Patents by Inventor Vincent Etienne Houtsma
Vincent Etienne Houtsma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150303650Abstract: A directly modulated multi-electrode DFB laser is used to transmit information in a TWDM environment where the output power and the output wavelength of the laser output signal are determined by the ratios of bias currents simultaneously applied to the electrodes of the laser by a control circuit. The total amount of current applied to the electrodes is kept to a constant value to maintain the temperature of the laser constant. The electrodes of the DFB laser are positioned so as not to experience any thermal coupling between them or with any other component of the DFB laser.Type: ApplicationFiled: April 22, 2014Publication date: October 22, 2015Applicant: ALCATEL-LUCENT USA INC.Inventors: Vincent Etienne Houtsma, Doutje T. van Veen
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Publication number: 20100054761Abstract: An optical receiver has a monolithically integrated electrical and optical circuit that includes a substrate with a planar surface. Along the planar surface, the monolithically integrated electrical and optical circuit has an optical hybrid, one or more variable optical attenuators, and photodetectors. The optical hybrid is connected to receive light beams, to interfere light of said received light beams with a plurality of relative phases and to output said interfered light via optical outputs thereof. Each of the one or more variable optical attenuators connects between a corresponding one of the optical outputs and a corresponding one of the photodetectors.Type: ApplicationFiled: August 28, 2008Publication date: March 4, 2010Inventors: Young-Kai Chen, Christopher Richard Doerr, Vincent Etienne Houtsma, Ting-Chen Hu, Andreas Bertold Leven, David Thomas Neilson, Nils Guenter Weimann, Liming Zhang
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Publication number: 20090324250Abstract: A wireless transmitter includes an optical modulator, an optical power splitter, a plurality of electrical drivers, and a plurality of antennas. The optical power splitter has a plurality of optical outputs and has an optical input connected to receive a modulated optical carrier from the optical modulator. Each driver is configured to detect a portion of the modulated optical carrier output by one of the optical outputs of the optical power splitter. Each antenna is connected to be driven by one of the electrical drivers.Type: ApplicationFiled: December 19, 2008Publication date: December 31, 2009Inventors: Young-Kai Chen, Vincent Etienne Houtsma, Ting-Chen Hu, Nils Guenter Weimann
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Patent number: 7595249Abstract: A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.Type: GrantFiled: September 29, 2008Date of Patent: September 29, 2009Assignee: Alcatel-Lucent USA Inc.Inventors: Young-Kai Chen, Lay-Lay Chua, Vincent Etienne Houtsma, Rose Fasano Kopf, Andreas Leven, Chun-Ting Liu, Wei-Jer Sung, Yang Yang
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Publication number: 20090146179Abstract: An apparatus includes a light detector. The light detector includes a substrate with a planar surface and an array of photodiodes located along the planar surface. Each photodiode has a sequence of different semiconductor layers stacked vertically over the planar surface. The photodiodes are electrically connected in series.Type: ApplicationFiled: December 21, 2007Publication date: June 11, 2009Inventors: Young-Kai Chen, Vincent Etienne Houtsma, Andreas Bertold Leven, Nils Guenter Weimann
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Publication number: 20090029536Abstract: A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.Type: ApplicationFiled: September 29, 2008Publication date: January 29, 2009Inventors: Young-Kai Chen, Lay-Lay Chua, Vincent Etienne Houtsma, Rose Fasano Kopf, Andreas Leven, Chun-Ting Liu, Wei-Jer Sung, Yang Yang
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Patent number: 7471855Abstract: An optical integrated circuit comprises a semiconductor body, a semiconductor optical waveguide located on the body, and a bipolar phototransistor located on and optically coupled to the waveguide. In a preferred embodiment, the base region of the transistor is configured to absorb radiation propagating in the waveguide, but the emitter and collector regions are both configured not to absorb the propagating radiation. In a further preferred embodiment, the waveguide is configured to guide the radiation along a propagation axis therein, and the transistor makes an elongated footprint along the waveguide, the footprint being elongated along the direction of the propagation axis. In another preferred embodiment, the footprint is at least three times longer along the propagation axis than along a direction perpendicular thereto.Type: GrantFiled: July 13, 2005Date of Patent: December 30, 2008Assignee: Alcatel-Lucent USA Inc.Inventors: Young-Kai Chen, Vincent Etienne Houtsma, Andreas Bertold Leven, Nils Guenter Weimann
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Patent number: 7190047Abstract: Apparatus comprising: a first compound semiconductor composition layer doped to have a first charge carrier polarity; a second compound semiconductor composition layer doped to have a second charge carrier polarity and located on the first layer; a third compound semiconductor composition layer doped to have the first charge carrier polarity and located on the second layer; a base electrode on the second layer; and a spacer ring interposed between and defining a charge carrier access path distance between the base electrode and the third layer, the path distance being within a range of between about 200 ? and about 1000 ?. Techniques for making apparatus. Apparatus is useful as a heterobipolar transistor, particularly for high frequency applications.Type: GrantFiled: June 3, 2004Date of Patent: March 13, 2007Assignee: Lucent Technologies Inc.Inventors: Young-Kai Chen, Vincent Etienne Houtsma, Nils Guenter Weimann
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Patent number: 7170147Abstract: Microelectronic apparatus having protection against high frequency crosstalk radiation, comprising: a planar insulating substrate; an active semiconductor electronic device located over a first region of the insulating substrate; and a doped semiconductor located in a second region of the insulating substrate substantially surrounding the first region. Apparatus further comprising a dissipative conductor overlaying and adjacent to the doped semiconductor. Apparatus additionally comprising metallic test probe contacts making electrical connections with the active semiconductor electronic device. Application of the apparatus to dissipate crosstalk radiation having a center frequency within a range between about 1 gigahertz and about 1,000 gigahertz. Methods for making the apparatus.Type: GrantFiled: July 28, 2003Date of Patent: January 30, 2007Assignee: Lucent Technologies Inc.Inventors: Young-Kai Chen, Vincent Etienne Houtsma, Nils Guenter Weimann
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Patent number: 6911716Abstract: A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.Type: GrantFiled: September 13, 2002Date of Patent: June 28, 2005Assignee: Lucent Technologies, Inc.Inventors: Young-Kai Chen, Lay-Lay Chua, Vincent Etienne Houtsma, Rose Fasano Kopf, Andreas Leven, Chun-Ting Liu, Wei-Jer Sung, Yang Yang
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Publication number: 20050023708Abstract: Microelectronic apparatus having protection against high frequency crosstalk radiation, comprising: a planar insulating substrate; an active semiconductor electronic device located over a first region of the insulating substrate; and a doped semiconductor located in a second region of the insulating substrate substantially surrounding the first region. Apparatus further comprising a dissipative conductor overlaying and adjacent to the doped semiconductor. Apparatus additionally comprising metallic test probe contacts making electrical connections with the active semiconductor electronic device. Application of the apparatus to dissipate crosstalk radiation having a center frequency within a range between about 1 gigahertz and about 1,000 gigahertz. Methods for making the apparatus.Type: ApplicationFiled: July 28, 2003Publication date: February 3, 2005Applicant: Lucent Technologies Inc.Inventors: Young-Kai Chen, Vincent Etienne Houtsma, Nils Guenter Weimann
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Publication number: 20040046182Abstract: A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.Type: ApplicationFiled: September 13, 2002Publication date: March 11, 2004Inventors: Young-Kai Chen, Lay-Lay Chua, Vincent Etienne Houtsma, Rose Fasano Kopf, Andreas Leven, Chun-Ting Liu, Wei-Jer Sung, Yang Yang