Patents by Inventor Vikram Bhosle

Vikram Bhosle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ion implantation based emitter profile engineering via process modifications
    Patent number: 9196489
    Abstract: A method of tailoring the dopant profile of a workpiece by modulating one or more operating parameters is disclosed. In one embodiment, the workpiece may be a solar cell and the desired dopant profile may include a heavily doped surface region and a highly doped region. These two regions can be generated by varying one or more of the parameters of the ion implanter. For example, the extraction voltage may be changed to affect the energy of the implanted ions. The ionization energy can be changed to affect the species of ions being generated from the source gas. In another embodiment, the source gasses that are ionized may be changed to affect the species being generated. After the implant has been performed, thermal processing is performed which minimizes the diffusion of the ions in the workpiece.
    Type: Grant
    Filed: January 25, 2013
    Date of Patent: November 24, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Vikram Bhosle, Bon-Woong Koo
  • ION IMPLANTATION BASED EMITTER PROFILE ENGINEERING VIA PROCESS MODIFICATIONS
    Publication number: 20140213014
    Abstract: A method of tailoring the dopant profile of a workpiece by modulating one or more operating parameters is disclosed. In one embodiment, the workpiece may be a solar cell and the desired dopant profile may include a heavily doped surface region and a highly doped region. These two regions can be generated by varying one or more of the parameters of the ion implanter. For example, the extraction voltage may be changed to affect the energy of the implanted ions. The ionization energy can be changed to affect the species of ions being generated from the source gas. In another embodiment, the source gasses that are ionized may be changed to affect the species being generated. After the implant has been performed, thermal processing is performed which minimizes the diffusion of the ions in the workpiece.
    Type: Application
    Filed: January 25, 2013
    Publication date: July 31, 2014
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Vikram Bhosle, Bon-Woong Koo