by weight of the polishing composition. The abrasive particles are selected from the group consisting of alumina, ceria, silica, diamond, germania, zirconia, silicon carbide, boron nitride, boron carbide or mixtures thereof. The organic additives generally improve dispersion of the abrasive particles and also enhance metal removal rates and selectivity for metal removal by stabilizing the pH of the polishing composition and suppressing the dielectric removal rate.Type: ApplicationFiled: March 20, 2003Publication date: September 18, 2003Inventors: Hongyu Wang, Terence M. Thomas, Qianqiu Ye, Heinz F. Reinhardt, Vikas Sachan
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Patent number: 6616717Abstract: A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.Type: GrantFiled: May 16, 2001Date of Patent: September 9, 2003Assignee: Rodel Holdings, Inc.Inventors: Vikas Sachan, Elizabeth A. (Kegerise) Langlois, Qianqiu (Christine) Ye, Keith G. Pierce, Craig D. Lack, Terence M. Thomas, Peter A. Burke, David Gettman, Sarah Lane
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Patent number: 6602112Abstract: A method for polishing a surface of metal on a semiconductor substrate by using a polishing pad and hydrogen peroxide, and removing particles of metal from the semiconductor substrate by polishing, and dissolving the particles in the quantity of hydrogen peroxide.Type: GrantFiled: January 18, 2001Date of Patent: August 5, 2003Assignee: Rodel Holdings, Inc.Inventors: Tony Quan Tran, Vikas Sachan, David Gettman, Terence M. Thomas, Craig D. Lack, Peter A. Burke
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Publication number: 20030139069Abstract: Disclosed is a chemical mechanical planarizing method useful for removing silicon carbide hardmask capping materials in the presence of Low-k dielectrics contained on semiconductor wafers. The method uses zirconia-containing slurries at acidic pH levels with the abrasive having a positive zeta potential to facilitate silicon carbide removal.Type: ApplicationFiled: November 27, 2002Publication date: July 24, 2003Inventors: Kelly H. Block, Vikas Sachan
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Publication number: 20030006396Abstract: A polishing composition for CMP to remove a noble metal has a substance forming ligands with the noble metal for dissolution in the polishing composition, abrasive particles, and a surfactant comprising a dispersant of the abrasive particles to minimize formation of agglomerates of the abrasive particles, the abrasive particles being coated by the surfactant to provide surfactant coated abrasive particles that minimize scratching of a surface being abraded by the surfactant coated abrasive particles during CMP.Type: ApplicationFiled: May 31, 2002Publication date: January 9, 2003Inventors: Hongyu Wang, Terence M. Thomas, Qianqiu Ye, Heinz F. Reinhardt, Vikas Sachan
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Patent number: 6447373Abstract: A slurry for use in chemical-mechanical polishing of a metal layer comprising particles dispersed in an aqueous medium. The slurry particles will tend to agglomerate when the slurry is at rest and will de-agglomerate with simple stirring. Such metastable slurry systems have been found to be particularly advantageous for metal polishing, particularly the polishing of metal layers during the manufacture of semiconductor devices.Type: GrantFiled: June 21, 2000Date of Patent: September 10, 2002Assignee: Rodel Holdings Inc.Inventors: Craig D. Lack, Qiuliang Luo, Qianqiu (Christine) Ye, Vikas Sachan, Terence M. Thomas, Peter A. Burke
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Publication number: 20020111027Abstract: The polishing composition of this invention is useful for chemical mechanical polishing of substrates containing noble metals such as platinum and contains sulfur-containing compounds at about 0.1% to 50% by weight of the polishing composition, abrasive particles at about 0.5% to about 55% by weight of the polishing composition and water-soluble organic additives up to about 10% by weight of the polishing composition. The abrasive particles are selected from the group consisting of alumina, ceria, silica, diamond, germania, zirconia, silicon carbide, boron nitride, boron carbide or mixtures thereof. The organic additives improve dispersion of the abrasive particles and also enhance metal removal rates and selectivity for metal removal by stabilizing the pH of the polishing composition and suppressing the dielectric removal rate.Type: ApplicationFiled: December 11, 2000Publication date: August 15, 2002Inventors: Vikas Sachan, Heinz F. Reinhardt, Terence M. Thomas
