Abstract: A high-index-contrast waveguide structure material used to guide light through a low-refractive-index material. In one embodiment, the waveguide structures are capable of guiding and confining light in such a way that very high optical intensity is obtained in a small cross-sectional area or gap filled with any material with sufficiently low refractive index, relative to the remainder of the structure. The structure may be used to form resonators, optical couplers, directional optical couplers and other optical devices. Structures may be formed consistent with integrated circuit forming processes.

Abstract: Fast, all optical switching of light is provided on silicon, using highly light confining structures to enhance the sensitivity of light to small changes in refractive index. In one embodiment, the light confining structures are silicon micrometer-size planar ring resonators which operate with low pump light pulse energies.

Abstract: A substrate incorporates a mechanical cantilever resonator with passive integrated optics for motion detection. The resonator acts as a waveguide, and enables optical detection of deflection/displacement amplitude, including oscillations. In one embodiment, the cantilever comprises a silicon waveguide suspended over a substrate. A reflector structure faces a free end of the suspending cantilever, or a waveguide is supported facing the free end of the suspended cantilever to receive light transmitted through the silicon waveguide cantilever. Deflection/displacement of the cantilever results in modulation of the light received from its free end that is representative of the displacement. Ring resonators may be used to couple different wavelength light to the waveguides, allowing formation of an array of cantilevers.

Abstract: An electro-optic modulator is formed on a silicon-on-insulator (SOI) rib waveguide. An optical field in the modulator is confined by using an electrically modulated microcavity. The microcavity has reflectors on each side. In one embodiment, a planar Fabry-Perot microcavity is used with deep Si/SiO2 Bragg reflectors. Carriers may be laterally confined in the microcavity region by employing deep etched lateral trenches. The refractive index of the microcavity is varied by using the free-carrier dispersion effect produced by a p-i-n diode formed about the microcavity. In one embodiment, the modulator confines both optical field and charge carriers in a micron-size region.