Abstract: A method for forming a metal-organic framework comprising a step of providing a substrate; a single step of forming a single layer of metal oxide formed on the substrate said layer of metal oxide being transformed in whole or in part into metal-organic framework by successive implementation of a plurality of reaction cycles; each reaction cycle of the plurality of reaction cycles comprising: a treatment step with at least one ligand; a treatment step with at least one additive; the reaction cycles being implemented at least twice so as to form the metal-organic framework on the substrate.

Abstract: A gravimetric detector including a nanoelectronic structure including: a fixed part, at least one part suspended from the fixed part, an excitation device to vibrate the suspended part relative to the fixed part, a detector to detect variations in vibration of the suspended part, and a porous functionalization layer at least partially covering the suspended part, porosity of the functionalization layer being between 3% and 50%.

Abstract: Gas chromatography column comprising a substrate, a channel formed in said substrate, a cover closing said substrate and a stationary phase covering the walls of said channel, wherein said stationary phase is made of SiOxCyHz with x between 1.6 and 1.8, y between 1 and 2.2 and z between 3 and 4, wherein said stationary phase is porous with a porosity of between 10% and 40%.

Abstract: A gravimetric detector including a nanoelectronic structure including: a fixed part, at least one part suspended from the fixed part, an excitation device to vibrate the suspended part relative to the fixed part, a detector to detect variations in vibration of the suspended part, and a porous functionalization layer at least partially covering the suspended part, porosity of the functionalization layer being between 3% and 50%.

Abstract: Gas chromatography column comprising a substrate, a channel formed in said substrate, a cover closing said substrate and a stationary phase covering the walls of said channel, wherein said stationary phase is made of SiOxCyHz with x between 1.6 and 1.8, y between 1 and 2.2 and z between 3 and 4, wherein said stationary phase is porous with a porosity of between 10% and 40%.

Abstract: A humidity sensor of capacitive type, a device for detecting or measuring humidity including the sensor, and a method to fabricate the sensor. The humidity sensor includes at least one nanoporous dielectric material positioned between at least one first electrode of a capacitor and at least one second electrode of the capacitor.

Abstract: The present invention relates to a method for synthesizing metal or metal oxide nanoparticles by liquid-phase deposition on a surface layer of a substrate, comprising the following successive steps:—a step of thermally pretreating the conductor or semiconductor surface layer of a substrate, comprising the application of a specified temperature;—a step of impregnating the pretreated surface layer of the substrate with an organometallic complex in solution in an aprotic solvent;—a step of annealing under controlled atmosphere, and wherein the specified temperature is selected to obtain a predefined size of nanoparticles between 4 and 60 nm with a dispersion less than or equal to 30%. The invention is adapted to applications of nanoparticles in the field of microelectronics, optics or catalysis.

Abstract: A process for preparing a thin layer of a nanoporous dielectric material with homogeneous porosity is provided. The method includes depositing a first thin layer of an oxygen-free material onto a substrate. A second thin layer of a second material is deposited onto the first layer. The first layer and second layer assembly are treated under conditions so that a gas is generated in the first layer by foaming, leading to the creation of nanopores in the first layer. The second thin layer will not form a gas during this treatment and will have a sufficient density to limit or prevent the spread and/or diffusion of the gas generated in the first layer. The second thin layer may be removed.

Abstract: The invention relates to a method for fabricating silicon and/or germanium nanowires on a substrate, comprising a step of bringing a precursor comprising silicon and/or a precursor comprising germanium into contact with a compound comprising copper oxide present on the said substrate, by means of which growth of nanowires takes place.

Abstract: A process for manufacturing a permeable dielectric film, includes the deposition on a substrate of a film constituted of a material comprising silicon, carbon, hydrogen, oxygen and, possibly, nitrogen and/or fluorine, a majority of Si—C bonds and a proportion of Si—O bonds such that the oxygen present in said material represents less than 30 atom %; and the selective destruction with a chemical agent of the Si—O bonds present in the film. Applications include microelectronics and microtechnology, in any manufacturing process that involves the degradation of a sacrificial material by diffusion of a chemical agent through a film that is permeable to this agent, for the production of air gaps, in particular the manufacture of air-gap interconnects for integrated circuits.

Abstract: A process for producing at least one air gap in a microstructure, which includes the supply of a microstructure comprising at least one gap filled with a sacrificial material, this gap being limited over at least part of its surface by an impermeable membrane but which may be rendered permeable by the action of a chemical etchant, this etchant also being capable of degrading the sacrificial material and the contacting of the microstructure with said chemical etchant in order to make the membrane permeable and degrade the sacrificial material, and the removal of the chemical etchant from the microstructure and in which the chemical etchant is a fluid containing hydrofluoric acid and/or ammonium fluoride. Applications include microelectronics and micro-technology.

Abstract: A humidity sensor of capacitive type, a device for detecting or measuring humidity including the sensor, and a method to fabricate the sensor. The humidity sensor includes at least one nanoporous dielectric material positioned between at least one first electrode of a capacitor and at least one second electrode of the capacitor.

Abstract: The invention relates to a method for fabricating silicon and/or germanium nanowires on a substrate, comprising a step of bringing a precursor comprising silicon and/or a precursor comprising germanium into contact with a compound comprising copper oxide present on the said substrate, by means of which growth of nanowires takes place.

Abstract: The invention relates to a process for producing at least one air gap in a microstructure, which comprises: a) the supply of a microstructure comprising at least one gap filled with a sacrificial material, this gap being limited over at least part of its surface by an impermeable membrane but which may be rendered permeable by the action of a chemical etchant, this etchant also being capable of degrading the sacrificial material; b) the contacting of the microstructure with said chemical etchant in order to make the membrane permeable and degrade the sacrificial material; and c) the removal of the chemical etchant from the microstructure; and in which the chemical etchant is a fluid containing hydrofluoric acid and/or ammonium fluoride. Applications: Microelectronics and micro-technology.

Abstract: The invention relates to a process for manufacturing a permeable dielectric film, which comprises: a) the deposition on a substrate of a film constituted of a material comprising silicon, carbon, hydrogen, oxygen and, possibly, nitrogen and/or fluorine, a majority of Si—C bonds and a proportion of Si—O bonds such that the oxygen present in said material represents less than 30 atom %; and then b) the selective destruction with a chemical agent of the Si—O bonds present in the film deposited in step a). Applications: microelectronics and microtechnology, in any manufacturing process that involves the degradation of a sacrificial material by diffusion of a chemical agent through a film that is permeable to this agent, for the production of air gaps, in particular the manufacture of air-gap interconnects for integrated circuits.

Abstract: Process for preparing a thin layer of a nanoporous dielectric material with homogeneous porosity in which the following successive steps are performed: a first thin layer of a first oxygen-free material, including Si, C and optionally one or more other atom(s) chosen from H, N and F is deposited on a substrate, under conditions so that said first thin layer has a composition making it possible to generate a gas in a subsequent foaming treatment; on the first layer, a second thin layer so-called crust of a second material including Si and at least one other atom chosen from O, C, N, F and H is deposited under conditions so that said second thin layer has a composition that does not make it possible to generate a gas in the subsequent foaming step, and a sufficient density to limit or prevent the spread, diffusion, of the gas generated in the first layer during the subsequent foaming treatment; the first layer and second layer assembly is treated under conditions so that a gas is generated in the first layer