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Publication number: 20020039839Abstract: The polishing composition of this invention is useful for chemical-mechanical polishing of substrates containing noble metals such as platinum and comprises up to about 50% by weight of a adjuvant wherein said adjuvant is selected from a group consisting of a metal-anion compound, a metal-cation compound or mixtures thereof; abrasive particles at about 0.5% to about 55% by weight of the polishing composition; and water-soluble organic additives up to about 10% by weight of the polishing composition. The abrasive particles are selected from the group consisting of alumina, ceria, silica, diamond, germania, zirconia, silicon carbide, boron nitride, boron carbide or mixtures thereof. The organic additives generally improve dispersion of the abrasive particles and also enhance metal removal rates and selectivity for metal removal by stabilizing the pH of the polishing composition and suppressing the dielectric removal rate.Type: ApplicationFiled: June 18, 2001Publication date: April 4, 2002Inventors: Terence M. Thomas, Hongyu Wang, Qianqiu Ye, Heinz F. Reinhardt, Vikas Sachan
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Publication number: 20020019202Abstract: A two-step method for chemical mechanical polishing of a semiconductor substrate having successive layers, comprised of, a metal layer, an underlying barrier film and an underlying dielectric layer. The first polishing step is performed utilizing a slurry composition selective to the metal in the metal layer, to remove the metal at a high removal rate during polishing, and the second polishing step is performed utilizing a slurry composition selective to the barrier film and least selective to the metal layer and the underlying dielectric layer. In an alternate embodiment, the second polishing step is performed with a slurry equally selective to the barrier layer and the underlying dielectric layer and least selective to the metal of the metal layer, to remove the barrier layer at a high removal rate during polishing, and level a surface of the dielectric layer to the surface of the metal interconnection structure in the underlying dielectric layer.Type: ApplicationFiled: February 28, 2001Publication date: February 14, 2002Inventors: Terence M. Thomas, Qianqiu (Christine) Ye, Joseph K. So, Peter A. Burke, Vikas Sachan, Elizabeth A. Langlois, Keith G. Pierce, Craig D. Lack, David Gettman, Hiroyuki Senoo, Kouchi Yoshida, Yoshikazu Nishida, Vilas N. Koinkar, Raymond Lee Lavoie
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Patent number: 6331134Abstract: A composition is provided in the present invention for polishing a composite composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an abrasive, an oxidant, an organic polymer that attenuates removal of the oxide film having a degree of polymerization of at least 5 and having a plurality of moieties having affinity to surface groups contained on silicon dioxide surfaces. The composition may optionally comprise a complexing agent and/or a dispersant.Type: GrantFiled: June 10, 1999Date of Patent: December 18, 2001Assignee: Rodel Holdings Inc.Inventors: Vikas Sachan, Elizabeth A. (Kegerise) Langlois, Qianqiu (Christine) Ye, Keith G. Pierce, Craig D. Lack, Terence M. Thomas, Peter A. Burke, David Gettman, Sarah Lane
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Publication number: 20010039166Abstract: A method for polishing a surface of metal on a semiconductor substrate by using a polishing pad and hydrogen peroxide, and removing particles of metal from the semiconductor substrate by polishing, and dissolving the particles in the quantity of hydrogen peroxide.Type: ApplicationFiled: January 18, 2001Publication date: November 8, 2001Inventors: Tony Quan Tran, Vikas Sachan, David Gettman, Terence M. Thomas, Craig D. Lack, Peter A. Burke
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Publication number: 20010024933Abstract: A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.Type: ApplicationFiled: May 16, 2001Publication date: September 27, 2001Inventors: Vikas Sachan, Elizabeth A. (Kegerise) Langlois, Qianqiu (Christine) Ye, Keith G. Pierce, Craig D. Lack, Terence M. Thomas, Peter A. Burke, David Gettman, Sarah Lane
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Publication number: 20010013507Abstract: A method for chemical-mechanical polishing of a low dielectric constant inorganic polymer surface such as an organo silicate glass wherein a slurry comprising high purity fine zirconium oxide particles uniformly dispersed in a stable aqueous medium is used.Type: ApplicationFiled: December 21, 2000Publication date: August 16, 2001Inventors: Sharath D. Hosali, Vikas Sachan